/ Technical Information IGBT- FF225R17ME4 B11 IGBT-modules EconoDUAL3 /IGBT4 pressfitNTC EconoDUAL3 module with trench/fieldstop IGBT4 and Emitter Controlled Diode and PressFIT / NTC / Preliminary Data VCES = 1700V I = 225A / I = 450A C nom CRM Typical Applications Motor Drives Servo Drives UPS UPS Systems Wind Turbines Electrical Features VCEsat Low VCEsat T = 150C T = 150C vj op vj op Mechanical Features Standard Housing Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 prepared by: MB date of publication: 2013-11-05 approved by: MK revision: 2.0 1 / Technical Information IGBT- FF225R17ME4 B11 IGBT-modules Preliminary Data IGBT, / IGBT,Inverter / Maximum Rated Values T = 25C V 1700 V vj CES Collector-emitter voltage T = 100C, T = 175C I 225 A C vj max C nom Continuous DC collector current TC = 25C, Tvj max = 175C IC 340 A t = 1 ms I 450 A P CRM Repetitive peak collector current T = 25C, T = 175C P 1500 W C vj max tot Total power dissipation VGES +/-20 V Gate-emitter peak voltage / Characteristic Values min. typ. max. I = 225 A, V = 15 V T = 25C 1,95 2,30 V C GE vj Collector-emitter saturation voltage I = 225 A, V = 15 V T = 125C V 2,35 V C GE vj CE sat I = 225 A, V = 15 V T = 150C 2,45 V C GE vj I = 9,00 mA, V = V , T = 25C V 5,2 5,8 6,4 V C CE GE vj GEth Gate threshold voltage VGE = -15 V ... +15 V QG 2,35 C Gate charge T = 25C R 2,8 vj Gint Internal gate resistor f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 18,5 nF Input capacitance f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 0,60 nF vj CE GE res Reverse transfer capacitance - VCE = 1700 V, VGE = 0 V, Tvj = 25C ICES 3,0 mA Collector-emitter cut-off current - V = 0 V, V = 20 V, T = 25C I 400 nA CE GE vj GES Gate-emitter leakage current () I = 225 A, V = 900 V T = 25C 0,22 s C CE vj t d on Turn-on delay time, inductive load VGE = 15 V Tvj = 125C 0,25 s R = 3,3 T = 150C 0,26 s Gon vj () I = 225 A, V = 900 V T = 25C 0,08 s C CE vj t r Rise time, inductive load VGE = 15 V Tvj = 125C 0,085 s R = 3,3 T = 150C 0,09 s Gon vj () I = 225 A, V = 900 V T = 25C 0,69 s C CE vj t d off Turn-off delay time, inductive load VGE = 15 V Tvj = 125C 0,84 s R = 6,2 T = 150C 0,88 s Goff vj () I = 225 A, V = 900 V T = 25C 0,28 s C CE vj t f Fall time, inductive load VGE = 15 V Tvj = 125C 0,54 s R = 6,2 T = 150C 0,62 s Goff vj () I = 225 A, V = 900 V, L = 80 nH T = 25C 51,0 mJ C CE S vj Turn-on energy loss per pulse VGE = 15 V, di/dt = 3100 A/s (Tvj = 150C) Tvj = 125C Eon 67,5 mJ R = 3,3 T = 150C 72,0 mJ Gon vj ( I = 225 A, V = 900 V, L = 80 nH T = 25C 45,5 mJ C CE S vj Turn-off energy loss per pulse VGE = 15 V, du/dt = 3000 V/s (Tvj = 150C)Tvj = 125C Eoff 73,5 mJ R = 6,2 T = 150C 83,5 mJ Goff vj V 15 V, V = 1000 V GE CC ISC SC data VCEmax = VCES -LsCE di/dt tP 10 s, Tvj = 150C 1100 A IGBT / per IGBT R 0,099 K/W thJC Thermal resistance, junction to case IGBT / per IGBT R 0,029 K/W thCH Thermal resistance, case to heatsink Paste = 1 W/(mK) / grease = 1 W/(mK) T -40 150 C vj op Temperature under switching conditions prepared by: MB date of publication: 2013-11-05 approved by: MK revision: 2.0 2