Technische Information / Technical Information IGBT-Module FF200R12MT4 IGBT-modules EconoDUAL2 Modul mit schnellem Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode und NTC EconoDUAL2 module with fast Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC Vorlufige Daten / Preliminary Data VCES = 1200V I = 200A / I = 400A C nom CRM Typische Anwendungen Typical Applications Motorantriebe Motor Drives USV-Systeme UPS Systems Elektrische Eigenschaften Electrical Features Erweiterte Sperrschichttemperatur T Extended Operation Temperature T vj op vj op Hohe Stromdichte High Current Density Niedrige Schaltverluste Low Switching Losses V mit positivem Temperaturkoeffizienten V with positive Temperature Coefficient CEsat CEsat Niedriges V Low V CEsat CEsat Mechanische Eigenschaften Mechanical Features Isolierte Bodenplatte Isolated Base Plate Standardgehuse Standard Housing Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 prepared by: MK date of publication: 2013-10-29 approved by: MK revision: 2.5 1Technische Information / Technical Information IGBT-Module FF200R12MT4 IGBT-modules Vorlufige Daten Preliminary Data IGBT,Wechselrichter / IGBT,Inverter Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25C V 1200 V vj CES Collector-emitter voltage Kollektor-Dauergleichstrom T = 100C, T = 175C I 200 A C vj max C nom Continuous DC collector current TC = 25C, Tvj max = 175C IC 295 A Periodischer Kollektor-Spitzenstrom t = 1 ms I 400 A P CRM Repetitive peak collector current Gesamt-Verlustleistung T = 25C, T = 175 P 1050 W C vj max tot Total power dissipation Gate-Emitter-Spitzenspannung VGES +/-20 V Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung I = 200 A, V = 15 V T = 25C 1,75 2,15 V C GE vj Collector-emitter saturation voltage I = 200 A, V = 15 V T = 125C V 2,05 V C GE vj CE sat I = 200 A, V = 15 V T = 150C 2,10 V C GE vj Gate-Schwellenspannung I = 7,60 mA, V = V , T = 25C V 5,2 5,8 6,4 V C CE GE vj GEth Gate threshold voltage Gateladung VGE = -15 V ... +15 V QG 1,65 C Gate charge Interner Gatewiderstand T = 25C R 3,8 vj Gint Internal gate resistor Eingangskapazitt f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 14,0 nF Input capacitance Rckwirkungskapazitt f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 0,50 nF vj CE GE res Reverse transfer capacitance Kollektor-Emitter-Reststrom VCE = 1200 V, VGE = 0 V, Tvj = 25C ICES 1,0 mA Collector-emitter cut-off current Gate-Emitter-Reststrom V = 0 V, V = 20 V, T = 25C I 400 nA CE GE vj GES Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last I = 200 A, V = 600 V T = 25C 0,14 s C CE vj t d on Turn-on delay time, inductive load VGE = 15 V Tvj = 125C 0,15 s R = 0,91 T = 150C 0,15 s Gon vj Anstiegszeit, induktive Last I = 200 A, V = 600 V T = 25C 0,03 s C CE vj t r Rise time, inductive load VGE = 15 V Tvj = 125C 0,035 s R = 0,91 T = 150C 0,04 s Gon vj Abschaltverzgerungszeit, induktive Last I = 200 A, V = 600 V T = 25C 0,32 s C CE vj t d off Turn-off delay time, inductive load VGE = 15 V Tvj = 125C 0,40 s R = 0,91 T = 150C 0,42 s Goff vj Fallzeit, induktive Last I = 200 A, V = 600 V T = 25C 0,09 s C CE vj t f Fall time, inductive load VGE = 15 V Tvj = 125C 0,16 s R = 0,91 T = 150C 0,18 s Goff vj Einschaltverlustenergie pro Puls I = 200 A, V = 600 V, L = 30 nH T = 25C 10,5 mJ C CE S vj Turn-on energy loss per pulse VGE = 15 V, di/dt = 5400 A/s (Tvj = 150C) Tvj = 125C Eon 18,5 mJ R = 0,91 T = 150C 20,5 mJ Gon vj Abschaltverlustenergie pro Puls I = 200 A, V = 600 V, L = 30 nH T = 25C 11,0 mJ C CE S vj Turn-off energy loss per pulse VGE = 15 V, du/dt = 5000 V/s (Tvj = 150C)Tvj = 125C Eoff 16,5 mJ R = 0,91 T = 150C 18,5 mJ Goff vj Kurzschluverhalten V 15 V, V = 800 V GE CC ISC SC data VCEmax = VCES -LsCE di/dt tP 10 s, Tvj = 150C 800 A Wrmewiderstand, Chip bis Gehuse pro IGBT / per IGBT R 0,14 K/W thJC Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro IGBT / per IGBT R 0,062 K/W thCH Thermal resistance, case to heatsink Paste = 1 W/(mK) / grease = 1 W/(mK) Temperatur im Schaltbetrieb T -40 150 C vj op Temperature under switching conditions prepared by: MK date of publication: 2013-10-29 approved by: MK revision: 2.5 2