Technische Information / Technical Information IGBT-Module FD600R06ME3 S2 IGBT-modules EconoDUAL3 Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und NTC EconoDUAL3 module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and NTC Vorlufige Daten / Preliminary Data VCES = 600V I = 600A / I = 1200A C nom CRM Typische Anwendungen Typical Applications Chopper-Anwendungen Chopper Applications Elektrische Eigenschaften Electrical Features Tvj op = 150C Tvj op = 150C Mechanische Eigenschaften Mechanical Features Standardgehuse Standard Housing Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 prepared by: CU date of publication: 2013-10-03 approved by: MK revision: 2.4 UL approved (E83335) 1Technische Information / Technical Information IGBT-Module FD600R06ME3 S2 IGBT-modules Vorlufige Daten Preliminary Data IGBT, Brems-Chopper / IGBT, Brake-Chopper Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25C V 600 V vj CES Collector-emitter voltage Kollektor-Dauergleichstrom T = 80C, T = 150C I 600 A C vj max C nom Continuous DC collector current Periodischer Kollektor-Spitzenstrom t = 1 ms I 1200 A P CRM Repetitive peak collector current Gesamt-Verlustleistung T = 25C, T = 150 P 2250 W C vj max tot Total power dissipation Gate-Emitter-Spitzenspannung VGES +/-20 V Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung I = 600 A, V = 15 V T = 25C 1,30 1,60 V C GE vj V CE sat Collector-emitter saturation voltage I = 600 A, V = 15 V T = 125C 1,35 V C GE vj Gate-Schwellenspannung IC = 24,0 mA, VCE = VGE, Tvj = 25C VGEth 4,9 5,8 6,5 V Gate threshold voltage Gateladung V = -15 V ... +15 V Q 9,60 C GE G Gate charge Interner Gatewiderstand Tvj = 25C RGint 0,33 Internal gate resistor Eingangskapazitt f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 60,0 nF vj CE GE ies Input capacitance Rckwirkungskapazitt f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 1,70 nF Reverse transfer capacitance Kollektor-Emitter-Reststrom V = 600 V, V = 0 V, T = 25C I 5,0 mA CE GE vj CES Collector-emitter cut-off current Gate-Emitter-Reststrom V = 0 V, V = 20 V, T = 25C I 400 nA CE GE vj GES Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last IC = 600 A, VCE = 150 V Tvj = 25C 0,115 s t d on Turn-on delay time, inductive load V = 15 V T = 125C 0,115 s GE vj RGon = 2,4 Anstiegszeit, induktive Last IC = 600 A, VCE = 150 V Tvj = 25C 0,15 s t r Rise time, inductive load V = 15 V T = 125C 0,16 s GE vj RGon = 2,4 Abschaltverzgerungszeit, induktive Last IC = 600 A, VCE = 150 V Tvj = 25C 0,81 s t d off Turn-off delay time, inductive load V = 15 V T = 125C 0,85 s GE vj RGoff = 2,4 Fallzeit, induktive Last IC = 600 A, VCE = 150 V Tvj = 25C 0,09 s t f Fall time, inductive load V = 15 V T = 125C 0,11 s GE vj RGoff = 2,4 Einschaltverlustenergie pro Puls IC = 600 A, VCE = 150 V, LS = 40 nH Tvj = 25C 4,00 mJ Turn-on energy loss per pulse V = 15 V, di/dt = 3000 A/s T = 125C E 6,10 mJ GE vj on RGon = 2,4 Abschaltverlustenergie pro Puls IC = 600 A, VCE = 150 V, LS = 40 nH Tvj = 25C 15,5 mJ Turn-off energy loss per pulse V = 15 V, du/dt = 1500 V/s T = 125C E 17,5 mJ GE vj off RGoff = 2,4 Kurzschluverhalten VGE 15 V, VCC = 360 V tP 8 s, Tvj = 25C 6300 A I SC SC data V = V -L di/dt t 6 s, T = 125C 4500 A CEmax CES sCE P vj Wrmewiderstand, Chip bis Gehuse pro IGBT / per IGBT R 0,055 K/W thJC Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro IGBT / per IGBT R 0,016 K/W thCH Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease Temperatur im Schaltbetrieb T -40 125 C vj op Temperature under switching conditions prepared by: CU date of publication: 2013-10-03 approved by: MK revision: 2.4 2