FF450R33T3E3 XHP3 Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode XHP3 module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode V = 3300V CES I = 450A / I = 900A C nom CRM Potentielle Anwendungen Potential Applications Mittelspannungsantriebe Medium voltage converters Motorantriebe Motor drives Traktionsumrichter Traction drives USV-Systeme UPS systems Windgeneratoren Wind turbines Elektrische Eigenschaften Electrical Features Groe DC-Festigkeit High DC stability Hohe Kurzschlussrobustheit High short-circuit capability Niedrige Schaltverluste Low switching losses Niedriges VCEsat Low VCEsat Sehr groe Robustheit Unbeatable robustness T = 150C T = 150C vj op vj op V CEsat mit positivem Temperaturkoeffizienten VCEsat with positive temperature coefficient Mechanische Eigenschaften Mechanical Features AlSiC Bodenplatte fr erhhte thermische AlSiC base plate for increased thermal cycling Lastwechselfestigkeit capability Gehuse mit CTI > 600 Package with CTI > 600 Isolierte Bodenplatte Isolated base plate Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 Datasheet Please read the Important Notice and Warnings at the end of this document V 3.1 www.infineon.com 2018-12-13FF450R33T3E3 IGBT,Wechselrichter / IGBT,Inverter Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung Tvj = -40C 3300 V V CES Collector-emitter voltage T = 150C 3300 vj Kollektor-Dauergleichstrom TC = 100C, Tvj max = 150C ICDC 450 A Continuous DC collector current Periodischer Kollektor-Spitzenstrom t = 1 ms I 900 A P CRM Repetitive peak collector current Gate-Emitter-Spitzenspannung VGES +/-20 V Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung IC = 450 A Tvj = 25C 2,50 2,75 V Collector-emitter saturation voltage V = 15 V T = 125C V 2,90 V GE vj CE sat Tvj = 150C 3,00 3,30 V Gate-Schwellenspannung IC = 12,0 mA, VCE = VGE, Tvj = 25C VGEth 5,20 5,80 6,40 V Gate threshold voltage Gateladung V = -15 / 15 V, V = 1800 V Q 12,5 C GE CE G Gate charge Interner Gatewiderstand Tvj = 25C RGint 1,3 Internal gate resistor Eingangskapazitt f = 1000 kHz, T = 25C, V = 25 V, V = 0 V C 84,0 nF vj CE GE ies Input capacitance Rckwirkungskapazitt f = 1000 kHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 2,00 nF Reverse transfer capacitance Kollektor-Emitter-Reststrom V = 3300 V, V = 0 V, T = 25C I 5,0 mA CE GE vj CES Collector-emitter cut-off current Gate-Emitter-Reststrom VCE = 0 V, VGE = 20 V, Tvj = 25C IGES 400 nA Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last IC = 450 A, VCE = 1800 V Tvj = 25C 0,53 s t d on Turn-on delay time, inductive load V = -15 / 15 V T = 125C 0,57 s GE vj R = 0,7 T = 150C 0,58 s Gon vj Anstiegszeit, induktive Last IC = 450 A, VCE = 1800 V Tvj = 25C 0,10 s t r Rise time, inductive load V = -15 / 15 V T = 125C 0,13 s GE vj R = 0,7 T = 150C 0,13 s Gon vj Abschaltverzgerungszeit, induktive Last I = 450 A, V = 1800 V T = 25C 1,71 s C CE vj t d off Turn-off delay time, inductive load V = -15 / 15 V T = 125C 1,86 s GE vj R = 3,3 T = 150C 1,92 s Goff vj Fallzeit, induktive Last I = 450 A, V = 1800 V T = 25C 0,13 s C CE vj t f Fall time, inductive load V = -15 / 15 V T = 125C 0,24 s GE vj R = 3,3 T = 150C 0,27 s Goff vj Einschaltverlustenergie pro Puls I = 450 A, V = 1800 V, L = 85 nH T = 25C 500 mJ C CE vj Turn-on energy loss per pulse di/dt = 3650 A/s (T = 150C) T = 125C E 765 mJ vj vj on V = -15 / 15 V, R = 0,7 T = 150C 845 mJ GE Gon vj Abschaltverlustenergie pro Puls I = 450 A, V = 1800 V, L = 85 nH T = 25C 415 mJ C CE vj Turn-off energy loss per pulse du/dt = 2850 V/s (T = 150C) T = 125C E 610 mJ vj vj off V = -15 / 15 V, R = 3,3 T = 150C 670 mJ GE Goff vj Kurzschluverhalten V 15 V, V = 2500 V GE CC I SC SC data V = V -L di/dt t 10 s, T = 150C 1800 A CEmax CES sCE P vj Wrmewiderstand, Chip bis Gehuse pro IGBT / per IGBT RthJC 28,4 K/kW Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro IGBT / per IGBT R 17,4 K/kW thCH Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease Temperatur im Schaltbetrieb Tvj op -40 150 C Temperature under switching conditions Datasheet 2 V 3.1 2018-12-13