X-On Electronics has gained recognition as a prominent supplier of FF300R12MS4 IGBT Modules across the USA, India, Europe, Australia, and various other global locations. FF300R12MS4 IGBT Modules are a product manufactured by Infineon. We provide cost-effective solutions for IGBT Modules, ensuring timely deliveries around the world.

FF300R12MS4 Infineon

FF300R12MS4 electronic component of Infineon
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See Product Specifications
Part No.FF300R12MS4
Manufacturer: Infineon
Category: IGBT Modules
Description: Infineon Technologies IGBT Modules N-CH 1.2KV 370A
Datasheet: FF300R12MS4 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 218.746 ea
Line Total: USD 218.75 
Availability - 5
Ship by Tue. 10 Dec to Thu. 12 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
5
Ship by Tue. 10 Dec to Thu. 12 Dec
MOQ : 1
Multiples : 1
1 : USD 218.746
10 : USD 213.851
20 : USD 205.854

   
Manufacturer
Product Category
Product
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Maximum Operating Temperature
Minimum Operating Temperature
Packaging
Pd - Power Dissipation
Package / Case
Hts Code
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the FF300R12MS4 from our IGBT Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FF300R12MS4 and other electronic components in the IGBT Modules category and beyond.

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/ Technical Information IGBT- FF300R12MS4 IGBT-modules EconoDUAL3 Modul mit schnellem IGBT2 fr hochfrequentes Schalten EconoDUAL3 module with fast IGBT2 for high switching frequency IGBT, / IGBT,Inverter Preliminary Data / Maximum Rated Values T = 25C V 1200 V vj CES Collector-emitter voltage T = 60C, T = 150C I 300 A C vj max C nom Continuous DC collector current TC = 25C, Tvj max = 150C IC 370 A t = 1 ms I 600 A P CRM Repetitive peak collector current T = 25C, T = 150 P 1950 W C vj max tot Total power dissipation VGES +/-20 V Gate-emitter peak voltage / Characteristic Values min. typ. max. I = 300 A, V = 15 V T = 25C 3,20 3,75 V C GE vj V CE sat Collector-emitter saturation voltage I = 300 A, V = 15 V T = 125C 3,85 V C GE vj IC = 12,0 mA, VCE = VGE, Tvj = 25C VGEth 4,5 5,5 6,5 V Gate threshold voltage V = -15 V ... +15 V Q 3,20 C GE G Gate charge Tvj = 25C RGint 1,7 Internal gate resistor f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 20,0 nF vj CE GE ies Input capacitance f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 1,40 nF Reverse transfer capacitance - V = 1200 V, V = 0 V, T = 25C I 5,0 mA CE GE vj CES Collector-emitter cut-off current - V = 0 V, V = 20 V, T = 25C I 400 nA CE GE vj GES Gate-emitter leakage current () IC = 300 A, VCE = 600 V Tvj = 25C 0,10 s t d on Turn-on delay time, inductive load V = 15 V T = 125C 0,11 s GE vj RGon = 2,7 () IC = 300 A, VCE = 600 V Tvj = 25C 0,06 s t r Rise time, inductive load V = 15 V T = 125C 0,07 s GE vj RGon = 2,7 () IC = 300 A, VCE = 600 V Tvj = 25C 0,53 s t d off Turn-off delay time, inductive load V = 15 V T = 125C 0,55 s GE vj RGoff = 2,7 () IC = 300 A, VCE = 600 V Tvj = 25C 0,03 s t f Fall time, inductive load V = 15 V T = 125C 0,04 s GE vj RGoff = 2,7 () IC = 300 A, VCE = 600 V, LS = 80 nH Tvj = 25C 17,0 mJ Turn-on energy loss per pulse V = 15 V, di/dt = 5500 A/s T = 125C E 25,0 mJ GE vj on RGon = 2,7 ( IC = 300 A, VCE = 600 V, LS = 80 nH Tvj = 25C 11,0 mJ Turn-off energy loss per pulse V = 15 V, du/dt = 6500 V/s T = 125C E 15,0 mJ GE vj off RGoff = 2,7 VGE 15 V, VCC = 900 V I SC SC data V = V -L di/dt t 10 s, T = 125C 2000 A CEmax CES sCE P vj IGBT / per IGBT R 0,064 K/W thJC Thermal resistance, junction to case IGBT / per IGBT R 0,03 K/W thCH Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease T -40 125 C vj op Temperature under switching conditions prepared by: CU date of publication: 2013-10-03 approved by: MK revision: 2.1 1 / Technical Information IGBT- FF300R12MS4 IGBT-modules Preliminary Data , / Diode, Inverter / Maximum Rated Values T = 25C V 1200 V vj RRM Repetitive peak reverse voltage I 300 A F Continuous DC forward current t = 1 ms I 600 A P FRM Repetitive peak forward current I2t- V = 0 V, t = 10 ms, T = 125C It 22000 As R P vj It - value / Characteristic Values min. typ. max. I = 300 A, V = 0 V T = 25C 2,00 2,55 V F GE vj VF Forward voltage I = 300 A, V = 0 V T = 125C 1,70 V F GE vj I = 300 A, - di /dt = 5500 A/s (T =125C) T = 25C 230 A F F vj vj Peak reverse recovery current V = 600 V T = 125C I 300 A R vj RM V = -15 V GE I = 300 A, - di /dt = 5500 A/s (T =125C) T = 25C 18,0 C F F vj vj Recovered charge V = 600 V T = 125C Q 42,0 C R vj r V = -15 V GE I = 300 A, - di /dt = 5500 A/s (T =125C) T = 25C 7,00 mJ F F vj vj Reverse recovery energy V = 600 V T = 125C E 15,0 mJ R vj rec V = -15 V GE / per diode R 0,10 K/W thJC Thermal resistance, junction to case / per diode RthCH 0,05 K/W Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease T -40 125 C vj op Temperature under switching conditions / NTC-Thermistor / Characteristic Values min. typ. max. T = 25C R 5,00 k C 25 Rated resistance R100 T = 100C, R = 493 R/R -5 5 % C 100 Deviation of R100 T = 25C P 20,0 mW C 25 Power dissipation B- R = R exp B (1/T - 1/(298,15 K)) B 3375 K 2 25 25/50 2 25/50 B-value B- R = R exp B (1/T - 1/(298,15 K)) B 3411 K 2 25 25/80 2 25/80 B-value B- R2 = R25 exp B25/100(1/T2 - 1/(298,15 K)) B25/100 3433 K B-value Specification according to the valid application note. prepared by: CU date of publication: 2013-10-03 approved by: MK revision: 2.1 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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