/ Technical Information IGBT- FF1000R17IE4D B2 IGBT-modules PrimePACK3 NTC PrimePACK3 module and NTC / Preliminary Data VCES = 1700V I = 1000A / I = 2000A C nom CRM Typical Applications 3-Level-Applications Auxiliary Inverters High Power Converters Motor Drives Traction Drives Wind Turbines Electrical Features T Extended Operation Temperature T vj op vj op High DC Stability High Current Density Low Switching Losses T = 150C T = 150C vj op vj op Enlarged Diode for regenerative operation VCEsat Low VCEsat Mechanical Features CTI > 400 Package with CTI > 400 High Creepage and Clearance Distances High Power and Thermal Cycling Capability High Power Density Copper Base Plate Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 prepared by: TA date of publication: 2013-11-05 approved by: PL revision: 2.1 1 / Technical Information IGBT- FF1000R17IE4D B2 IGBT-modules Preliminary Data IGBT, / IGBT,Inverter / Maximum Rated Values T = 25C V 1700 V vj CES Collector-emitter voltage T = 100C, T = 175C I 1000 A C vj max C nom Continuous DC collector current TC = 25C, Tvj max = 175C IC 1390 A t = 1 ms I 2000 A P CRM Repetitive peak collector current T = 25C, T = 175C P 6,25 kW C vj max tot Total power dissipation VGES +/-20 V Gate-emitter peak voltage / Characteristic Values min. typ. max. I = 1000 A, V = 15 V T = 25C 2,00 2,45 V C GE vj Collector-emitter saturation voltage I = 1000 A, V = 15 V T = 125C V 2,35 2,80 V C GE vj CE sat I = 1000 A, V = 15 V T = 150C 2,45 V C GE vj I = 36,0 mA, V = V , T = 25C V 5,2 5,8 6,4 V C CE GE vj GEth Gate threshold voltage VGE = -15 V ... +15 V QG 10,0 C Gate charge T = 25C R 1,8 vj Gint Internal gate resistor f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 81,0 nF Input capacitance f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 2,60 nF vj CE GE res Reverse transfer capacitance - VCE = 1700 V, VGE = 0 V, Tvj = 25C ICES 5,0 mA Collector-emitter cut-off current - V = 0 V, V = 20 V, T = 25C I 400 nA CE GE vj GES Gate-emitter leakage current () I = 1000 A, V = 900 V T = 25C 0,66 s C CE vj t d on Turn-on delay time, inductive load VGE = 15 V Tvj = 125C 0,70 s R = 0,3 T = 150C 0,71 s Gon vj () I = 1000 A, V = 900 V T = 25C 0,10 s C CE vj t r Rise time, inductive load VGE = 15 V Tvj = 125C 0,11 s R = 0,3 T = 150C 0,12 s Gon vj () I = 1000 A, V = 900 V T = 25C 1,15 s C CE vj t d off Turn-off delay time, inductive load VGE = 15 V Tvj = 125C 1,30 s R = 1,2 T = 150C 1,35 s Goff vj () I = 1000 A, V = 900 V T = 25C 0,25 s C CE vj t f Fall time, inductive load VGE = 15 V Tvj = 125C 0,48 s R = 1,2 T = 150C 0,56 s Goff vj () I = 1000 A, V = 900 V, L = 30 nH T = 25C 260 mJ C CE S vj Turn-on energy loss per pulse VGE = 15 V, di/dt = 8900 A/s (Tvj = 150C) Tvj = 125C Eon 365 mJ R = 0,3 T = 150C 415 mJ Gon vj ( I = 1000 A, V = 900 V, L = 30 nH T = 25C 210 mJ C CE S vj Turn-off energy loss per pulse VGE = 15 V, du/dt = 2800 V/s (Tvj = 150C)Tvj = 125C Eoff 315 mJ R = 1,2 T = 150C 345 mJ Goff vj V 15 V, V = 1000 V GE CC ISC SC data VCEmax = VCES -LsCE di/dt tP 10 s, Tvj = 150C 4000 A IGBT / per IGBT R 24,0 K/kW thJC Thermal resistance, junction to case IGBT / per IGBT R 10,0 K/kW thCH Thermal resistance, case to heatsink Paste = 1 W/(mK) / grease = 1 W/(mK) T -40 150 C vj op Temperature under switching conditions prepared by: TA date of publication: 2013-11-05 approved by: PL revision: 2.1 2