/ Technical Information IGBT- FF200R17KE3 IGBT-modules 62mm C-Serien Modul mit Trench/Feldstop IGBT und Emitter ControlledDiode 62mm C-series module with trench/fieldstop IGBT and Emitter Controlled diode IGBT, / IGBT,Inverter Preliminary Data / Maximum Rated Values T = 25C V 1700 V vj CES Collector-emitter voltage T = 80C, T = 150C I 200 A C vj max C nom Continuous DC collector current TC = 25C, Tvj max = 150C IC 310 A t = 1 ms I 400 A P CRM Repetitive peak collector current T = 25C, T = 150 P 1250 W C vj max tot Total power dissipation VGES +/-20 V Gate-emitter peak voltage / Characteristic Values min. typ. max. I = 200 A, V = 15 V T = 25C 2,00 2,45 V C GE vj V CE sat Collector-emitter saturation voltage I = 200 A, V = 15 V T = 125C 2,40 V C GE vj IC = 8,00 mA, VCE = VGE, Tvj = 25C VGEth 5,2 5,8 6,4 V Gate threshold voltage V = -15 V ... +15 V Q 2,30 C GE G Gate charge Tvj = 25C RGint 3,8 Internal gate resistor f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 18,0 nF vj CE GE ies Input capacitance f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 0,60 nF Reverse transfer capacitance - V = 1700 V, V = 0 V, T = 25C I 3,0 mA CE GE vj CES Collector-emitter cut-off current - V = 0 V, V = 20 V, T = 25C I 400 nA CE GE vj GES Gate-emitter leakage current () IC = 200 A, VCE = 900 V Tvj = 25C 0,28 s t d on Turn-on delay time, inductive load V = 15 V T = 125C 0,30 s GE vj RGon = 6,8 () IC = 200 A, VCE = 900 V Tvj = 25C 0,08 s t r Rise time, inductive load V = 15 V T = 125C 0,10 s GE vj RGon = 6,8 () IC = 200 A, VCE = 900 V Tvj = 25C 0,80 s t d off Turn-off delay time, inductive load V = 15 V T = 125C 1,00 s GE vj RGoff = 6,8 () IC = 200 A, VCE = 900 V Tvj = 25C 0,12 s t f Fall time, inductive load V = 15 V T = 125C 0,20 s GE vj RGoff = 6,8 () IC = 200 A, VCE = 900 V, LS = 60 nH Tvj = 25C 58,0 mJ Turn-on energy loss per pulse V = 15 V T = 125C E 78,0 mJ GE vj on RGon = 6,8 ( IC = 200 A, VCE = 900 V, LS = 60 nH Tvj = 25C 43,0 mJ Turn-off energy loss per pulse V = 15 V T = 125C E 63,0 mJ GE vj off RGoff = 6,8 VGE 15 V, VCC = 1000 V I SC SC data V = V -L di/dt t 10 s, T = 125C 800 A CEmax CES sCE P vj IGBT / per IGBT R 0,10 K/W thJC Thermal resistance, junction to case IGBT / per IGBT R 0,033 K/W thCH Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease T -40 125 C vj op Temperature under switching conditions prepared by: HS date of publication: 2013-10-03 approved by: WR revision: 2.1 1 / Technical Information IGBT- FF200R17KE3 IGBT-modules Preliminary Data , / Diode, Inverter / Maximum Rated Values T = 25C V 1700 V vj RRM Repetitive peak reverse voltage I 200 A F Continuous DC forward current t = 1 ms I 400 A P FRM Repetitive peak forward current I2t- V = 0 V, t = 10 ms, T = 125C It 6600 As R P vj It - value / Characteristic Values min. typ. max. I = 200 A, V = 0 V T = 25C 1,80 2,20 V F GE vj VF Forward voltage I = 200 A, V = 0 V T = 125C 1,90 V F GE vj I = 200 A, - di /dt = 2700 A/s (T =125C) T = 25C 210 A F F vj vj Peak reverse recovery current V = 900 V T = 125C I 230 A R vj RM V = -15 V GE I = 200 A, - di /dt = 2700 A/s (T =125C) T = 25C 51,0 C F F vj vj Recovered charge V = 900 V T = 125C Q 85,0 C R vj r V = -15 V GE I = 200 A, - di /dt = 2700 A/s (T =125C) T = 25C 25,0 mJ F F vj vj Reverse recovery energy V = 900 V T = 125C E 48,0 mJ R vj rec V = -15 V GE / per diode R 0,16 K/W thJC Thermal resistance, junction to case / per diode RthCH 0,052 K/W Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease T -40 125 C vj op Temperature under switching conditions prepared by: HS date of publication: 2013-10-03 approved by: WR revision: 2.1 2