FF225R17ME4P EconoDUAL3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled Diode und NTC / bereits aufgetragenem Thermal Interface Material EconoDUAL3 module with Trench/Fieldstop IGBT4 and Emitter Controlled diode and NTC / pre-applied Thermal Interface Material V = 1700V CES I = 225A / I = 450A C nom CRM Typische Anwendungen Typical Applications Motorantriebe Motor drives Servoumrichter Servo drives USV-Systeme UPS systems Windgeneratoren Wind turbines Elektrische Eigenschaften Electrical Features Niedriges V Low V CEsat CEsat T = 150C T = 150C vj op vj op Mechanische Eigenschaften Mechanical Features Standardgehuse Standard housing Thermisches Interface Material bereits Pre-applied Thermal Interface Material aufgetragen Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 Datasheet Please read the Important Notice and Warnings at the end of this document V 3.0 www.infineon.com 2017-08-07FF225R17ME4P IGBT,Wechselrichter / IGBT,Inverter Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25C V 1700 V vj CES Collector-emitter voltage Kollektor-Dauergleichstrom TH = 70C, Tvj max = 175C IC nom 225 A Continuous DC collector current Periodischer Kollektor-Spitzenstrom t = 1 ms I 450 A P CRM Repetitive peak collector current Gate-Emitter-Spitzenspannung VGES +/-20 V Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung IC = 225 A, VGE = 15 V Tvj = 25C 1,95 2,30 V Collector-emitter saturation voltage I = 225 A, V = 15 V T = 125C V 2,35 V C GE vj CE sat IC = 225 A, VGE = 15 V Tvj = 150C 2,45 V Gate-Schwellenspannung IC = 9,00 mA, VCE = VGE, Tvj = 25C VGEth 5,20 5,80 6,40 V Gate threshold voltage Gateladung V = -15 V ... +15 V Q 2,35 C GE G Gate charge Interner Gatewiderstand Tvj = 25C RGint 2,8 Internal gate resistor Eingangskapazitt f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 18,5 nF vj CE GE ies Input capacitance Rckwirkungskapazitt f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 0,60 nF Reverse transfer capacitance Kollektor-Emitter-Reststrom V = 1700 V, V = 0 V, T = 25C I 3,0 mA CE GE vj CES Collector-emitter cut-off current Gate-Emitter-Reststrom VCE = 0 V, VGE = 20 V, Tvj = 25C IGES 400 nA Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last IC = 225 A, VCE = 900 V Tvj = 25C 0,22 s t d on Turn-on delay time, inductive load V = 15 V T = 125C 0,25 s GE vj R = 3,3 T = 150C 0,26 s Gon vj Anstiegszeit, induktive Last IC = 225 A, VCE = 900 V Tvj = 25C 0,08 s t r Rise time, inductive load V = 15 V T = 125C 0,085 s GE vj R = 3,3 T = 150C 0,09 s Gon vj Abschaltverzgerungszeit, induktive Last I = 225 A, V = 900 V T = 25C 0,69 s C CE vj t d off Turn-off delay time, inductive load V = 15 V T = 125C 0,84 s GE vj R = 6,2 T = 150C 0,88 s Goff vj Fallzeit, induktive Last I = 225 A, V = 900 V T = 25C 0,28 s C CE vj t f Fall time, inductive load V = 15 V T = 125C 0,54 s GE vj R = 6,2 T = 150C 0,62 s Goff vj Einschaltverlustenergie pro Puls I = 225 A, V = 900 V, L = 35 nH T = 25C 51,0 mJ C CE S vj Turn-on energy loss per pulse V = 15 V, di/dt = 3100 A/s (T = 150C) T = 125C E 67,5 mJ GE vj vj on R = 3,3 T = 150C 72,0 mJ Gon vj Abschaltverlustenergie pro Puls I = 225 A, V = 900 V, L = 35 nH T = 25C 45,5 mJ C CE S vj Turn-off energy loss per pulse V = 15 V, du/dt = 3000 V/s (T = 150C)T = 125C E 73,5 mJ GE vj vj off R = 6,2 T = 150C 83,5 mJ Goff vj Kurzschluverhalten V 15 V, V = 1000 V GE CC I SC SC data V = V -L di/dt t 10 s, T = 150C 1100 A CEmax CES sCE P vj Wrmewiderstand, Chip bis Khlkrper pro IGBT / per IGBT RthJH 0,151 K/W Thermal resistance, junction to heatsink valid with IFX pre-applied thermal interface material Temperatur im Schaltbetrieb T -40 150 C vj op Temperature under switching conditions Datasheet 2 V 3.0 2017-08-07