/ Technical Information IGBT- FF600R12IS4F IGBT-modules PrimePACK2 IGBT NTC PrimePACK2 module with fast IGBT2 and SiC Diode for high frequency switching and NTC / Preliminary Data VCES = 1200V I = 600A / I = 1200A C nom CRM Typical Applications High Frequency Switching Application Medical Applications Electrical Features Low Switching Losses V V with positive Temperature Coefficient CEsat CEsat Mechanical Features 4 kV 1 4 kV AC 1min Insulation CTI > 400 Package with CTI > 400 High Creepage and Clearance Distances Substrate for Low Thermal Resistance Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 prepared by: GB date of publication: 2013-11-05 approved by: MS revision: 2.5 1 / Technical Information IGBT- FF600R12IS4F IGBT-modules Preliminary Data IGBT, / IGBT,Inverter / Maximum Rated Values T = 25C V 1200 V vj CES Collector-emitter voltage T = 55C, T = 150C I 600 A C vj max C nom Continuous DC collector current t = 1 ms I 1200 A P CRM Repetitive peak collector current T = 25C, T = 150C P 3,70 kW C vj max tot Total power dissipation VGES +/-20 V Gate-emitter peak voltage / Characteristic Values min. typ. max. I = 600 A, V = 15 V T = 25C 3,20 3,75 V C GE vj V CE sat Collector-emitter saturation voltage I = 600 A, V = 15 V T = 125C 3,80 V C GE vj IC = 24,0 mA, VCE = VGE, Tvj = 25C VGEth 4,5 5,5 6,5 V Gate threshold voltage V = -15 V ... +15 V, V = 25V Q 6,30 C GE CE G Gate charge Tvj = 25C RGint 1,3 Internal gate resistor f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 39,0 nF vj CE GE ies Input capacitance f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 2,60 nF Reverse transfer capacitance - V = 1200 V, V = 0 V, T = 25C I 5,0 mA CE GE vj CES Collector-emitter cut-off current - V = 0 V, V = 20 V, T = 25C I 400 nA CE GE vj GES Gate-emitter leakage current () IC = 600 A, VCE = 600 V Tvj = 25C 0,20 s t d on Turn-on delay time, inductive load V = 15 V T = 125C 0,20 s GE vj RGon = 0,5 () IC = 600 A, VCE = 600 V Tvj = 25C 0,06 s t r Rise time, inductive load V = 15 V T = 125C 0,07 s GE vj RGon = 0,5 () IC = 600 A, VCE = 600 V Tvj = 25C 0,53 s t d off Turn-off delay time, inductive load V = 15 V T = 125C 0,55 s GE vj RGoff = 0,5 () IC = 600 A, VCE = 600 V Tvj = 25C 0,07 s t f Fall time, inductive load V = 15 V T = 125C 0,08 s GE vj RGoff = 0,5 () IC = 600 A, VCE = 600 V, LS = 42 nH Tvj = 25C 10,0 mJ Turn-on energy loss per pulse V = 15 V, di/dt = 6800 A/s T = 125C E 20,0 mJ GE vj on RGon = 0,5 ( IC = 600 A, VCE = 600 V, LS = 42 nH Tvj = 25C 35,0 mJ Turn-off energy loss per pulse V = 15 V, du/dt = 5000 V/s T = 125C E 40,0 mJ GE vj off RGoff = 0,5 VGE 15 V, VCC = 900 V I SC SC data V = V -L di/dt t 10 s, T = 125C 3900 A CEmax CES sCE P vj IGBT / per IGBT R 34,0 K/kW thJC Thermal resistance, junction to case IGBT / per IGBT R 13,0 K/kW thCH Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease T -40 125 C vj op Temperature under switching conditions prepared by: GB date of publication: 2013-11-05 approved by: MS revision: 2.5 2