FF600R17ME4 B11 EconoDUAL3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled Diode und PressFIT / NTC EconoDUAL3 module with Trench/Fieldstop IGBT4 and Emitter Controlled diode and PressFIT / NTC V = 1700V CES I = 600A / I = 1200A C nom CRM Typische Anwendungen Typical Applications Hochleistungsumrichter High power converters Windgeneratoren Wind turbines Elektrische Eigenschaften Electrical Features Hohe Stromdichte High current density Niedriges VCEsat Low VCEsat T = 150C T = 150C vj op vj op V mit positivem Temperaturkoeffizienten V with positive temperature coefficient CEsat CEsat Mechanische Eigenschaften Mechanical Features Hohe Leistungsdichte High power density Isolierte Bodenplatte Isolated base plate Standardgehuse Standard housing Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 Datasheet Please read the Important Notice and Warnings at the end of this document V 3.0 www.infineon.com 2016-11-08FF600R17ME4 B11 IGBT,Wechselrichter / IGBT,Inverter Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25C V 1700 V vj CES Collector-emitter voltage Kollektor-Dauergleichstrom T = 108C, T = 175C I 600 A C vj max C nom Continuous DC collector current TC = 25C, Tvj max = 175C IC 950 A Periodischer Kollektor-Spitzenstrom t = 1 ms I 1200 A P CRM Repetitive peak collector current Gate-Emitter-Spitzenspannung VGES +/-20 V Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung IC = 600 A, VGE = 15 V Tvj = 25C 1,95 2,30 V Collector-emitter saturation voltage I = 600 A, V = 15 V T = 125C V 2,35 V C GE vj CE sat IC = 600 A, VGE = 15 V Tvj = 150C 2,45 V Gate-Schwellenspannung IC = 24,0 mA, VCE = VGE, Tvj = 25C VGEth 5,20 5,80 6,40 V Gate threshold voltage Gateladung V = -15 V ... +15 V Q 6,15 C GE G Gate charge Interner Gatewiderstand Tvj = 25C RGint 1,2 Internal gate resistor Eingangskapazitt f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 48,0 nF vj CE GE ies Input capacitance Rckwirkungskapazitt f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 1,55 nF Reverse transfer capacitance Kollektor-Emitter-Reststrom V = 1700 V, V = 0 V, T = 25C I 1,0 mA CE GE vj CES Collector-emitter cut-off current Gate-Emitter-Reststrom VCE = 0 V, VGE = 20 V, Tvj = 25C IGES 100 nA Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last IC = 600 A, VCE = 900 V Tvj = 25C 0,20 s t d on Turn-on delay time, inductive load V = 15 V T = 125C 0,21 s GE vj R = 1,0 T = 150C 0,24 s Gon vj Anstiegszeit, induktive Last IC = 600 A, VCE = 900 V Tvj = 25C 0,07 s t r Rise time, inductive load V = 15 V T = 125C 0,08 s GE vj R = 1,0 T = 150C 0,08 s Gon vj Abschaltverzgerungszeit, induktive Last I = 600 A, V = 900 V T = 25C 0,62 s C CE vj t d off Turn-off delay time, inductive load V = 15 V T = 125C 0,75 s GE vj R = 1,0 T = 150C 0,80 s Goff vj Fallzeit, induktive Last I = 600 A, V = 900 V T = 25C 0,11 s C CE vj t f Fall time, inductive load V = 15 V T = 125C 0,16 s GE vj R = 1,0 T = 150C 0,18 s Goff vj Einschaltverlustenergie pro Puls I = 600 A, V = 900 V, L = 35 nH T = 25C 140 mJ C CE S vj Turn-on energy loss per pulse V = 15 V, di/dt = 6500 A/s (T = 150C) T = 125C E 210 mJ GE vj vj on R = 1,0 T = 150C 225 mJ Gon vj Abschaltverlustenergie pro Puls I = 600 A, V = 900 V, L = 35 nH T = 25C 115 mJ C CE S vj Turn-off energy loss per pulse V = 15 V, du/dt = 3000 V/s (T = 150C)T = 125C E 180 mJ GE vj vj off R = 1,0 T = 150C 205 mJ Goff vj Kurzschluverhalten V 15 V, V = 1000 V t 10 s, T = 25C 3000 A GE CC P vj I SC SC data V = V -L di/dt t 10 s, T = 150C 2300 A CEmax CES sCE P vj Wrmewiderstand, Chip bis Gehuse pro IGBT / per IGBT RthJC 0,0369 K/W Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro IGBT / per IGBT R 0,0328 K/W thCH Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease Temperatur im Schaltbetrieb Tvj op -40 150 C Temperature under switching conditions Datasheet 2 V 3.0 2016-11-08