Technische Information / Technical Information IGBT-Modul FF600R07ME4 B11 IGBT-Module EconoDUAL3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled Diode und PressFIT / NTC EconoDUAL3 module with trench/fieldstop IGBT4 and Emitter Controlled Diode and PressFIT / NTC V = 650V CES I = 600A / I = 1200A C nom CRM Typische Anwendungen Typical Applications Hybrid-Nutzfahrzeuge Commercial Agriculture Vehicles Motorantriebe Motor Drives Solar Anwendungen Solar Applications USV-Systeme UPS Systems Elektrische Eigenschaften Electrical Features Erhhte Sperrspannungsfestigkeit auf 650V Increased blocking voltage capability to 650V Erhhte Zwischenkreisspannung Increased DC link Voltage Hohe Kurzschlussrobustheit, selbstlimitierender High Short Circuit Capability, Self Limiting Short Kurzschlussstrom Circuit Current Hohe Stromdichte High Current Density Trench IGBT 4 Trench IGBT 4 T = 150C T = 150C vj op vj op hohe Stostromfestigkeit High surge current capability Mechanische Eigenschaften Mechanical Features Hohe Leistungsdichte High Power Density Integrierter NTC Temperatur Sensor Integrated NTC temperature sensor Isolierte Bodenplatte Isolated Base Plate Kupferbodenplatte Copper Base Plate PressFIT Verbindungstechnik PressFIT Contact Technology Robuste selbsteinpressende Montage Rugged selfacting PressFIT assembly Standardgehuse Standard Housing Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 prepared by: KY date of publication: 2014-12-15 approved by: KV revision: 3.1 UL approved (E83335) 1Technische Information / Technical Information IGBT-Modul FF600R07ME4 B11 IGBT-Module IGBT,Wechselrichter / IGBT,Inverter Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25C V 650 V vj CES Collector-emitter voltage Kollektor-Dauergleichstrom T = 60C, T = 175C I 600 A C vj max C nom Continuous DC collector current TC = 25C, Tvj max = 175C IC 700 A Periodischer Kollektor-Spitzenstrom t = 1 ms I 1200 A P CRM Repetitive peak collector current Gesamt-Verlustleistung T = 25C, T = 175C P 1800 W C vj max tot Total power dissipation Gate-Emitter-Spitzenspannung VGES +/-20 V Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung I = 600 A, V = 15 V T = 25C 1,55 1,95 V C GE vj Collector-emitter saturation voltage I = 600 A, V = 15 V T = 125C V 1,70 V C GE vj CE sat I = 600 A, V = 15 V T = 150C 1,75 V C GE vj Gate-Schwellenspannung I = 9,60 mA, V = V , T = 25C V 4,90 5,80 6,50 V C CE GE vj GEth Gate threshold voltage Gateladung VGE = -15 V ... +15 V QG 6,50 C Gate charge Interner Gatewiderstand T = 25C R 0,67 vj Gint Internal gate resistor Eingangskapazitt f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 37,0 nF Input capacitance Rckwirkungskapazitt f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 1,10 nF vj CE GE res Reverse transfer capacitance Kollektor-Emitter-Reststrom VCE = 650 V, VGE = 0 V, Tvj = 25C ICES 1,0 mA Collector-emitter cut-off current Gate-Emitter-Reststrom V = 0 V, V = 20 V, T = 25C I 100 nA CE GE vj GES Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last I = 600 A, V = 300 V T = 25C 0,12 s C CE vj t d on Turn-on delay time, inductive load VGE = 15 V Tvj = 125C 0,13 s R = 1,8 T = 150C 0,13 s Gon vj Anstiegszeit, induktive Last I = 600 A, V = 300 V T = 25C 0,12 s C CE vj t r Rise time, inductive load VGE = 15 V Tvj = 125C 0,12 s R = 1,8 T = 150C 0,12 s Gon vj Abschaltverzgerungszeit, induktive Last I = 600 A, V = 300 V T = 25C 0,43 s C CE vj t d off Turn-off delay time, inductive load VGE = 15 V Tvj = 125C 0,46 s R = 0,33 T = 150C 0,46 s Goff vj Fallzeit, induktive Last I = 600 A, V = 300 V T = 25C 0,08 s C CE vj t f Fall time, inductive load VGE = 15 V Tvj = 125C 0,11 s R = 0,33 T = 150C 0,11 s Goff vj Einschaltverlustenergie pro Puls I = 600 A, V = 300 V, L = 30 nH T = 25C 7,00 mJ C CE S vj Turn-on energy loss per pulse VGE = 15 V, di/dt = 4500 A/s (Tvj = 150C) Tvj = 125C Eon 9,40 mJ R = 1,8 T = 150C 9,70 mJ Gon vj Abschaltverlustenergie pro Puls I = 600 A, V = 300 V, L = 30 nH T = 25C 35,5 mJ C CE S vj Turn-off energy loss per pulse VGE = 15 V, du/dt = 3200 V/s (Tvj = 150C)Tvj = 125C Eoff 39,5 mJ R = 0,33 T = 150C 40,5 mJ Goff vj Kurzschluverhalten V 15 V, V = 360 V GE CC ISC SC data VCEmax = VCES -LsCE di/dt tP 10 s, Tvj = 150C 2700 A Wrmewiderstand, Chip bis Gehuse pro IGBT / per IGBT R 0,083 K/W thJC Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro IGBT / per IGBT R 0,04 K/W thCH Thermal resistance, case to heatsink Paste = 1 W/(mK) / grease = 1 W/(mK) Temperatur im Schaltbetrieb T -40 150 C vj op Temperature under switching conditions prepared by: KY date of publication: 2014-12-15 approved by: KV revision: 3.1 2