X-On Electronics has gained recognition as a prominent supplier of FF200R12KE4 IGBT Modules across the USA, India, Europe, Australia, and various other global locations. FF200R12KE4 IGBT Modules are a product manufactured by Infineon. We provide cost-effective solutions for IGBT Modules, ensuring timely deliveries around the world.

FF200R12KE4 Infineon

FF200R12KE4 electronic component of Infineon
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Part No.FF200R12KE4
Manufacturer: Infineon
Category: IGBT Modules
Description: Infineon Technologies IGBT Modules IGBT-MODULE
Datasheet: FF200R12KE4 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 94.567 ea
Line Total: USD 94.57 
Availability - 62
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
62
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 94.567
10 : USD 83.138

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Maximum Operating Temperature
Minimum Operating Temperature
Packaging
Pd - Power Dissipation
Package / Case
Brand
Mounting Style
Maximum Gate Emitter Voltage
Factory Pack Quantity :
Height
Length
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the FF200R12KE4 from our IGBT Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FF200R12KE4 and other electronic components in the IGBT Modules category and beyond.

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Technische Information / Technical Information IGBT-Module FF200R12KE4 IGBT-modules 62mm C-Serien Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled Diode 62mm C-series module with trench/fieldstop IGBT4 and Emitter Controlled diode IGBT,Wechselrichter / IGBT,Inverter Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25C V 1200 V vj CES Collector-emitter voltage Kollektor-Dauergleichstrom T = 100C, T = 175C I 200 A C vj max C nom Continuous DC collector current TC = 25C, Tvj max = 175C IC 240 A Periodischer Kollektor-Spitzenstrom t = 1 ms I 400 A P CRM Repetitive peak collector current Gesamt-Verlustleistung T = 25C, T = 175C P 1100 W C vj max tot Total power dissipation Gate-Emitter-Spitzenspannung VGES +/-20 V Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung I = 200 A, V = 15 V T = 25C 1,75 2,15 V C GE vj Collector-emitter saturation voltage I = 200 A, V = 15 V T = 125C V 2,00 V C GE vj CE sat I = 200 A, V = 15 V T = 150C 2,05 V C GE vj Gate-Schwellenspannung I = 7,60 mA, V = V , T = 25C V 5,2 5,8 6,4 V C CE GE vj GEth Gate threshold voltage Gateladung VGE = -15 V ... +15 V QG 1,80 C Gate charge Interner Gatewiderstand T = 25C R 3,8 vj Gint Internal gate resistor Eingangskapazitt f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 14,0 nF Input capacitance Rckwirkungskapazitt f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 0,50 nF vj CE GE res Reverse transfer capacitance Kollektor-Emitter-Reststrom VCE = 1200 V, VGE = 0 V, Tvj = 25C ICES 5,0 mA Collector-emitter cut-off current Gate-Emitter-Reststrom V = 0 V, V = 20 V, T = 25C I 400 nA CE GE vj GES Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last I = 200 A, V = 600 V T = 25C 0,20 s C CE vj t d on Turn-on delay time, inductive load VGE = 15 V Tvj = 125C 0,25 s R = 2,7 T = 150C 0,27 s Gon vj Anstiegszeit, induktive Last I = 200 A, V = 600 V T = 25C 0,045 s C CE vj t r Rise time, inductive load VGE = 15 V Tvj = 125C 0,05 s R = 2,7 T = 150C 0,055 s Gon vj Abschaltverzgerungszeit, induktive Last I = 200 A, V = 600 V T = 25C 0,50 s C CE vj t d off Turn-off delay time, inductive load VGE = 15 V Tvj = 125C 0,60 s R = 2,7 T = 150C 0,62 s Goff vj Fallzeit, induktive Last I = 200 A, V = 600 V T = 25C 0,10 s C CE vj t f Fall time, inductive load VGE = 15 V Tvj = 125C 0,16 s R = 2,7 T = 150C 0,18 s Goff vj Einschaltverlustenergie pro Puls I = 200 A, V = 600 V, L = 30 nH T = 25C 10,0 mJ C CE S vj Turn-on energy loss per pulse VGE = 15 V, di/dt = 4000 A/s (Tvj = 150C) Tvj = 125C Eon 15,0 mJ R = 2,7 T = 150C 17,0 mJ Gon vj Abschaltverlustenergie pro Puls I = 200 A, V = 600 V, L = 30 nH T = 25C 17,0 mJ C CE S vj Turn-off energy loss per pulse VGE = 15 V, du/dt = 4000 V/s (Tvj = 150C)Tvj = 125C Eoff 26,0 mJ R = 2,7 T = 150C 29,0 mJ Goff vj Kurzschluverhalten V 15 V, V = 800 V GE CC ISC SC data VCEmax = VCES -LsCE di/dt tP 10 s, Tvj = 150C 800 A Wrmewiderstand, Chip bis Gehuse pro IGBT / per IGBT R 0,135 K/W thJC Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro IGBT / per IGBT R 0,034 K/W thCH Thermal resistance, case to heatsink Paste = 1 W/(mK) / grease = 1 W/(mK) Temperatur im Schaltbetrieb T -40 150 C vj op Temperature under switching conditions prepared by: MK date of publication: 2013-11-04 approved by: WR revision: 3.0 1Technische Information / Technical Information IGBT-Module FF200R12KE4 IGBT-modules Diode, Wechselrichter / Diode, Inverter Hchstzulssige Werte / Maximum Rated Values Periodische Spitzensperrspannung T = 25C V 1200 V vj RRM Repetitive peak reverse voltage Dauergleichstrom I 200 A F Continuous DC forward current Periodischer Spitzenstrom t = 1 ms I 400 A P FRM Repetitive peak forward current Grenzlastintegral V = 0 V, t = 10 ms, T = 125C 7800 As R P vj It It - value VR = 0 V, tP = 10 ms, Tvj = 150C 7400 As Charakteristische Werte / Characteristic Values min. typ. max. Durchlassspannung I = 200 A, V = 0 V T = 25C 1,65 2,15 V F GE vj Forward voltage I = 200 A, V = 0 V T = 125C V 1,65 V F GE vj F IF = 200 A, VGE = 0 V Tvj = 150C 1,65 V Rckstromspitze I = 200 A, - di /dt = 4000 A/s (T =150C) T = 25C 230 A F F vj vj Peak reverse recovery current V = 600 V T = 125C I 250 A R vj RM VGE = -15 V Tvj = 150C 260 A Sperrverzgerungsladung I = 200 A, - di /dt = 4000 A/s (T =150C) T = 25C 20,0 C F F vj vj Recovered charge V = 600 V T = 125C Q 32,0 C R vj r VGE = -15 V Tvj = 150C 45,0 C Abschaltenergie pro Puls I = 200 A, - di /dt = 4000 A/s (T =150C) T = 25C 9,00 mJ F F vj vj Reverse recovery energy V = 600 V T = 125C E 16,0 mJ R vj rec VGE = -15 V Tvj = 150C 17,5 mJ Wrmewiderstand, Chip bis Gehuse pro Diode / per diode RthJC 0,20 K/W Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro Diode / per diode R 0,05 K/W thCH Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease Temperatur im Schaltbetrieb Tvj op -40 150 C Temperature under switching conditions prepared by: MK date of publication: 2013-11-04 approved by: WR revision: 3.0 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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