X-On Electronics has gained recognition as a prominent supplier of FF450R12ME4P_B11 IGBT Modules across the USA, India, Europe, Australia, and various other global locations. FF450R12ME4P_B11 IGBT Modules are a product manufactured by Infineon. We provide cost-effective solutions for IGBT Modules, ensuring timely deliveries around the world.

FF450R12ME4P_B11 Infineon

FF450R12ME4P_B11 electronic component of Infineon
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See Product Specifications
Part No.FF450R12ME4P_B11
Manufacturer: Infineon
Category: IGBT Modules
Description: IGBT Modules MEDIUM POWER ECONO
Datasheet: FF450R12ME4P_B11 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 163.02 ea
Line Total: USD 163.02 
Availability - 3
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 163.02
12 : USD 156.75
30 : USD 156.739
54 : USD 155.386
102 : USD 155.375
252 : USD 155.364
504 : USD 155.353
1002 : USD 155.342
2502 : USD 155.331

   
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We are delighted to provide the FF450R12ME4P_B11 from our IGBT Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FF450R12ME4P_B11 and other electronic components in the IGBT Modules category and beyond.

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FF450R12ME4P B11 EconoDUAL3 /IGBT4HE pressfit EconoDUAL3 module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and PressFIT / pre-applied Thermal Interface Material V = 1200V CES I = 450A / I = 900A C nom CRM Typical Applications Motor drives Servo drives UPS UPS systems Wind turbines Electrical Features V Low V CEsat CEsat T = 150C T = 150C vj op vj op Mechanical Features PressFIT PressFIT contact technology Standard housing Pre-applied Thermal Interface Material Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 Datasheet Please read the Important Notice and Warnings at the end of this document V 3.0 www.infineon.com 2017-04-03FF450R12ME4P B11 IGBT, / IGBT,Inverter / Maximum Rated Values T = 25C V 1200 V vj CES Collector-emitter voltage TH = 55C, Tvj max = 175C IC nom 450 A Continuous DC collector current t = 1 ms I 900 A P CRM Repetitive peak collector current VGES +/-20 V Gate-emitter peak voltage / Characteristic Values min. typ. max. IC = 450 A, VGE = 15 V Tvj = 25C 1,75 2,10 V Collector-emitter saturation voltage I = 450 A, V = 15 V T = 125C V 2,00 V C GE vj CE sat IC = 450 A, VGE = 15 V Tvj = 150C 2,05 V IC = 17,0 mA, VCE = VGE, Tvj = 25C VGEth 5,20 5,80 6,40 V Gate threshold voltage V = -15 V ... +15 V Q 3,30 C GE G Gate charge Tvj = 25C RGint 1,7 Internal gate resistor f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 28,0 nF vj CE GE ies Input capacitance f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 1,55 nF Reverse transfer capacitance - V = 1200 V, V = 0 V, T = 25C I 3,0 mA CE GE vj CES Collector-emitter cut-off current - VCE = 0 V, VGE = 20 V, Tvj = 25C IGES 400 nA Gate-emitter leakage current () IC = 450 A, VCE = 600 V Tvj = 25C 0,19 s t d on Turn-on delay time, inductive load V = 15 V T = 125C 0,22 s GE vj R = 1,3 T = 150C 0,22 s Gon vj () IC = 450 A, VCE = 600 V Tvj = 25C 0,06 s t r Rise time, inductive load V = 15 V T = 125C 0,07 s GE vj R = 1,3 T = 150C 0,07 s Gon vj () I = 450 A, V = 600 V T = 25C 0,49 s C CE vj t d off Turn-off delay time, inductive load V = 15 V T = 125C 0,58 s GE vj R = 1,3 T = 150C 0,62 s Goff vj () I = 450 A, V = 600 V T = 25C 0,08 s C CE vj t f Fall time, inductive load V = 15 V T = 125C 0,11 s GE vj R = 1,3 T = 150C 0,12 s Goff vj () I = 450 A, V = 600 V, L = 35 nH T = 25C 15,0 mJ C CE S vj Turn-on energy loss per pulse V = 15 V, di/dt = 7000 A/s (T = 150C) T = 125C E 26,0 mJ GE vj vj on R = 1,3 T = 150C 28,5 mJ Gon vj ( I = 450 A, V = 600 V, L = 35 nH T = 25C 38,0 mJ C CE S vj Turn-off energy loss per pulse V = 15 V, du/dt = 3100 V/s (T = 150C)T = 125C E 55,5 mJ GE vj vj off R = 1,3 T = 150C 61,5 mJ Goff vj V 15 V, V = 800 V GE CC I SC SC data V = V -L di/dt t 10 s, T = 150C 1800 A CEmax CES sCE P vj IGBT / per IGBT RthJH 0,104 K/W Thermal resistance, junction to heatsink valid with IFX pre-applied thermal interface material T -40 150 C vj op Temperature under switching conditions Datasheet 2 V 3.0 2017-04-03

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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