Technische Information / Technical Information IGBT-Module FF200R06KE3 IGBT-modules 62mm C-Serien Modul mit Trench/Feldstop IGBT3 und Emitter Controlled3 Diode 62mm C-Serien module with trench/fieldstop IGBT3 and Emitter Controlled3 diode IGBT,Wechselrichter / IGBT,Inverter Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25C V 600 V vj CES Collector-emitter voltage Kollektor-Dauergleichstrom T = 80C, T = 175C I 200 A C vj max C nom Continuous DC collector current TC = 25C, Tvj max = 175C IC 260 A Periodischer Kollektor-Spitzenstrom t = 1 ms I 400 A P CRM Repetitive peak collector current Gesamt-Verlustleistung T = 25C, T = 175 P 680 W C vj max tot Total power dissipation Gate-Emitter-Spitzenspannung VGES +/-20 V Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung I = 200 A, V = 15 V T = 25C 1,45 1,90 V C GE vj Collector-emitter saturation voltage I = 200 A, V = 15 V T = 125C V 1,60 V C GE vj CE sat I = 200 A, V = 15 V T = 150C 1,70 V C GE vj Gate-Schwellenspannung I = 3,20 mA, V = V , T = 25C V 4,9 5,8 6,5 V C CE GE vj GEth Gate threshold voltage Gateladung VGE = -15 V ... +15 V QG 2,10 C Gate charge Interner Gatewiderstand T = 25C R 1,0 vj Gint Internal gate resistor Eingangskapazitt f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 13,0 nF Input capacitance Rckwirkungskapazitt f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 0,38 nF vj CE GE res Reverse transfer capacitance Kollektor-Emitter-Reststrom VCE = 600 V, VGE = 0 V, Tvj = 25C ICES 5,0 mA Collector-emitter cut-off current Gate-Emitter-Reststrom V = 0 V, V = 20 V, T = 25C I 400 nA CE GE vj GES Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last I = 200 A, V = 300 V T = 25C 0,11 s C CE vj t d on Turn-on delay time, inductive load VGE = 15 V Tvj = 125C 0,12 s R = 3,9 T = 150C 0,13 s Gon vj Anstiegszeit, induktive Last I = 200 A, V = 300 V T = 25C 0,05 s C CE vj t r Rise time, inductive load VGE = 15 V Tvj = 125C 0,06 s R = 3,9 T = 150C 0,06 s Gon vj Abschaltverzgerungszeit, induktive Last I = 200 A, V = 300 V T = 25C 0,49 s C CE vj t d off Turn-off delay time, inductive load VGE = 15 V Tvj = 125C 0,52 s R = 3,9 T = 150C 0,53 s Goff vj Fallzeit, induktive Last I = 200 A, V = 300 V T = 25C 0,05 s C CE vj t f Fall time, inductive load VGE = 15 V Tvj = 125C 0,07 s R = 3,9 T = 150C 0,07 s Goff vj Einschaltverlustenergie pro Puls I = 200 A, V = 300 V, L = 30 nH T = 25C mJ C CE S vj Turn-on energy loss per pulse VGE = 15 V, di/dt = 6000 A/s (Tvj = 150C) Tvj = 125C Eon 2,90 mJ R = 3,9 T = 150C 3,30 mJ Gon vj Abschaltverlustenergie pro Puls I = 200 A, V = 300 V, L = 30 nH T = 25C mJ C CE S vj Turn-off energy loss per pulse VGE = 15 V, du/dt = 3500 V/s (Tvj = 150C)Tvj = 125C Eoff 7,90 mJ R = 3,9 T = 150C 8,30 mJ Goff vj Kurzschluverhalten V 15 V, V = 360 V t 8 s, T = 25C 1400 A GE CC P vj ISC SC data VCEmax = VCES -LsCE di/dt tP 6 s, Tvj = 150C 1000 A Wrmewiderstand, Chip bis Gehuse pro IGBT / per IGBT R 0,22 K/W thJC Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro IGBT / per IGBT R 0,03 K/W thCH Thermal resistance, case to heatsink Paste = 1 W/(mK) / grease = 1 W/(mK) Temperatur im Schaltbetrieb T -40 150 C vj op Temperature under switching conditions prepared by: MK date of publication: 2013-10-03 approved by: WR revision: 3.0 1Technische Information / Technical Information IGBT-Module FF200R06KE3 IGBT-modules Diode, Wechselrichter / Diode, Inverter Hchstzulssige Werte / Maximum Rated Values Periodische Spitzensperrspannung T = 25C V 600 V vj RRM Repetitive peak reverse voltage Dauergleichstrom I 200 A F Continuous DC forward current Periodischer Spitzenstrom t = 1 ms I 400 A P FRM Repetitive peak forward current Grenzlastintegral V = 0 V, t = 10 ms, T = 125C 5000 As R P vj It It - value VR = 0 V, tP = 10 ms, Tvj = 150C 4700 As Charakteristische Werte / Characteristic Values min. typ. max. Durchlassspannung I = 200 A, V = 0 V T = 25C 1,55 1,95 V F GE vj Forward voltage I = 200 A, V = 0 V T = 125C V 1,50 V F GE vj F IF = 200 A, VGE = 0 V Tvj = 150C 1,45 V Rckstromspitze I = 200 A, - di /dt = 6000 A/s (T =150C) T = 25C 130 A F F vj vj Peak reverse recovery current V = 300 V T = 125C I 160 A R vj RM VGE = -15 V Tvj = 150C 170 A Sperrverzgerungsladung I = 200 A, - di /dt = 6000 A/s (T =150C) T = 25C 9,00 C F F vj vj Recovered charge V = 300 V T = 125C Q 16,0 C R vj r VGE = -15 V Tvj = 150C 19,0 C Abschaltenergie pro Puls I = 200 A, - di /dt = 6000 A/s (T =150C) T = 25C 2,30 mJ F F vj vj Reverse recovery energy V = 300 V T = 125C E 4,10 mJ R vj rec VGE = -15 V Tvj = 150C 4,70 mJ Wrmewiderstand, Chip bis Gehuse pro Diode / per diode RthJC 0,42 K/W Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro Diode / per diode R 0,06 K/W thCH Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease Temperatur im Schaltbetrieb Tvj op -40 150 C Temperature under switching conditions prepared by: MK date of publication: 2013-10-03 approved by: WR revision: 3.0 2