Technische Information / Technical Information IGBT-Module FF150R12ME3G IGBT-modules EconoDUAL Modul mit Trench/Feldstop IGBT3 und High Efficiency Diode EconoDUAL module with trench/fieldstop IGBT3 and Emitter Controlled High Efficiency diode Vorlufige Daten IGBT,Wechselrichter / IGBT,Inverter Preliminary Data Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25C V 1200 V vj CES Collector-emitter voltage Kollektor-Dauergleichstrom T = 80C, T = 150C I 150 A C vj max C nom Continuous DC collector current TC = 25C, Tvj max = 150C IC 200 A Periodischer Kollektor-Spitzenstrom t = 1 ms I 300 A P CRM Repetitive peak collector current Gesamt-Verlustleistung T = 25C, T = 150 P 695 W C vj max tot Total power dissipation Gate-Emitter-Spitzenspannung VGES +/-20 V Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung I = 150 A, V = 15 V T = 25C 1,70 2,15 V C GE vj V CE sat Collector-emitter saturation voltage I = 150 A, V = 15 V T = 125C 2,00 V C GE vj Gate-Schwellenspannung IC = 6,00 mA, VCE = VGE, Tvj = 25C VGEth 5,0 5,8 6,5 V Gate threshold voltage Gateladung V = -15 V ... +15 V Q 1,40 C GE G Gate charge Interner Gatewiderstand Tvj = 25C RGint 1,3 Internal gate resistor Eingangskapazitt f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 10,5 nF vj CE GE ies Input capacitance Rckwirkungskapazitt f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 0,50 nF Reverse transfer capacitance Kollektor-Emitter-Reststrom V = 1200 V, V = 0 V, T = 25C I 5,0 mA CE GE vj CES Collector-emitter cut-off current Gate-Emitter-Reststrom V = 0 V, V = 20 V, T = 25C I 400 nA CE GE vj GES Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last IC = 150 A, VCE = 600 V Tvj = 25C 0,25 s t d on Turn-on delay time, inductive load V = 15 V T = 125C 0,30 s GE vj RGon = 8,2 Anstiegszeit, induktive Last IC = 150 A, VCE = 600 V Tvj = 25C 0,09 s t r Rise time, inductive load V = 15 V T = 125C 0,10 s GE vj RGon = 8,2 Abschaltverzgerungszeit, induktive Last IC = 150 A, VCE = 600 V Tvj = 25C 0,55 s t d off Turn-off delay time, inductive load V = 15 V T = 125C 0,65 s GE vj RGoff = 8,2 Fallzeit, induktive Last IC = 150 A, VCE = 600 V Tvj = 25C 0,13 s t f Fall time, inductive load V = 15 V T = 125C 0,16 s GE vj RGoff = 8,2 Einschaltverlustenergie pro Puls IC = 150 A, VCE = 600 V, LS = 80 nH Tvj = 25C 8,00 mJ Turn-on energy loss per pulse V = 15 V, di/dt = 2600 A/s T = 125C E 11,0 mJ GE vj on RGon = 8,2 Abschaltverlustenergie pro Puls IC = 150 A, VCE = 600 V, LS = 80 nH Tvj = 25C 16,0 mJ Turn-off energy loss per pulse V = 15 V, du/dt = 3600 V/s T = 125C E 24,0 mJ GE vj off RGoff = 8,2 Kurzschluverhalten VGE 15 V, VCC = 900 V I SC SC data V = V -L di/dt t 10 s, T = 125C 600 A CEmax CES sCE P vj Wrmewiderstand, Chip bis Gehuse pro IGBT / per IGBT R 0,18 K/W thJC Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro IGBT / per IGBT R 0,03 K/W thCH Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease Temperatur im Schaltbetrieb T -40 125 C vj op Temperature under switching conditions prepared by: MB date of publication: 2013-10-03 approved by: MK revision: 2.2 1Technische Information / Technical Information IGBT-Module FF150R12ME3G IGBT-modules Vorlufige Daten Preliminary Data Diode, Wechselrichter / Diode, Inverter Hchstzulssige Werte / Maximum Rated Values Periodische Spitzensperrspannung T = 25C V 1200 V vj RRM Repetitive peak reverse voltage Dauergleichstrom I 150 A F Continuous DC forward current Periodischer Spitzenstrom t = 1 ms I 300 A P FRM Repetitive peak forward current Grenzlastintegral V = 0 V, t = 10 ms, T = 125C It 4600 As R P vj It - value Charakteristische Werte / Characteristic Values min. typ. max. Durchlassspannung I = 150 A, V = 0 V T = 25C 1,65 2,15 V F GE vj VF Forward voltage I = 150 A, V = 0 V T = 125C 1,65 V F GE vj Rckstromspitze I = 150 A, - di /dt = 2600 A/s (T =125C) T = 25C 110 A F F vj vj Peak reverse recovery current V = 600 V T = 125C I 140 A R vj RM V = -15 V GE Sperrverzgerungsladung I = 150 A, - di /dt = 2600 A/s (T =125C) T = 25C 15,0 C F F vj vj Recovered charge V = 600 V T = 125C Q 28,0 C R vj r V = -15 V GE Abschaltenergie pro Puls I = 150 A, - di /dt = 2600 A/s (T =125C) T = 25C 7,00 mJ F F vj vj Reverse recovery energy V = 600 V T = 125C E 14,0 mJ R vj rec V = -15 V GE Wrmewiderstand, Chip bis Gehuse pro Diode / per diode R 0,34 K/W thJC Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro Diode / per diode RthCH 0,05 K/W Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease Temperatur im Schaltbetrieb T -40 125 C vj op Temperature under switching conditions NTC-Widerstand / NTC-Thermistor Charakteristische Werte / Characteristic Values min. typ. max. Nennwiderstand T = 25C R 5,00 k C 25 Rated resistance Abweichung von R100 T = 100C, R = 493 R/R -5 5 % C 100 Deviation of R100 Verlustleistung T = 25C P 20,0 mW C 25 Power dissipation B-Wert R = R exp B (1/T - 1/(298,15 K)) B 3375 K 2 25 25/50 2 25/50 B-value B-Wert R = R exp B (1/T - 1/(298,15 K)) B 3411 K 2 25 25/80 2 25/80 B-value B-Wert R2 = R25 exp B25/100(1/T2 - 1/(298,15 K)) B25/100 3433 K B-value Angaben gem gltiger Application Note. Specification according to the valid application note. prepared by: MB date of publication: 2013-10-03 approved by: MK revision: 2.2 2