FF600R07ME4 EconoDUAL3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled Diode und NTC EconoDUAL3 module with Trench/Fieldstop IGBT4 and Emitter Controlled diode and NTC V = 650V CES I = 600A / I = 1200A C nom CRM Potentielle Anwendungen Potential Applications Hybrid-Nutzfahrzeuge Commercial Agriculture Vehicles Motorantriebe Motor drives Solar Anwendungen Solar applications USV-Systeme UPS systems Elektrische Eigenschaften Electrical Features Erhhte Sperrspannungsfestigkeit auf 650V Increased blocking voltage capability up to 650V Erhhte Zwischenkreisspannung Increased DC-link voltage Hohe Kurzschlussrobustheit High short-circuit capability Hohe Stostromfestigkeit High surge current capability Hohe Stromdichte High current density T = 150C T = 150C vj op vj op Trench IGBT 4 Trench IGBT 4 Mechanische Eigenschaften Mechanical Features Hohe Leistungsdichte High power density Integrierter NTC Temperatur Sensor Integrated NTC temperature sensor Isolierte Bodenplatte Isolated base plate Kupferbodenplatte Copper base plate Standardgehuse Standard housing Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 Datasheet Please read the Important Notice and Warnings at the end of this document V 3.0 www.infineon.com 2019-08-27FF600R07ME4 IGBT,Wechselrichter / IGBT,Inverter Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25C V 650 V vj CES Collector-emitter voltage Kollektor-Dauergleichstrom TC = 60C, Tvj max = 175C ICDC 600 A Continuous DC collector current Periodischer Kollektor-Spitzenstrom t = 1 ms I 1200 A P CRM Repetitive peak collector current Gate-Emitter-Spitzenspannung VGES +/-20 V Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung IC = 600 A Tvj = 25C 1,55 1,95 V Collector-emitter saturation voltage V = 15 V T = 125C V 1,70 V GE vj CE sat Tvj = 150C 1,75 V Gate-Schwellenspannung IC = 9,60 mA, VCE = VGE, Tvj = 25C VGEth 4,90 5,80 6,50 V Gate threshold voltage Gateladung V = -15 / 15 V Q 6,50 C GE G Gate charge Interner Gatewiderstand Tvj = 25C RGint 0,67 Internal gate resistor Eingangskapazitt f = 1000 kHz, T = 25C, V = 25 V, V = 0 V C 37,0 nF vj CE GE ies Input capacitance Rckwirkungskapazitt f = 1000 kHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 1,10 nF Reverse transfer capacitance Kollektor-Emitter-Reststrom V = 650 V, V = 0 V, T = 25C I 1,0 mA CE GE vj CES Collector-emitter cut-off current Gate-Emitter-Reststrom VCE = 0 V, VGE = 20 V, Tvj = 25C IGES 100 nA Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last IC = 600 A, VCE = 300 V Tvj = 25C 0,12 s t d on Turn-on delay time, inductive load V = -15 / 15 V T = 125C 0,13 s GE vj R = 1,8 T = 150C 0,13 s Gon vj Anstiegszeit, induktive Last IC = 600 A, VCE = 300 V Tvj = 25C 0,12 s t r Rise time, inductive load V = -15 / 15 V T = 125C 0,12 s GE vj R = 1,8 T = 150C 0,12 s Gon vj Abschaltverzgerungszeit, induktive Last I = 600 A, V = 300 V T = 25C 0,43 s C CE vj t d off Turn-off delay time, inductive load V = -15 / 15 V T = 125C 0,46 s GE vj R = 0,33 T = 150C 0,46 s Goff vj Fallzeit, induktive Last I = 600 A, V = 300 V T = 25C 0,08 s C CE vj t f Fall time, inductive load V = -15 / 15 V T = 125C 0,11 s GE vj R = 0,33 T = 150C 0,11 s Goff vj Einschaltverlustenergie pro Puls I = 600 A, V = 300 V, L = 30 nH T = 25C 7,00 mJ C CE vj Turn-on energy loss per pulse di/dt = 4500 A/s (T = 150C) T = 125C E 9,40 mJ vj vj on V = -15 / 15 V, R = 1,8 T = 150C 9,70 mJ GE Gon vj Abschaltverlustenergie pro Puls I = 600 A, V = 300 V, L = 30 nH T = 25C 35,5 mJ C CE vj Turn-off energy loss per pulse du/dt = 3200 V/s (T = 150C) T = 125C E 39,5 mJ vj vj off V = -15 / 15 V, R = 0,33 T = 150C 40,5 mJ GE Goff vj Kurzschluverhalten V 15 V, V = 360 V GE CC I SC SC data V = V -L di/dt t 10 s, T = 150C 2700 A CEmax CES sCE P vj Wrmewiderstand, Chip bis Gehuse pro IGBT / per IGBT RthJC 0,0830 K/W Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro IGBT / per IGBT R 0,0400 K/W thCH Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease Temperatur im Schaltbetrieb Tvj op -40 150 C Temperature under switching conditions Datasheet 2 V 3.0 2019-08-27