Technische Information / Technical Information IGBT-Modul FF600R12KE4 E IGBT-Module 62mm C-Serien Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode 62mm C-Series module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode Vorlufige Daten / Preliminary Data VCES = 1200V I = 600A / I = 1200A C nom CRM Typische Anwendungen Typical Applications 3-Level-Applikationen 3-level-applications Hochleistungsumrichter High power converters Multi-Level Umrichter Multi level inverter Solar Anwendungen Solar applications USV-Systeme UPS systems Elektrische Eigenschaften Electrical Features Erweiterte Sperrschichttemperatur T Extended operating temperature T vj op vj op Niedrige Schaltverluste Low switching losses Niedriges V Low V CEsat CEsat Sehr groe Robustheit Unbeatable robustness V mit positivem Temperaturkoeffizienten V with positive temperature coefficient CEsat CEsat Mechanische Eigenschaften Mechanical Features 4 kV AC 1min Isolationsfestigkeit 4 kV AC 1min insulation Gehuse mit CTI > 400 Package with CTI > 400 Groe Luft- und Kriechstrecken High creepage and clearance distances Hohe Leistungsdichte High power density Isolierte Bodenplatte Isolated base plate Standardgehuse Standard housing Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 prepared by: CE date of publication: 2016-06-14 approved by: MK revision: V2.0 UL approved (E83335) 1Technische Information / Technical Information IGBT-Modul FF600R12KE4 E IGBT-Module Vorlufige Daten Preliminary Data IGBT,Wechselrichter / IGBT,Inverter Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25C V 1200 V vj CES Collector-emitter voltage Kollektor-Dauergleichstrom T = 100C, T = 175C I 600 A C vj max C nom Continuous DC collector current Periodischer Kollektor-Spitzenstrom t = 1 ms I 1200 A P CRM Repetitive peak collector current Gate-Emitter-Spitzenspannung V +/-20 V GES Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung I = 600 A, V = 15 V T = 25C 1,75 2,20 V C GE vj Collector-emitter saturation voltage I = 600 A, V = 15 V T = 125C V 2,00 V C GE vj CE sat IC = 600 A, VGE = 15 V Tvj = 150C 2,05 V Gate-Schwellenspannung IC = 23,0 mA, VCE = VGE, Tvj = 25C VGEth 5,25 5,80 6,35 V Gate threshold voltage Gateladung V = -15 V ... +15 V Q 5,00 C GE G Gate charge Interner Gatewiderstand Tvj = 25C RGint 1,3 Internal gate resistor Eingangskapazitt f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 38,0 nF vj CE GE ies Input capacitance Rckwirkungskapazitt f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 1,40 nF Reverse transfer capacitance Kollektor-Emitter-Reststrom V = 1200 V, V = 0 V, T = 25C I 5,0 mA CE GE vj CES Collector-emitter cut-off current Gate-Emitter-Reststrom VCE = 0 V, VGE = 20 V, Tvj = 25C IGES 400 nA Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last IC = 600 A, VCE = 600 V Tvj = 25C 0,17 s t d on Turn-on delay time, inductive load V = 15 V T = 125C 0,18 s GE vj RGon = 0,62 Tvj = 150C 0,18 s Anstiegszeit, induktive Last IC = 600 A, VCE = 600 V Tvj = 25C 0,046 s t r Rise time, inductive load V = 15 V T = 125C 0,048 s GE vj RGon = 0,62 Tvj = 150C 0,052 s Abschaltverzgerungszeit, induktive Last IC = 600 A, VCE = 600 V Tvj = 25C 0,40 s t d off Turn-off delay time, inductive load V = 15 V T = 125C 0,49 s GE vj RGoff = 0,62 Tvj = 150C 0,52 s Fallzeit, induktive Last IC = 600 A, VCE = 600 V Tvj = 25C 0,062 s t f Fall time, inductive load V = 15 V T = 125C 0,098 s GE vj RGoff = 0,62 Tvj = 150C 0,11 s Einschaltverlustenergie pro Puls IC = 600 A, VCE = 600 V, LS = 35 nH Tvj = 25C 16,0 mJ Turn-on energy loss per pulse V = 15 V, di/dt = 11000 A/s (T = 150C)T = 125C E 29,5 mJ GE vj vj on RGon = 0,62 Tvj = 150C 35,5 mJ Abschaltverlustenergie pro Puls IC = 600 A, VCE = 600 V, LS = 35 nH Tvj = 25C 45,5 mJ Turn-off energy loss per pulse V = 15 V, du/dt = 3300 V/s (T = 150C)T = 125C E 70,0 mJ GE vj vj off RGoff = 0,62 Tvj = 150C 78,0 mJ Kurzschluverhalten VGE 15 V, VCC = 800 V I SC SC data V = V -L di/dt t 10 s, T = 150C 2400 A CEmax CES sCE P vj Wrmewiderstand, Chip bis Gehuse pro IGBT / per IGBT RthJC 0,0460 K/W Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro IGBT / per IGBT R 0,0226 K/W thCH Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease Temperatur im Schaltbetrieb T -40 150 C vj op Temperature under switching conditions prepared by: CE date of publication: 2016-06-14 approved by: MK revision: V2.0 2