/ Technical Information IGBT- FF200R12KT4 IGBT-modules 62mm C-Serien Modul mit schnellem Trench/Feldstopp IGBT4 und optimierter Emitter Controlled Diode 62mm C-series module with fast trench/fieldstop IGBT4 and optimized Emitter Controlled diode IGBT, / IGBT,Inverter Preliminary Data / Maximum Rated Values T = 25C V 1200 V vj CES Collector-emitter voltage T = 100C, T = 175C I 200 A C vj max C nom Continuous DC collector current TC = 25C, Tvj max = 175C IC 320 A t = 1 ms I 400 A P CRM Repetitive peak collector current T = 25C, T = 175C P 1100 W C vj max tot Total power dissipation VGES +/-20 V Gate-emitter peak voltage / Characteristic Values min. typ. max. I = 200 A, V = 15 V T = 25C 1,75 2,15 V C GE vj Collector-emitter saturation voltage I = 200 A, V = 15 V T = 125C V 2,05 V C GE vj CE sat I = 200 A, V = 15 V T = 150C 2,10 V C GE vj I = 7,60 mA, V = V , T = 25C V 5,2 5,8 6,4 V C CE GE vj GEth Gate threshold voltage VGE = -15 V ... +15 V QG 1,80 C Gate charge T = 25C R 3,8 vj Gint Internal gate resistor f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 14,0 nF Input capacitance f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 0,50 nF vj CE GE res Reverse transfer capacitance - VCE = 1200 V, VGE = 0 V, Tvj = 25C ICES 5,0 mA Collector-emitter cut-off current - V = 0 V, V = 20 V, T = 25C I 400 nA CE GE vj GES Gate-emitter leakage current () I = 200 A, V = 600 V T = 25C 0,16 s C CE vj t d on Turn-on delay time, inductive load VGE = 15 V Tvj = 125C 0,17 s R = 2,4 T = 150C 0,18 s Gon vj () I = 200 A, V = 600 V T = 25C 0,04 s C CE vj t r Rise time, inductive load VGE = 15 V Tvj = 125C 0,045 s R = 2,4 T = 150C 0,50 s Gon vj () I = 200 A, V = 600 V T = 25C 0,45 s C CE vj t d off Turn-off delay time, inductive load VGE = 15 V Tvj = 125C 0,52 s R = 2,4 T = 150C 0,54 s Goff vj () I = 200 A, V = 600 V T = 25C 0,10 s C CE vj t f Fall time, inductive load VGE = 15 V Tvj = 125C 0,16 s R = 2,4 T = 150C 0,16 s Goff vj () I = 200 A, V = 600 V, L = 30 nH T = 25C 10,0 mJ C CE S vj Turn-on energy loss per pulse VGE = 15 V, di/dt = 4000 A/s (Tvj = 150C) Tvj = 125C Eon 15,0 mJ R = 2,4 T = 150C 17,0 mJ Gon vj ( I = 200 A, V = 600 V, L = 30 nH T = 25C 14,0 mJ C CE S vj Turn-off energy loss per pulse VGE = 15 V, du/dt = 4500 V/s (Tvj = 150C)Tvj = 125C Eoff 20,0 mJ R = 2,4 T = 150C 23,0 mJ Goff vj V 15 V, V = 900 V GE CC ISC SC data VCEmax = VCES -LsCE di/dt tP 10 s, Tvj = 150C 800 A IGBT / per IGBT R 0,135 K/W thJC Thermal resistance, junction to case IGBT / per IGBT R 0,034 K/W thCH Thermal resistance, case to heatsink Paste = 1 W/(mK) / grease = 1 W/(mK) T -40 150 C vj op Temperature under switching conditions prepared by: MK date of publication: 2013-11-04 approved by: WR revision: 2.0 1 / Technical Information IGBT- FF200R12KT4 IGBT-modules Preliminary Data , / Diode, Inverter / Maximum Rated Values T = 25C V 1200 V vj RRM Repetitive peak reverse voltage I 200 A F Continuous DC forward current t = 1 ms I 400 A P FRM Repetitive peak forward current I2t- V = 0 V, t = 10 ms, T = 125C 7800 As R P vj It It - value VR = 0 V, tP = 10 ms, Tvj = 150C 7400 As / Characteristic Values min. typ. max. I = 200 A, V = 0 V T = 25C 1,65 2,15 V F GE vj Forward voltage I = 200 A, V = 0 V T = 125C V 1,65 V F GE vj F IF = 200 A, VGE = 0 V Tvj = 150C 1,65 V I = 200 A, - di /dt = 4000 A/s (T =150C) T = 25C 230 A F F vj vj Peak reverse recovery current V = 600 V T = 125C I 250 A R vj RM VGE = -15 V Tvj = 150C 260 A I = 200 A, - di /dt = 4000 A/s (T =150C) T = 25C 20,0 C F F vj vj Recovered charge V = 600 V T = 125C Q 32,0 C R vj r VGE = -15 V Tvj = 150C 45,0 C I = 200 A, - di /dt = 4000 A/s (T =150C) T = 25C 9,00 mJ F F vj vj Reverse recovery energy V = 600 V T = 125C E 16,0 mJ R vj rec VGE = -15 V Tvj = 150C 17,5 mJ / per diode RthJC 0,20 K/W Thermal resistance, junction to case / per diode R 0,05 K/W thCH Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease Tvj op -40 150 C Temperature under switching conditions prepared by: MK date of publication: 2013-11-04 approved by: WR revision: 2.0 2