/ Technical Information IGBT- FD800R17HP4-K B2 IGBT-Module IHM-B IHM-B module with chopper configuration V = 1700V CES I = 800A / I = 1600A C nom CRM Typical Applications Chopper applications High power converters Traction drives Wind turbines Electrical Features T Extended operating temperature T vj op vj op V Low V CEsat CEsat Mechanical Features 4 kV 1 4 kV AC 1min insulation AlSiC AlSiC base plate for increased thermal cycling capability CTI > 400 Package with CTI > 400 High creepage and clearance distances High power and thermal cycling capability High power density IHM B IHM B housing Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 prepared by: WB date of publication: 2016-01-21 approved by: IB revision: V3.1 UL approved (E83335) 1 / Technical Information IGBT- FD800R17HP4-K B2 IGBT-Module IGBT, - / IGBT, Brake-Chopper / Maximum Rated Values Tvj = -40C 1570 Collector-emitter voltage T = 25C V 1700 V vj CES Tvj = 150C 1700 T = 100C, T = 175C I 800 A C vj max C nom Continuous DC collector current t = 1 ms I 1600 A P CRM Repetitive peak collector current T = 25C, T = 175C P 5,20 kW C vj max tot Total power dissipation V +/-20 V GES Gate-emitter peak voltage / Characteristic Values min. typ. max. I = 800 A, V = 15 V T = 25C 1,90 2,25 V C GE vj Collector-emitter saturation voltage I = 800 A, V = 15 V T = 125C V 2,30 V C GE vj CE sat IC = 800 A, VGE = 15 V Tvj = 150C 2,40 V IC = 48,0 mA, VCE = VGE, Tvj = 25C VGEth 5,20 5,80 6,40 V Gate threshold voltage V = -15 V ... +15 V Q 8,50 C GE G Gate charge Tvj = 25C RGint 1,9 Internal gate resistor f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 65,0 nF vj CE GE ies Input capacitance f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 2,10 nF Reverse transfer capacitance - V = 1570 V, V = 0 V, T = 25C I 5,0 mA CE GE vj CES Collector-emitter cut-off current - VCE = 0 V, VGE = 20 V, Tvj = 25C IGES 400 nA Gate-emitter leakage current () IC = 800 A, VCE = 900 V Tvj = 25C 0,50 s t d on Turn-on delay time, inductive load V = 15 V T = 125C 0,55 s GE vj RGon = 0,39 Tvj = 150C 0,55 s () IC = 800 A, VCE = 900 V Tvj = 25C 0,10 s t r Rise time, inductive load V = 15 V T = 125C 0,12 s GE vj RGon = 0,39 Tvj = 150C 0,12 s () IC = 800 A, VCE = 900 V Tvj = 25C 1,10 s t d off Turn-off delay time, inductive load V = 15 V T = 125C 1,20 s GE vj RGoff = 2,2 Tvj = 150C 1,25 s () IC = 800 A, VCE = 900 V Tvj = 25C 0,40 s t f Fall time, inductive load V = 15 V T = 125C 0,70 s GE vj RGoff = 2,2 Tvj = 150C 0,75 s () IC = 800 A, VCE = 900 V, LS = 50 nH Tvj = 25C 180 mJ Turn-on energy loss per pulse V = 15 V T = 125C E 245 mJ GE vj on RGon = 0,39 Tvj = 150C 265 mJ ( IC = 800 A, VCE = 900 V, LS = 50 nH Tvj = 25C 240 mJ Turn-off energy loss per pulse V = 15 V T = 125C E 325 mJ GE vj off RGoff = 2,2 Tvj = 150C 345 mJ VGE 15 V, VCC = 1000 V I SC SC data V = V -L di/dt t 10 s, T = 150C 3800 A CEmax CES sCE P vj IGBT / per IGBT RthJC 23,2 K/kW Thermal resistance, junction to case IGBT / per IGBT R 30,0 K/kW thCH Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease T -40 150 C vj op Temperature under switching conditions prepared by: WB date of publication: 2016-01-21 approved by: IB revision: V3.1 2
