/ Technical Information IGBT- FF600R07ME4 B11 IGBT-modules EconoDUAL3 /IGBT4 pressfitNTC EconoDUAL3 module with trench/fieldstop IGBT4 and Emitter Controlled Diode and PressFIT / NTC V = 650V CES I = 600A / I = 1200A C nom CRM Typical Applications Commercial Agriculture Vehicles Motor Drives Solar Applications UPS UPS Systems Electrical Features 650V Increased blocking voltage capability to 650V Increased DC link Voltage High Short Circuit Capability, Self Limiting Short Circuit Current High Current Density IGBT4 Trench IGBT 4 T = 150C T = 150C vj op vj op High surge current capability Mechanical Features High Power Density NTC Integrated NTC temperature sensor Isolated Base Plate Copper Base Plate PressFIT PressFIT Contact Technology PressFIT Rugged selfacting PressFIT assembly Standard Housing Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 prepared by: KY date of publication: 2013-11-05 approved by: MK revision: 3.0 UL approved (E83335) 1 / Technical Information IGBT- FF600R07ME4 B11 IGBT-modules IGBT, / IGBT,Inverter / Maximum Rated Values T = 25C V 650 V vj CES Collector-emitter voltage T = 60C, T = 175C I 600 A C vj max C nom Continuous DC collector current TC = 25C, Tvj max = 175C IC 700 A t = 1 ms I 1200 A P CRM Repetitive peak collector current T = 25C, T = 175C P 1800 W C vj max tot Total power dissipation VGES +/-20 V Gate-emitter peak voltage / Characteristic Values min. typ. max. I = 600 A, V = 15 V T = 25C 1,55 1,95 V C GE vj Collector-emitter saturation voltage I = 600 A, V = 15 V T = 125C V 1,70 V C GE vj CE sat I = 600 A, V = 15 V T = 150C 1,75 V C GE vj I = 9,60 mA, V = V , T = 25C V 4,9 5,8 6,5 V C CE GE vj GEth Gate threshold voltage VGE = -15 V ... +15 V QG 6,50 C Gate charge T = 25C R 0,67 vj Gint Internal gate resistor f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 37,0 nF Input capacitance f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 1,10 nF vj CE GE res Reverse transfer capacitance - VCE = 650 V, VGE = 0 V, Tvj = 25C ICES 1,0 mA Collector-emitter cut-off current - V = 0 V, V = 20 V, T = 25C I 100 nA CE GE vj GES Gate-emitter leakage current () I = 600 A, V = 300 V T = 25C 0,12 s C CE vj t d on Turn-on delay time, inductive load VGE = 15 V Tvj = 125C 0,13 s R = 1,8 T = 150C 0,13 s Gon vj () I = 600 A, V = 300 V T = 25C 0,12 s C CE vj t r Rise time, inductive load VGE = 15 V Tvj = 125C 0,12 s R = 1,8 T = 150C 0,12 s Gon vj () I = 600 A, V = 300 V T = 25C 0,43 s C CE vj t d off Turn-off delay time, inductive load VGE = 15 V Tvj = 125C 0,46 s R = 0,33 T = 150C 0,46 s Goff vj () I = 600 A, V = 300 V T = 25C 0,08 s C CE vj t f Fall time, inductive load VGE = 15 V Tvj = 125C 0,11 s R = 0,33 T = 150C 0,11 s Goff vj () I = 600 A, V = 300 V, L = 30 nH T = 25C 7,00 mJ C CE S vj Turn-on energy loss per pulse VGE = 15 V, di/dt = 4500 A/s (Tvj = 150C) Tvj = 125C Eon 9,40 mJ R = 1,8 T = 150C 9,70 mJ Gon vj ( I = 600 A, V = 300 V, L = 30 nH T = 25C 35,5 mJ C CE S vj Turn-off energy loss per pulse VGE = 15 V, du/dt = 3200 V/s (Tvj = 150C)Tvj = 125C Eoff 39,5 mJ R = 0,33 T = 150C 40,5 mJ Goff vj V 15 V, V = 360 V GE CC ISC SC data VCEmax = VCES -LsCE di/dt tP 10 s, Tvj = 150C 2700 A IGBT / per IGBT R 0,083 K/W thJC Thermal resistance, junction to case IGBT / per IGBT R 0,04 K/W thCH Thermal resistance, case to heatsink Paste = 1 W/(mK) / grease = 1 W/(mK) T -40 150 C vj op Temperature under switching conditions prepared by: KY date of publication: 2013-11-05 approved by: MK revision: 3.0 2