/ Technical Information IGBT- FF1400R17IP4P IGBT-Module PrimePACK3 / IGBT4 and diode PrimePACK3 module with Trench/Fieldstop IGBT4 and Emitter Controlled diode V = 1700V CES I = 1400A / I = 2800A C nom CRM Typical Applications High power converters Motor drives Wind turbines Electrical Features High short-circuit capability High surge current capability High current density Tvj op = 150C Tvj op = 150C V V with positive temperature coefficient CEsat CEsat Mechanical Features 4 kV AC 1 4 kV AC 1min insulation CTI(>400 Package with CTI > 400 / High creepage and clearance distances NTC Integrated NTC temperature sensor RoHS RoHS compliant Pre-applied Thermal Interface Material Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 prepared by: SM date of publication: 2016-09-07 approved by: RN revision: V3.1 UL approved (E83335) 1 / Technical Information IGBT- FF1400R17IP4P IGBT-Module IGBT- / IGBT,Inverter / Maximum Rated Values T = 25C V 1700 V vj CES Collector-emitter voltage DC T = 65C, T = 175C I 1400 A H vj max C nom Continuous DC collector current t = 1 ms I 2800 A P CRM Repetitive peak collector current V +/-20 V GES Gate-emitter peak voltage / Characteristic Values min. typ. max. I = 1400 A, V = 15 V T = 25C 1,75 2,20 V C GE vj Collector-emitter saturation voltage I = 1400 A, V = 15 V T = 125C V 2,10 2,65 V C GE vj CE sat IC = 1400 A, VGE = 15 V Tvj = 150C 2,20 2,80 V IC = 50,0 mA, VCE = VGE, Tvj = 25C VGEth 5,20 5,80 6,40 V Gate threshold voltage V = -15 V ... +15 V Q 13,5 C GE G Gate charge Tvj = 25C RGint 1,6 Internal gate resistor f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 110 nF vj CE GE ies Input capacitance f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 3,60 nF Reverse transfer capacitance V = 1700 V, V = 0 V, T = 25C I 5,0 mA CE GE vj CES Collector-emitter cut-off current VCE = 0 V, VGE = 20 V, Tvj = 25C IGES 400 nA Gate-emitter leakage current IC = 1400 A, VCE = 900 V Tvj = 25C 0,84 s t d on Turn-on delay time, inductive load V = 15 V T = 125C 0,88 s GE vj RGon = 0,47 Tvj = 150C 0,89 s IC = 1400 A, VCE = 900 V Tvj = 25C 0,13 s t r Rise time, inductive load V = 15 V T = 125C 0,14 s GE vj RGon = 0,47 Tvj = 150C 0,14 s IC = 1400 A, VCE = 900 V Tvj = 25C 1,15 s t d off Turn-off delay time, inductive load V = 15 V T = 125C 1,35 s GE vj RGoff = 0,68 Tvj = 150C 1,40 s IC = 1400 A, VCE = 900 V Tvj = 25C 0,50 s t f Fall time, inductive load V = 15 V T = 125C 0,77 s GE vj RGoff = 0,68 Tvj = 150C 0,79 s IC = 1400 A, VCE = 900 V, LS = 30 nH Tvj = 25C 340 mJ Turn-on energy loss per pulse V = 15 V, di/dt = 9500 A/s (T = 150C) T = 125C E 500 mJ GE vj vj on RGon = 0,47 Tvj = 150C 560 mJ IC = 1400 A, VCE = 900 V, LS = 30 nH Tvj = 25C 440 mJ Turn-off energy loss per pulse V = 15 V, du/dt = 2500 V/s (T = 150C)T = 125C E 625 mJ GE vj vj off RGoff = 0,68 Tvj = 150C 650 mJ VGE 15 V, VCC = 1000 V I SC SC data V = V -L di/dt t 10 s, T = 150C 5600 A CEmax CES sCE P vj IGBT / per IGBT RthJH 27,4 K/kW Thermal resistance, junction to heatsink valid with IFX pre-applied thermal interface material T -40 150 C vj op Temperature under switching conditions prepared by: SM date of publication: 2016-09-07 approved by: RN revision: V3.1 2