Technische Information / Technical Information IGBT-Modul FF400R17KE4 E IGBT-Module 62mm C-Serien Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 3 Diode 62mm C-Series module with Trench/Fieldstop IGBT4 and Emitter Controlled 3 diode Vorlufige Daten / Preliminary Data VCES = 1700V I = 400A / I = 800A C nom CRM Typische Anwendungen Typical Applications Hochleistungsumrichter High power converters Motorantriebe Motor drives USV-Systeme UPS systems Windgeneratoren Wind turbines Elektrische Eigenschaften Electrical Features Erweiterte Sperrschichttemperatur T vj op Extended operating temperature Tvj op Niedriges V Low V CEsat CEsat Sehr groe Robustheit Unbeatable robustness V mit positivem Temperaturkoeffizienten V with positive temperature coefficient CEsat CEsat Mechanische Eigenschaften Mechanical Features 4 kV AC 1min Isolationsfestigkeit 4 kV AC 1min insulation Gehuse mit CTI > 400 Package with CTI > 400 Groe Luft- und Kriechstrecken High creepage and clearance distances Isolierte Bodenplatte Isolated base plate Standardgehuse Standard housing Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 prepared by: AKB date of publication: 2016-07-15 approved by: MK revision: V2.0 UL approved (E83335) 1Technische Information / Technical Information IGBT-Modul FF400R17KE4 E IGBT-Module Vorlufige Daten Preliminary Data IGBT,Wechselrichter / IGBT,Inverter Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25C V 1700 V vj CES Collector-emitter voltage Kollektor-Dauergleichstrom T = 95C, T = 175C I 400 A C vj max C nom Continuous DC collector current Periodischer Kollektor-Spitzenstrom t = 1 ms I 800 A P CRM Repetitive peak collector current Gate-Emitter-Spitzenspannung V +/-20 V GES Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung I = 400 A, V = 15 V T = 25C 1,95 2,30 V C GE vj Collector-emitter saturation voltage I = 400 A, V = 15 V T = 125C V 2,35 V C GE vj CE sat IC = 400 A, VGE = 15 V Tvj = 150C 2,45 V Gate-Schwellenspannung IC = 16,0 mA, VCE = VGE, Tvj = 25C VGEth 5,35 5,80 6,25 V Gate threshold voltage Gateladung V = -15 V ... +15 V Q 4,10 C GE G Gate charge Interner Gatewiderstand Tvj = 25C RGint 1,9 Internal gate resistor Eingangskapazitt f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 36,0 nF vj CE GE ies Input capacitance Rckwirkungskapazitt f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 1,15 nF Reverse transfer capacitance Kollektor-Emitter-Reststrom V = 1700 V, V = 0 V, T = 25C I 1,0 mA CE GE vj CES Collector-emitter cut-off current Gate-Emitter-Reststrom VCE = 0 V, VGE = 20 V, Tvj = 25C IGES 400 nA Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last IC = 400 A, VCE = 900 V Tvj = 25C 0,24 s t d on Turn-on delay time, inductive load V = 15 V T = 125C 0,26 s GE vj RGon = 0,82 Tvj = 150C 0,27 s Anstiegszeit, induktive Last IC = 400 A, VCE = 900 V Tvj = 25C 0,04 s t r Rise time, inductive load V = 15 V T = 125C 0,05 s GE vj RGon = 0,82 Tvj = 150C 0,05 s Abschaltverzgerungszeit, induktive Last IC = 400 A, VCE = 900 V Tvj = 25C 0,50 s t d off Turn-off delay time, inductive load V = 15 V T = 125C 0,64 s GE vj RGoff = 0,82 Tvj = 150C 0,68 s Fallzeit, induktive Last IC = 400 A, VCE = 900 V Tvj = 25C 0,09 s t f Fall time, inductive load V = 15 V T = 125C 0,15 s GE vj RGoff = 0,82 Tvj = 150C 0,17 s Einschaltverlustenergie pro Puls IC = 400 A, VCE = 900 V, LS = 35 nH Tvj = 25C 89,0 mJ Turn-on energy loss per pulse V = 15 V, di/dt = 8000 A/s (T = 150C) T = 125C E 125 mJ GE vj vj on RGon = 0,82 Tvj = 150C 140 mJ Abschaltverlustenergie pro Puls IC = 400 A, VCE = 900 V, LS = 35 nH Tvj = 25C 73,0 mJ Turn-off energy loss per pulse V = 15 V, du/dt = 3200 V/s (T = 150C)T = 125C E 120 mJ GE vj vj off RGoff = 0,82 Tvj = 150C 130 mJ Kurzschluverhalten VGE 15 V, VCC = 1000 V I SC SC data V = V -L di/dt t 10 s, T = 150C 1800 A CEmax CES sCE P vj Wrmewiderstand, Chip bis Gehuse pro IGBT / per IGBT RthJC 0,0632 K/W Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro IGBT / per IGBT R 0,0271 K/W thCH Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease Temperatur im Schaltbetrieb T -40 150 C vj op Temperature under switching conditions prepared by: AKB date of publication: 2016-07-15 approved by: MK revision: V2.0 2