/ Technical Information IGBT- FF300R06KE3 IGBT-modules 62mm C-Serien Modul mit Trench/Feldstop IGBT3 und Emitter Controlled3 Diode 62mm C-Serien module with trench/fieldstop IGBT3 and Emitter Controlled3 diode IGBT, / IGBT,Inverter / Maximum Rated Values T = 25C V 600 V vj CES Collector-emitter voltage T = 70C, T = 175C I 300 A C vj max C nom Continuous DC collector current TC = 25C, Tvj max = 175C IC 400 A t = 1 ms I 600 A P CRM Repetitive peak collector current T = 25C, T = 175 P 940 W C vj max tot Total power dissipation VGES +/-20 V Gate-emitter peak voltage / Characteristic Values min. typ. max. I = 300 A, V = 15 V T = 25C 1,45 1,90 V C GE vj Collector-emitter saturation voltage I = 300 A, V = 15 V T = 125C V 1,60 V C GE vj CE sat I = 300 A, V = 15 V T = 150C 1,70 V C GE vj I = 4,80 mA, V = V , T = 25C V 4,9 5,8 6,5 V C CE GE vj GEth Gate threshold voltage VGE = -15 V ... +15 V QG 3,20 C Gate charge T = 25C R 1,0 vj Gint Internal gate resistor f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 19,0 nF Input capacitance f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 0,57 nF vj CE GE res Reverse transfer capacitance - VCE = 600 V, VGE = 0 V, Tvj = 25C ICES 5,0 mA Collector-emitter cut-off current - V = 0 V, V = 20 V, T = 25C I 400 nA CE GE vj GES Gate-emitter leakage current () I = 300 A, V = 300 V T = 25C 0,11 s C CE vj t d on Turn-on delay time, inductive load VGE = 15 V Tvj = 125C 0,12 s R = 2,4 T = 150C 0,13 s Gon vj () I = 300 A, V = 300 V T = 25C 0,05 s C CE vj t r Rise time, inductive load VGE = 15 V Tvj = 125C 0,06 s R = 2,4 T = 150C 0,06 s Gon vj () I = 300 A, V = 300 V T = 25C 0,49 s C CE vj t d off Turn-off delay time, inductive load VGE = 15 V Tvj = 125C 0,52 s R = 2,4 T = 150C 0,53 s Goff vj () I = 300 A, V = 300 V T = 25C 0,05 s C CE vj t f Fall time, inductive load VGE = 15 V Tvj = 125C 0,07 s R = 2,4 T = 150C 0,07 s Goff vj () I = 300 A, V = 300 V, L = 30 nH T = 25C mJ C CE S vj Turn-on energy loss per pulse VGE = 15 V, di/dt = 6500 A/s (Tvj = 150C) Tvj = 125C Eon 3,10 mJ R = 2,4 T = 150C 3,30 mJ Gon vj ( I = 300 A, V = 300 V, L = 30 nH T = 25C mJ C CE S vj Turn-off energy loss per pulse VGE = 15 V, du/dt = 4000 V/s (Tvj = 150C)Tvj = 125C Eoff 12,0 mJ R = 2,4 T = 150C 12,5 mJ Goff vj V 15 V, V = 360 V t 8 s, T = 25C 2100 A GE CC P vj ISC SC data VCEmax = VCES -LsCE di/dt tP 6 s, Tvj = 150C 1500 A IGBT / per IGBT R 0,16 K/W thJC Thermal resistance, junction to case IGBT / per IGBT R 0,03 K/W thCH Thermal resistance, case to heatsink Paste = 1 W/(mK) / grease = 1 W/(mK) T -40 150 C vj op Temperature under switching conditions prepared by: MK date of publication: 2013-10-03 approved by: WR revision: 3.0 1 / Technical Information IGBT- FF300R06KE3 IGBT-modules , / Diode, Inverter / Maximum Rated Values T = 25C V 600 V vj RRM Repetitive peak reverse voltage I 300 A F Continuous DC forward current t = 1 ms I 600 A P FRM Repetitive peak forward current I2t- V = 0 V, t = 10 ms, T = 125C 8400 As R P vj It It - value VR = 0 V, tP = 10 ms, Tvj = 150C 7900 As / Characteristic Values min. typ. max. I = 300 A, V = 0 V T = 25C 1,55 1,95 V F GE vj Forward voltage I = 300 A, V = 0 V T = 125C V 1,50 V F GE vj F IF = 300 A, VGE = 0 V Tvj = 150C 1,45 V I = 300 A, - di /dt = 6500 A/s (T =150C) T = 25C 190 A F F vj vj Peak reverse recovery current V = 300 V T = 125C I 235 A R vj RM VGE = -15 V Tvj = 150C 250 A I = 300 A, - di /dt = 6500 A/s (T =150C) T = 25C 13,0 C F F vj vj Recovered charge V = 300 V T = 125C Q 24,0 C R vj r VGE = -15 V Tvj = 150C 28,0 C I = 300 A, - di /dt = 6500 A/s (T =150C) T = 25C 3,40 mJ F F vj vj Reverse recovery energy V = 300 V T = 125C E 6,20 mJ R vj rec VGE = -15 V Tvj = 150C 7,00 mJ / per diode RthJC 0,32 K/W Thermal resistance, junction to case / per diode R 0,06 K/W thCH Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease Tvj op -40 150 C Temperature under switching conditions prepared by: MK date of publication: 2013-10-03 approved by: WR revision: 3.0 2