Technische Information / Technical Information IGBT-Module FF650R17IE4 IGBT-modules PrimePACK2 Modul und NTC PrimePACK2 module and NTC V = 1700V CES I = 650A / I = 1300A C nom CRM Typische Anwendungen Typical Applications 3-Level-Applikationen 3-Level-Applications Hilfsumrichter Auxiliary Inverters Hochleistungsumrichter High Power Converters Motorantriebe Motor Drives Windgeneratoren Wind Turbines Elektrische Eigenschaften Electrical Features Erweiterte Sperrschichttemperatur T Extended Operation Temperature T vj op vj op Groe DC-Festigkeit High DC Stability Hohe Stromdichte High Current Density Niedrige Schaltverluste Low Switching Losses T = 150C T = 150C vj op vj op Niedriges V Low V CEsat CEsat Mechanische Eigenschaften Mechanical Features Gehuse mit CTI > 400 Package with CTI > 400 Groe Luft- und Kriechstrecken High Creepage and Clearance Distances Hohe Last- und thermische Wechselfestigkeit High Power and Thermal Cycling Capability Hohe Leistungsdichte High Power Density Kupferbodenplatte Copper Base Plate Standardgehuse Standard Housing Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 prepared by: TA date of publication: 2013-11-05 approved by: PL revision: 3.3 1Technische Information / Technical Information IGBT-Module FF650R17IE4 IGBT-modules IGBT,Wechselrichter / IGBT,Inverter Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25C V 1700 V vj CES Collector-emitter voltage Kollektor-Dauergleichstrom T = 100C, T = 175C I 650 A C vj max C nom Continuous DC collector current TC = 25C, Tvj max = 175C IC 930 A Periodischer Kollektor-Spitzenstrom t = 1 ms I 1300 A P CRM Repetitive peak collector current Gesamt-Verlustleistung T = 25C, T = 175C P 4,15 kW C vj max tot Total power dissipation Gate-Emitter-Spitzenspannung VGES +/-20 V Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung I = 650 A, V = 15 V T = 25C 2,00 2,45 V C GE vj Collector-emitter saturation voltage I = 650 A, V = 15 V T = 125C V 2,35 2,80 V C GE vj CE sat I = 650 A, V = 15 V T = 150C 2,45 V C GE vj Gate-Schwellenspannung I = 24,0 mA, V = V , T = 25C V 5,2 5,8 6,4 V C CE GE vj GEth Gate threshold voltage Gateladung VGE = -15 V ... +15 V QG 7,00 C Gate charge Interner Gatewiderstand T = 25C R 2,3 vj Gint Internal gate resistor Eingangskapazitt f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 54,0 nF Input capacitance Rckwirkungskapazitt f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 1,70 nF vj CE GE res Reverse transfer capacitance Kollektor-Emitter-Reststrom VCE = 1700 V, VGE = 0 V, Tvj = 25C ICES 5,0 mA Collector-emitter cut-off current Gate-Emitter-Reststrom V = 0 V, V = 20 V, T = 25C I 400 nA CE GE vj GES Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last I = 650 A, V = 900 V T = 25C 0,55 s C CE vj t d on Turn-on delay time, inductive load VGE = 15 V Tvj = 125C 0,60 s R = 1,8 T = 150C 0,60 s Gon vj Anstiegszeit, induktive Last I = 650 A, V = 900 V T = 25C 0,09 s C CE vj t r Rise time, inductive load VGE = 15 V Tvj = 125C 0,11 s R = 1,8 T = 150C 0,12 s Gon vj Abschaltverzgerungszeit, induktive Last I = 650 A, V = 900 V T = 25C 1,00 s C CE vj t d off Turn-off delay time, inductive load VGE = 15 V Tvj = 125C 1,25 s R = 2,7 T = 150C 1,30 s Goff vj Fallzeit, induktive Last I = 650 A, V = 900 V T = 25C 0,29 s C CE vj t f Fall time, inductive load VGE = 15 V Tvj = 125C 0,49 s R = 2,7 T = 150C 0,57 s Goff vj Einschaltverlustenergie pro Puls I = 650 A, V = 900 V, L = 45 nH T = 25C 205 mJ C CE S vj Turn-on energy loss per pulse VGE = 15 V, di/dt = 5000 A/s (Tvj = 150C) Tvj = 125C Eon 300 mJ R = 1,8 T = 150C 320 mJ Gon vj Abschaltverlustenergie pro Puls I = 650 A, V = 900 V, L = 45 nH T = 25C 140 mJ C CE S vj Turn-off energy loss per pulse VGE = 15 V, du/dt = 3200 V/s (Tvj = 150C)Tvj = 125C Eoff 205 mJ R = 2,7 T = 150C 230 mJ Goff vj Kurzschluverhalten V 15 V, V = 1000 V GE CC ISC SC data VCEmax = VCES -LsCE di/dt tP 10 s, Tvj = 150C 2700 A Wrmewiderstand, Chip bis Gehuse pro IGBT / per IGBT R 36,0 K/kW thJC Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro IGBT / per IGBT R 14,0 K/kW thCH Thermal resistance, case to heatsink Paste = 1 W/(mK) / grease = 1 W/(mK) Temperatur im Schaltbetrieb T -40 150 C vj op Temperature under switching conditions prepared by: TA date of publication: 2013-11-05 approved by: PL revision: 3.3 2