Technische Information / technical information IGBT-Module FF600R12KE3 IGBT-Modules vorlufige Daten preliminary data Hchstzulssige Werte / maximum rated values Elektrische Eigenschaften / electrical properties Kollektor Emitter Sperrspannung T = 25C V 1200 V vj CES collector emitter voltage 600 A I Kollektor Dauergleichstrom T = 80C c C, nom DC collector current T = 25C I 850 A c C Periodischer Kollektor Spitzenstrom t = 1ms, T = 80C I 1200 A p c CRM repetitive peak collector current Gesamt Verlustleistung T = 25C Transistor P 2,8 kW c tot total power dissipation Gate Emitter Spitzenspannung V +/- 20 V GES gate emitter peak voltage Dauergleichstrom I 600 A F DC forward current Periodischer Spitzenstrom t = 1ms I 1200 A p FRM repetitive peak forward current Grenzlastintegral V = 0V, t = 10ms, T = 125C It 75 k As R p vj It value Isolations Prfspannung RMS, f= 50Hz, t= 1min. V 2,5 kV ISOL insulation test voltage Charakteristische Werte / characteristic values Transistor Wechselrichter / transistor inverter min. typ. max. I = 600A, V = 15V, T = 25C, C GE vj - 1,7 2,15 V Kollektor Emitter Sttigungsspannung V CEsat collector emitter satration voltage I = 600A, V = 15V, T = 125C, - 2 t.b.d. V C GE vj Gate Schwellenspannung I = 24mA, V = V , T = 25C, V 5 5,8 6,5 V C CE GE vj GE(th) gate threshold voltage Gateladung V = -15V...+15V V ...V Q - 5,8 - C GE CE= G gate charge Eingangskapazitt f= 1MHz, T = 25C, V = 25V, V = 0V C - 43 - nF vj CE GE ies input capacitance Rckwirkungskapazitt f= 1MHz, T = 25C, V = 25V, V = 0V C - 2 - nF vj CE GE res reverse transfer capacitance Kollektor Emitter Reststrom V = 0V, T = 25C, V = 1200V I - - 5 mA GE vj CE CES collector emitter cut off current Gate Emitter Reststrom V = 0V, V = 20V, T = 25C I - - 400 nA CE GE vj GES gate emitter leakage current prepared by: MOD-D2 Mark Mnzer date of publication: 2002-07-30 approved: SM TM Christoph Lbke revision: 2.0 DB FF600R12KE3 2.0.xls 2002-07-30 1 (8)Technische Information / technical information IGBT-Module FF600R12KE3 IGBT-Modules vorlufige Daten preliminary data Charakteristische Werte / characteristic values Transistor Wechselrichter / transistor inverter min. typ. max. I = 600A, V = 600V C CC Einschaltverzgerungszeit (ind. Last) V =15V, R =3,6 T =25C t GE Gon vj d,on - 0,60 - s turn on delay time (inductive load) V =15V, R =3,6 , T = 125C - 0,66 - s GE Gon vj I = 600A, V = 600V C CC Anstiegszeit (induktive Last) V =15V, R =3,6 T =25C t GE Gon vj r - 0,23 - s rise time (inductive load) V =15V, R =3,6 , T = 125C GE Gon vj - 0,22 - s I = 600A, V = 600V C CC Abschaltverzgerungszeit (ind. Last) V =15V, R =1,2 , T =25C t - 0,82 - s GE Goff vj d,off turn off delay time (inductive load) V =15V, R =1,2 , T = 125C GE Goff vj - 0,96 - s I = 600A, V = 600V C CC Fallzeit (induktive Last) V =15V, R =1,2 , T =25C t - 0,15 - s GE Goff vj f fall time (inductive load) V =15V, R =1,2 , T = 125C GE Goff vj - 0,18 - s I = 600A, V = 600V, L = 120nH C CC Einschaltverlustenergie pro Puls E - 120 - mJ on turn on energy loss per pulse V =15V, R =3,6 , T = 125C GE Gon vj I = 600A, V = 600V, L = 120nH C CC Ausschaltverlustenergie pro Puls E - 95 - mJ off turn off energy loss per pulse V =15V, R =1,2 , T = 125C GE Goff vj t 10s, V 15V, T 125C P GE Vj Kurzschlussverhalten I - 2400 - A SC SC data V = 900V, V = V - L di/dt CC CEmax CES CE Modulindiktivitt L - 20 - nH CE stray inductance module Leitungswiderstand, Anschluss-Chip T = 25C R c CC/EE - 0,18 - m lead resistance, terminal-chip Charakteristische Werte / characteristic values Diode Wechselrichter / diode inverter I = I , V = 0V, T = 25C F C, nom GE vj - 2,0 2,5 V Durchlassspannung V F forward voltage I = I , V = 0V, T = 125C - 1,8 - V F C, nom GE vj I =I , -di /dt= 2400A/s F C,nom F Rckstromspitze I RM - 170 - A V = 600V, V = -15V, T = 25C R GE vj peak reverse recovery current 265 A - - V = 600V, V = -15V, T = 125C R GE vj I =I , -di /dt= 2400A/s F C,nom F Sperrverzgerungsladung Q r - 25 - C V = 600V, V = -15V, T = 25C R GE vj recoverred charge 60 C - - V = 600V, V = -15V, T = 125C R GE vj I =I , -di /dt= 2400A/s F C,nom F Ausschaltenergie pro Puls E 6 mJ rec - - V = 600V, V = -15V, T = 25C R GE vj reverse recovery energy 17 mJ - - V = 600V, V = -15V, T = 125C R GE vj DB FF600R12KE3 2.0.xls 2002-07-30 2 (8)