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X-On Electronics has gained recognition as a prominent supplier of FD800R17HP4-K_B2 IGBT Modules across the USA, India, Europe, Australia, and various other global locations. FD800R17HP4-K_B2 IGBT Modules are a product manufactured by Infineon. We provide cost-effective solutions for IGBT Modules, ensuring timely deliveries around the world.

FD800R17HP4-K_B2 Infineon

FD800R17HP4-K_B2 electronic component of Infineon
Images are for reference only
See Product Specifications
Part No. FD800R17HP4-K_B2
Manufacturer: Infineon
Category: IGBT Modules
Description: IGBT Modules IGBT Module 800A 1700V
Datasheet: FD800R17HP4-K_B2 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2: USD 1079.9581 ea
Line Total: USD 2159.92 
Availability - 0
MOQ: 2  Multiples: 2
Pack Size: 2
Availability Price Quantity
0
Ship by Wed. 12 Mar to Fri. 14 Mar
MOQ : 2
Multiples : 2
2 : USD 1079.9581
10 : USD 1072.5

   
Manufacturer
Product Category
Product
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Maximum Operating Temperature
Minimum Operating Temperature
Packaging
Pd - Power Dissipation
Hts Code
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the FD800R17HP4-K_B2 from our IGBT Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FD800R17HP4-K_B2 and other electronic components in the IGBT Modules category and beyond.

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/ Technical Information IGBT- FD800R17HP4-K B2 IGBT-Module IHM-B IHM-B module with chopper configuration V = 1700V CES I = 800A / I = 1600A C nom CRM Typical Applications Chopper applications High power converters Traction drives Wind turbines Electrical Features T Extended operating temperature T vj op vj op V Low V CEsat CEsat Mechanical Features 4 kV 1 4 kV AC 1min insulation AlSiC AlSiC base plate for increased thermal cycling capability CTI > 400 Package with CTI > 400 High creepage and clearance distances High power and thermal cycling capability High power density IHM B IHM B housing Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 prepared by: WB date of publication: 2016-01-21 approved by: IB revision: V3.1 UL approved (E83335) 1 / Technical Information IGBT- FD800R17HP4-K B2 IGBT-Module IGBT, - / IGBT, Brake-Chopper / Maximum Rated Values Tvj = -40C 1570 Collector-emitter voltage T = 25C V 1700 V vj CES Tvj = 150C 1700 T = 100C, T = 175C I 800 A C vj max C nom Continuous DC collector current t = 1 ms I 1600 A P CRM Repetitive peak collector current T = 25C, T = 175C P 5,20 kW C vj max tot Total power dissipation V +/-20 V GES Gate-emitter peak voltage / Characteristic Values min. typ. max. I = 800 A, V = 15 V T = 25C 1,90 2,25 V C GE vj Collector-emitter saturation voltage I = 800 A, V = 15 V T = 125C V 2,30 V C GE vj CE sat IC = 800 A, VGE = 15 V Tvj = 150C 2,40 V IC = 48,0 mA, VCE = VGE, Tvj = 25C VGEth 5,20 5,80 6,40 V Gate threshold voltage V = -15 V ... +15 V Q 8,50 C GE G Gate charge Tvj = 25C RGint 1,9 Internal gate resistor f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 65,0 nF vj CE GE ies Input capacitance f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 2,10 nF Reverse transfer capacitance - V = 1570 V, V = 0 V, T = 25C I 5,0 mA CE GE vj CES Collector-emitter cut-off current - VCE = 0 V, VGE = 20 V, Tvj = 25C IGES 400 nA Gate-emitter leakage current () IC = 800 A, VCE = 900 V Tvj = 25C 0,50 s t d on Turn-on delay time, inductive load V = 15 V T = 125C 0,55 s GE vj RGon = 0,39 Tvj = 150C 0,55 s () IC = 800 A, VCE = 900 V Tvj = 25C 0,10 s t r Rise time, inductive load V = 15 V T = 125C 0,12 s GE vj RGon = 0,39 Tvj = 150C 0,12 s () IC = 800 A, VCE = 900 V Tvj = 25C 1,10 s t d off Turn-off delay time, inductive load V = 15 V T = 125C 1,20 s GE vj RGoff = 2,2 Tvj = 150C 1,25 s () IC = 800 A, VCE = 900 V Tvj = 25C 0,40 s t f Fall time, inductive load V = 15 V T = 125C 0,70 s GE vj RGoff = 2,2 Tvj = 150C 0,75 s () IC = 800 A, VCE = 900 V, LS = 50 nH Tvj = 25C 180 mJ Turn-on energy loss per pulse V = 15 V T = 125C E 245 mJ GE vj on RGon = 0,39 Tvj = 150C 265 mJ ( IC = 800 A, VCE = 900 V, LS = 50 nH Tvj = 25C 240 mJ Turn-off energy loss per pulse V = 15 V T = 125C E 325 mJ GE vj off RGoff = 2,2 Tvj = 150C 345 mJ VGE 15 V, VCC = 1000 V I SC SC data V = V -L di/dt t 10 s, T = 150C 3800 A CEmax CES sCE P vj IGBT / per IGBT RthJC 23,2 K/kW Thermal resistance, junction to case IGBT / per IGBT R 30,0 K/kW thCH Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease T -40 150 C vj op Temperature under switching conditions prepared by: WB date of publication: 2016-01-21 approved by: IB revision: V3.1 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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