/ Technical Information IGBT- FF450R06ME3 IGBT-modules EconoDUAL3 /IGBT3 NTC EconoDUAL3 module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and NTC V = 600V CES I = 450A / I = 900A C nom CRM Typical Applications High Power Converters Motor Drives Servo Drives UPS UPS Systems Wind Turbines Electrical Features IGBT3 Trench IGBT 3 Tvj op = 150C Tvj op = 150C V V with positive Temperature Coefficient CEsat CEsat Mechanical Features High Power Density Isolated Base Plate Standard Housing Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 prepared by: MK date of publication: 2013-10-03 approved by: MK revision: 3.2 UL approved (E83335) 1 / Technical Information IGBT- FF450R06ME3 IGBT-modules IGBT, / IGBT,Inverter / Maximum Rated Values T = 25C V 600 V vj CES Collector-emitter voltage T = 50C, T = 175C I 450 A C vj max C nom Continuous DC collector current TC = 25C, Tvj max = 175C IC 550 A t = 1 ms I 900 A P CRM Repetitive peak collector current T = 25C, T = 175 P 1250 W C vj max tot Total power dissipation VGES +/-20 V Gate-emitter peak voltage / Characteristic Values min. typ. max. I = 450 A, V = 15 V T = 25C 1,45 1,90 V C GE vj Collector-emitter saturation voltage I = 450 A, V = 15 V T = 125C V 1,60 V C GE vj CE sat I = 450 A, V = 15 V T = 150C 1,70 V C GE vj I = 7,20 mA, V = V , T = 25C V 4,9 5,8 6,5 V C CE GE vj GEth Gate threshold voltage VGE = -15 V ... +15 V QG 4,80 C Gate charge T = 25C R 0,67 vj Gint Internal gate resistor f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 28,0 nF Input capacitance f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 0,85 nF vj CE GE res Reverse transfer capacitance - VCE = 600 V, VGE = 0 V, Tvj = 25C ICES 5,0 mA Collector-emitter cut-off current - V = 0 V, V = 20 V, T = 25C I 400 nA CE GE vj GES Gate-emitter leakage current () I = 450 A, V = 300 V T = 25C 0,075 s C CE vj t d on Turn-on delay time, inductive load VGE = 15 V Tvj = 125C 0,08 s R = 1,5 T = 150C 0,085 s Gon vj () I = 450 A, V = 300 V T = 25C 0,065 s C CE vj t r Rise time, inductive load VGE = 15 V Tvj = 125C 0,07 s R = 1,5 T = 150C 0,075 s Gon vj () I = 450 A, V = 300 V T = 25C 0,47 s C CE vj t d off Turn-off delay time, inductive load VGE = 15 V Tvj = 125C 0,50 s R = 1,5 T = 150C 0,51 s Goff vj () I = 450 A, V = 300 V T = 25C 0,07 s C CE vj t f Fall time, inductive load VGE = 15 V Tvj = 125C 0,095 s R = 1,5 T = 150C 0,10 s Goff vj () I = 450 A, V = 300 V, L = 30 nH T = 25C 4,95 mJ C CE S vj Turn-on energy loss per pulse VGE = 15 V, di/dt = 5900 A/s (Tvj = 150C) Tvj = 125C Eon 6,30 mJ R = 1,5 T = 150C 6,90 mJ Gon vj ( I = 450 A, V = 300 V, L = 30 nH T = 25C 15,0 mJ C CE S vj Turn-off energy loss per pulse VGE = 15 V, du/dt = 2900 V/s (Tvj = 150C)Tvj = 125C Eoff 17,5 mJ R = 1,5 T = 150C 18,5 mJ Goff vj V 15 V, V = 360 V t 8 s, T = 25C 3200 A GE CC P vj ISC SC data VCEmax = VCES -LsCE di/dt tP 6 s, Tvj = 150C 2300 A IGBT / per IGBT R 0,12 K/W thJC Thermal resistance, junction to case IGBT / per IGBT R 0,03 K/W thCH Thermal resistance, case to heatsink Paste = 1 W/(mK) / grease = 1 W/(mK) T -40 150 C vj op Temperature under switching conditions prepared by: MK date of publication: 2013-10-03 approved by: MK revision: 3.2 2