FF450R33T3E3 B5 XHP3 Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode XHP3 module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode V = 3300V CES I = 450A / I = 900A C nom CRM Potentielle Anwendungen Potential Applications Mittelspannungsantriebe Medium voltage converters Motorantriebe Motor drives Traktionsumrichter Traction drives Elektrische Eigenschaften Electrical Features Groe DC-Festigkeit High DC stability Hohe Kurzschlussrobustheit High short-circuit capability Niedrige Schaltverluste Low switching losses Niedriges V Low V CEsat CEsat Sehr groe Robustheit Unbeatable robustness Tvj op = 150C Tvj op = 150C Mechanische Eigenschaften Mechanical Features AlSiC Bodenplatte fr erhhte thermische AlSiC base plate for increased thermal cycling Lastwechselfestigkeit capability Gehuse mit CTI > 600 Package with CTI > 600 Gehuse mit erweiterten Package with enhanced insulation of 10.4kV AC Isolationseigenschaften von 10,4kV AC 10s 10s Isolierte Bodenplatte Isolated base plate Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 Datasheet Please read the Important Notice and Warnings at the end of this document V 3.0 www.infineon.com 2019-01-28FF450R33T3E3 B5 IGBT,Wechselrichter / IGBT,Inverter Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung Tvj = -40C 3300 V V CES Collector-emitter voltage T = 150C 3300 vj Kollektor-Dauergleichstrom TC = 100C, Tvj max = 150C ICDC 450 A Continuous DC collector current Periodischer Kollektor-Spitzenstrom t = 1 ms I 900 A P CRM Repetitive peak collector current Gate-Emitter-Spitzenspannung VGES +/-20 V Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung IC = 450 A Tvj = 25C 2,50 2,75 V Collector-emitter saturation voltage V = 15 V T = 125C V 2,90 V GE vj CE sat Tvj = 150C 3,00 3,30 V Gate-Schwellenspannung IC = 12,0 mA, VCE = VGE, Tvj = 25C VGEth 5,20 5,80 6,40 V Gate threshold voltage Gateladung V = -15 / 15 V, V = 1800 V Q 12,5 C GE CE G Gate charge Interner Gatewiderstand Tvj = 25C RGint 1,3 Internal gate resistor Eingangskapazitt f = 1000 kHz, T = 25C, V = 25 V, V = 0 V C 84,0 nF vj CE GE ies Input capacitance Rckwirkungskapazitt f = 1000 kHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 2,00 nF Reverse transfer capacitance Kollektor-Emitter-Reststrom V = 3300 V, V = 0 V, T = 25C I 5,0 mA CE GE vj CES Collector-emitter cut-off current Gate-Emitter-Reststrom VCE = 0 V, VGE = 20 V, Tvj = 25C IGES 400 nA Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last IC = 450 A, VCE = 1800 V Tvj = 25C 0,53 s t d on Turn-on delay time, inductive load V = -15 / 15 V T = 125C 0,57 s GE vj R = 0,7 T = 150C 0,58 s Gon vj Anstiegszeit, induktive Last IC = 450 A, VCE = 1800 V Tvj = 25C 0,10 s t r Rise time, inductive load V = -15 / 15 V T = 125C 0,13 s GE vj R = 0,7 T = 150C 0,13 s Gon vj Abschaltverzgerungszeit, induktive Last I = 450 A, V = 1800 V T = 25C 1,71 s C CE vj t d off Turn-off delay time, inductive load V = -15 / 15 V T = 125C 1,86 s GE vj R = 3,3 T = 150C 1,92 s Goff vj Fallzeit, induktive Last I = 450 A, V = 1800 V T = 25C 0,13 s C CE vj t f Fall time, inductive load V = -15 / 15 V T = 125C 0,24 s GE vj R = 3,3 T = 150C 0,27 s Goff vj Einschaltverlustenergie pro Puls I = 450 A, V = 1800 V, L = 85 nH T = 25C 500 mJ C CE vj Turn-on energy loss per pulse di/dt = 3650 A/s (T = 150C) T = 125C E 765 mJ vj vj on V = -15 / 15 V, R = 0,7 T = 150C 845 mJ GE Gon vj Abschaltverlustenergie pro Puls I = 450 A, V = 1800 V, L = 85 nH T = 25C 415 mJ C CE vj Turn-off energy loss per pulse du/dt = 2850 V/s (T = 150C) T = 125C E 610 mJ vj vj off V = -15 / 15 V, R = 3,3 T = 150C 670 mJ GE Goff vj Kurzschluverhalten V 15 V, V = 2500 V GE CC I SC SC data V = V -L di/dt t 10 s, T = 150C 1800 A CEmax CES sCE P vj Wrmewiderstand, Chip bis Gehuse pro IGBT / per IGBT RthJC 28,4 K/kW Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro IGBT / per IGBT R 17,4 K/kW thCH Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease Temperatur im Schaltbetrieb Tvj op -40 150 C Temperature under switching conditions Datasheet 2 V 3.0 2019-01-28