/ Technical Information IGBT- FD300R12KS4 B5 IGBT-modules 62mm C-Serien Modul mit schnellem IGBT2 fr hochfrequentes Schalten 62mm C-series module with the fast IGBT2 for high-frequency switching IGBT, - / IGBT, Brake-Chopper Preliminary Data / Maximum Rated Values T = 25C V 1200 V vj CES Collector-emitter voltage T = 60C, T = 150C I 300 A C vj max C nom Continuous DC collector current TC = 25C, Tvj max = 150C IC 370 A t = 1 ms I 600 A P CRM Repetitive peak collector current T = 25C, T = 150 P 1950 W C vj max tot Total power dissipation VGES +/-20 V Gate-emitter peak voltage / Characteristic Values min. typ. max. I = 300 A, V = 15 V T = 25C 3,20 3,75 V C GE vj V CE sat Collector-emitter saturation voltage I = 300 A, V = 15 V T = 125C 3,85 V C GE vj IC = 12,0 mA, VCE = VGE, Tvj = 25C VGEth 4,5 5,5 6,5 V Gate threshold voltage V = -15 V ... +15 V Q 3,20 C GE G Gate charge Tvj = 25C RGint 1,0 Internal gate resistor f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 20,0 nF vj CE GE ies Input capacitance f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 1,40 nF Reverse transfer capacitance - V = 1200 V, V = 0 V, T = 25C I 5,0 mA CE GE vj CES Collector-emitter cut-off current - V = 0 V, V = 20 V, T = 25C I 400 nA CE GE vj GES Gate-emitter leakage current () IC = 300 A, VCE = 600 V Tvj = 25C 0,10 s t d on Turn-on delay time, inductive load V = 15 V T = 125C 0,11 s GE vj RGon = 3,0 () IC = 300 A, VCE = 600 V Tvj = 25C 0,06 s t r Rise time, inductive load V = 15 V T = 125C 0,07 s GE vj RGon = 3,0 () IC = 300 A, VCE = 600 V Tvj = 25C 0,53 s t d off Turn-off delay time, inductive load V = 15 V T = 125C 0,55 s GE vj RGoff = 3,0 () IC = 300 A, VCE = 600 V Tvj = 25C 0,03 s t f Fall time, inductive load V = 15 V T = 125C 0,04 s GE vj RGoff = 3,0 () IC = 300 A, VCE = 600 V, LS = 60 nH Tvj = 25C mJ Turn-on energy loss per pulse V = 15 V T = 125C E 25,0 mJ GE vj on RGon = 3,0 ( IC = 300 A, VCE = 600 V, LS = 60 nH Tvj = 25C mJ Turn-off energy loss per pulse V = 15 V T = 125C E 15,0 mJ GE vj off RGoff = 3,0 VGE 15 V, VCC = 900 V I SC SC data V = V -L di/dt t 10 s, T = 125C 2000 A CEmax CES sCE P vj IGBT / per IGBT R 0,064 K/W thJC Thermal resistance, junction to case IGBT / per IGBT R 0,019 K/W thCH Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease T -40 125 C vj op Temperature under switching conditions prepared by: MK date of publication: 2013-10-03 approved by: WR revision: 2.0 1 / Technical Information IGBT- FD300R12KS4 B5 IGBT-modules Preliminary Data / Diode-serial / Maximum Rated Values T = 25C V 1200 V vj RRM Repetitive peak reverse voltage I 300 A F Continuous DC forward current t = 1 ms I 600 A P FRM Repetitive peak forward current I2t- V = 0 V, t = 10 ms, T = 125C It 18000 As R P vj It - value / Characteristic Values min. typ. max. I = 300 A, V = 0 V T = 25C 2,00 2,55 V F GE vj VF Forward voltage I = 300 A, V = 0 V T = 125C 1,70 V F GE vj I = 300 A, - di /dt = 4500 A/s (T =125C) T = 25C 230 A F F vj vj Peak reverse recovery current V = 600 V T = 125C I 300 A R vj RM I = 300 A, - di /dt = 4500 A/s (T =125C) T = 25C 18,0 C F F vj vj Recovered charge V = 600 V T = 125C Q 42,0 C R vj r I = 300 A, - di /dt = 4500 A/s (T =125C) T = 25C 7,00 mJ F F vj vj Reverse recovery energy V = 600 V T = 125C E 15,0 mJ R vj rec / per diode R 0,10 K/W thJC Thermal resistance, junction to case / per diode RthCH 0,029 K/W Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease T -40 125 C vj op Temperature under switching conditions / Diode, Reverse / Maximum Rated Values T = 25C V 1200 V vj RRM Repetitive peak reverse voltage I 100 A F Continuous DC forward current t = 1 ms I 200 A P FRM Repetitive peak forward current I2t- V = 0 V, t = 10 ms, T = 125C It 4000 As R P vj It - value / Characteristic Values min. typ. max. I = 100 A, V = 0 V T = 25C 2,00 2,55 V F GE vj V F Forward voltage I = 100 A, V = 0 V T = 125C 1,70 V F GE vj / per diode RthJC 0,30 K/W Thermal resistance, junction to case / per diode R 0,087 K/W thCH Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease Tvj op -40 125 C Temperature under switching conditions prepared by: MK date of publication: 2013-10-03 approved by: WR revision: 2.0 2