Technische Information / Technical Information IGBT-Module FF150R12KS4 IGBT-modules 62mm C-Serien Modul mit schnellem IGBT2 fr hochfrequentes Schalten 62mm C-Series module with the fast IGBT2 for high-frequency switching V = 1200V CES I = 150A / I = 300A C nom CRM Typische Anwendungen Typical Applications Anwendungen mit hohen Schaltfrequenzen High Frequency Switching Application Medizinische Anwendungen Medical Applications Motorantriebe Motor Drives Anwendungen fr Resonanz Umrichter Resonant Inverter Appliccations Servoumrichter Servo Drives USV-Systeme UPS Systems Elektrische Eigenschaften Electrical Features Hohe Kurzschlussrobustheit, selbstlimitierender High Short Circuit Capability, Self Limiting Short Kurzschlussstrom Circuit Current Niedrige Schaltverluste Low Switching Losses Sehr groe Robustheit Unbeatable Robustness V mit positivem Temperaturkoeffizienten V with positive Temperature Coefficient CEsat CEsat Mechanische Eigenschaften Mechanical Features Gehuse mit CTI > 400 Package with CTI > 400 Groe Luft- und Kriechstrecken High Creepage and Clearance Distances Isolierte Bodenplatte Isolated Base Plate Kupferbodenplatte Copper Base Plate Standardgehuse Standard Housing Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 prepared by: MB date of publication: 2013-10-02 approved by: WR revision: 3.4 UL approved (E83335) 1Technische Information / Technical Information IGBT-Module FF150R12KS4 IGBT-modules IGBT,Wechselrichter / IGBT,Inverter Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25C V 1200 V vj CES Collector-emitter voltage Kollektor-Dauergleichstrom T = 75C, T = 150C I 150 A C vj max C nom Continuous DC collector current TC = 25C, Tvj max = 150C IC 225 A Periodischer Kollektor-Spitzenstrom t = 1 ms I 300 A P CRM Repetitive peak collector current Gesamt-Verlustleistung T = 25C, T = 150 P 1250 W C vj max tot Total power dissipation Gate-Emitter-Spitzenspannung VGES +/-20 V Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung I = 150 A, V = 15 V T = 25C 3,20 3,70 V C GE vj V CE sat Collector-emitter saturation voltage I = 150 A, V = 15 V T = 125C 3,85 V C GE vj Gate-Schwellenspannung IC = 6,00 mA, VCE = VGE, Tvj = 25C VGEth 4,5 5,5 6,5 V Gate threshold voltage Gateladung V = -15 V ... +15 V Q 1,60 C GE G Gate charge Interner Gatewiderstand Tvj = 25C RGint 2,5 Internal gate resistor Eingangskapazitt f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 11,0 nF vj CE GE ies Input capacitance Rckwirkungskapazitt f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 0,50 nF Reverse transfer capacitance Kollektor-Emitter-Reststrom V = 1200 V, V = 0 V, T = 25C I 5,0 mA CE GE vj CES Collector-emitter cut-off current Gate-Emitter-Reststrom V = 0 V, V = 20 V, T = 25C I 400 nA CE GE vj GES Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last IC = 150 A, VCE = 600 V Tvj = 25C 0,10 s t d on Turn-on delay time, inductive load V = 15 V T = 125C 0,11 s GE vj RGon = 6,8 Anstiegszeit, induktive Last IC = 150 A, VCE = 600 V Tvj = 25C 0,06 s t r Rise time, inductive load V = 15 V T = 125C 0,07 s GE vj RGon = 6,8 Abschaltverzgerungszeit, induktive Last IC = 150 A, VCE = 600 V Tvj = 25C 0,53 s t d off Turn-off delay time, inductive load V = 15 V T = 125C 0,55 s GE vj RGoff = 6,8 Fallzeit, induktive Last IC = 150 A, VCE = 600 V Tvj = 25C 0,03 s t f Fall time, inductive load V = 15 V T = 125C 0,04 s GE vj RGoff = 6,8 Einschaltverlustenergie pro Puls IC = 150 A, VCE = 600 V, LS = 60 nH Tvj = 25C mJ Turn-on energy loss per pulse V = 15 V, di/dt = 1500 A/s T = 125C E 14,5 mJ GE vj on RGon = 6,8 Abschaltverlustenergie pro Puls IC = 150 A, VCE = 600 V, LS = 60 nH Tvj = 25C mJ Turn-off energy loss per pulse V = 15 V T = 125C E 11,0 mJ GE vj off RGoff = 6,8 Kurzschluverhalten VGE 15 V, VCC = 900 V I SC SC data V = V -L di/dt t 10 s, T = 125C 950 A CEmax CES sCE P vj Wrmewiderstand, Chip bis Gehuse pro IGBT / per IGBT R 0,10 K/W thJC Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro IGBT / per IGBT R 0,03 K/W thCH Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease Temperatur im Schaltbetrieb T -40 125 C vj op Temperature under switching conditions prepared by: MB date of publication: 2013-10-02 approved by: WR revision: 3.4 2