FF600R12ME4E B11 EconoDUAL3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode und PressFIT / NTC EconoDUAL3 module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and PressFIT / NTC V = 1200V CES I = 600A / I = 1200A C nom CRM Potentielle Anwendungen Potential Applications Hilfsumrichter Auxiliary inverters Motorantriebe Motor drives Solar Anwendungen Solar applications USV-Systeme UPS systems Elektrische Eigenschaften Electrical Features Niedriges V Low V CEsat CEsat T = 150C T = 150C vj op vj op V CEsat mit positivem Temperaturkoeffizienten VCEsat with positive temperature coefficient Mechanische Eigenschaften Mechanical Features Hohe Leistungsdichte High power density Isolierte Bodenplatte Isolated base plate PressFIT Verbindungstechnik PressFIT contact technology Standardgehuse Standard housing Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 Datasheet Please read the Important Notice and Warnings at the end of this document V 3.0 www.infineon.com 2017-12-05FF600R12ME4E B11 IGBT,Wechselrichter / IGBT,Inverter Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25C V 1200 V vj CES Collector-emitter voltage Kollektor-Dauergleichstrom TC = 100C, Tvj max = 175C IC nom 600 A Continuous DC collector current Periodischer Kollektor-Spitzenstrom t = 1 ms I 1200 A P CRM Repetitive peak collector current Gate-Emitter-Spitzenspannung VGES +/-20 V Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung IC = 600 A, VGE = 15 V Tvj = 25C 1,75 2,10 V Collector-emitter saturation voltage I = 600 A, V = 15 V T = 125C V 2,00 V C GE vj CE sat IC = 600 A, VGE = 15 V Tvj = 150C 2,05 V Gate-Schwellenspannung IC = 23,0 mA, VCE = VGE, Tvj = 25C VGEth 5,25 5,80 6,35 V Gate threshold voltage Gateladung V = -15 V ... +15 V Q 4,40 C GE G Gate charge Interner Gatewiderstand Tvj = 25C RGint 1,2 Internal gate resistor Eingangskapazitt f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 37,0 nF vj CE GE ies Input capacitance Rckwirkungskapazitt f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 2,05 nF Reverse transfer capacitance Kollektor-Emitter-Reststrom V = 1200 V, V = 0 V, T = 25C I 3,0 mA CE GE vj CES Collector-emitter cut-off current Gate-Emitter-Reststrom VCE = 0 V, VGE = 20 V, Tvj = 25C IGES 400 nA Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last IC = 600 A, VCE = 400 V Tvj = 25C 0,16 s t d on Turn-on delay time, inductive load V = 15 V T = 125C 0,19 s GE vj R = 1,3 T = 150C 0,19 s Gon vj Anstiegszeit, induktive Last IC = 600 A, VCE = 400 V Tvj = 25C 0,13 s t r Rise time, inductive load V = 15 V T = 125C 0,14 s GE vj R = 1,3 T = 150C 0,15 s Gon vj Abschaltverzgerungszeit, induktive Last I = 600 A, V = 400 V T = 25C 0,40 s C CE vj t d off Turn-off delay time, inductive load V = 15 V T = 125C 0,47 s GE vj R = 1,3 T = 150C 0,51 s Goff vj Fallzeit, induktive Last I = 600 A, V = 400 V T = 25C 0,10 s C CE vj t f Fall time, inductive load V = 15 V T = 125C 0,17 s GE vj R = 1,3 T = 150C 0,19 s Goff vj Einschaltverlustenergie pro Puls I = 600 A, V = 400 V, L = 65 nH T = 25C 36,0 mJ C CE S vj Turn-on energy loss per pulse V = 15 V, di/dt = 3050 A/s (T = 150C) T = 125C E 54,0 mJ GE vj vj on R = 1,3 T = 150C 59,0 mJ Gon vj Abschaltverlustenergie pro Puls I = 600 A, V = 400 V, L = 65 nH T = 25C 38,5 mJ C CE S vj Turn-off energy loss per pulse V = 15 V, du/dt = 2700 V/s (T = 150C)T = 125C E 55,0 mJ GE vj vj off R = 1,3 T = 150C 62,0 mJ Goff vj Kurzschluverhalten V 15 V, V = 800 V GE CC I SC SC data V = V -L di/dt t 10 s, T = 150C 2400 A CEmax CES sCE P vj Wrmewiderstand, Chip bis Gehuse pro IGBT / per IGBT RthJC 0,0473 K/W Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro IGBT / per IGBT R 0,0302 K/W thCH Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease Temperatur im Schaltbetrieb Tvj op -40 150 C Temperature under switching conditions Datasheet 2 V 3.0 2017-12-05