X-On Electronics has gained recognition as a prominent supplier of FF450R12KE4HOSA1 IGBT Modules across the USA, India, Europe, Australia, and various other global locations. FF450R12KE4HOSA1 IGBT Modules are a product manufactured by Infineon. We provide cost-effective solutions for IGBT Modules, ensuring timely deliveries around the world.

FF450R12KE4HOSA1 Infineon

FF450R12KE4HOSA1 electronic component of Infineon
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Part No.FF450R12KE4HOSA1
Manufacturer: Infineon
Category: IGBT Modules
Description: IGBT Modules
High power, three-phase inverter grade IGBT module with fast switching speed.
Datasheet: FF450R12KE4HOSA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 176.358 ea
Line Total: USD 176.36 
Availability - 95
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
356
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 176.358
10 : USD 159.627

95
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 176.358
10 : USD 159.627

11
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 225.875

   
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Transistor Polarity
Dc Collector Current
Collector Emitter Saturation Voltage Vceon
Power Dissipation Pd
Collector Emitter Voltage Vbrceo
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Operating Temperature Min
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We are delighted to provide the FF450R12KE4HOSA1 from our IGBT Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FF450R12KE4HOSA1 and other electronic components in the IGBT Modules category and beyond.

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The FF450R12KE4HOSA1 is an insulated gate bipolar transistor manufactured by Infineon Technologies. It is designed for low-frequency to medium-frequency applications and offers a maximum power dissipation of 450 watts. This fieldstop insulated gate bipolar transistor is housed in an insulated metal substrate (IMS) package, which offers improved thermal management and reliability. It features a maximum drain current of 150 A, a maximum collector-emitter breakdown voltage of 1,200 volts, a switching frequency range of 0 to 20 kHz, and a maximum junction temperature of 110ºC.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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