/ Technical Information IGBT- FF650R17IE4V IGBT-modules PrimePACK2 NTC PrimePACK2 module and NTC / Preliminary Data VCES = 1700V I = 650A / I = 1300A C nom CRM Typical Applications Commercial Agriculture Vehicles Electrical Features T vj op Extended Operation Temperature Tvj op High DC Stability High Current Density Low Switching Losses V Low V CEsat CEsat T = 150C T = 150C vj op vj op Mechanical Features CTI > 400 Package with CTI > 400 High Creepage and Clearance Distances High Power and Thermal Cycling Capability High Power Density Copper Base Plate Standard Housing Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 prepared by: TA date of publication: 2014-04-28 approved by: IB revision: 2.0 1 / Technical Information IGBT- FF650R17IE4V IGBT-modules Preliminary Data IGBT, / IGBT,Inverter / Maximum Rated Values T = 25C V 1700 V vj CES Collector-emitter voltage T = 100C, T = 175C I 650 A C vj max C nom Continuous DC collector current TC = 25C, Tvj max = 175C IC 930 A t = 1 ms I 1300 A P CRM Repetitive peak collector current T = 25C, T = 175C P 4,15 kW C vj max tot Total power dissipation VGES +/-20 V Gate-emitter peak voltage / Characteristic Values min. typ. max. I = 650 A, V = 15 V T = 25C 2,00 2,45 V C GE vj Collector-emitter saturation voltage I = 650 A, V = 15 V T = 125C V 2,35 2,80 V C GE vj CE sat I = 650 A, V = 15 V T = 150C 2,45 V C GE vj I = 24,0 mA, V = V , T = 25C V 5,2 5,8 6,4 V C CE GE vj GEth Gate threshold voltage VGE = -15 V ... +15 V QG 7,00 C Gate charge T = 25C R 2,3 vj Gint Internal gate resistor f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 54,0 nF Input capacitance f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 1,70 nF vj CE GE res Reverse transfer capacitance - VCE = 1700 V, VGE = 0 V, Tvj = 25C ICES 5,0 mA Collector-emitter cut-off current - V = 0 V, V = 20 V, T = 25C I 400 nA CE GE vj GES Gate-emitter leakage current () I = 650 A, V = 900 V T = 25C 0,55 s C CE vj t d on Turn-on delay time, inductive load VGE = 15 V Tvj = 125C 0,60 s R = 1,8 T = 150C 0,60 s Gon vj () I = 650 A, V = 900 V T = 25C 0,09 s C CE vj t r Rise time, inductive load VGE = 15 V Tvj = 125C 0,11 s R = 1,8 T = 150C 0,12 s Gon vj () I = 650 A, V = 900 V T = 25C 1,00 s C CE vj t d off Turn-off delay time, inductive load VGE = 15 V Tvj = 125C 1,25 s R = 2,7 T = 150C 1,30 s Goff vj () I = 650 A, V = 900 V T = 25C 0,29 s C CE vj t f Fall time, inductive load VGE = 15 V Tvj = 125C 0,49 s R = 2,7 T = 150C 0,57 s Goff vj () I = 650 A, V = 900 V, L = 45 nH T = 25C 205 mJ C CE S vj Turn-on energy loss per pulse VGE = 15 V, di/dt = 5000 A/s (Tvj = 150C) Tvj = 125C Eon 300 mJ R = 1,8 T = 150C 320 mJ Gon vj ( I = 650 A, V = 900 V, L = 45 nH T = 25C 140 mJ C CE S vj Turn-off energy loss per pulse VGE = 15 V, du/dt = 3200 V/s (Tvj = 150C)Tvj = 125C Eoff 205 mJ R = 2,7 T = 150C 230 mJ Goff vj V 15 V, V = 1000 V GE CC ISC SC data VCEmax = VCES -LsCE di/dt tP 10 s, Tvj = 150C 2700 A IGBT / per IGBT R 36,0 K/kW thJC Thermal resistance, junction to case IGBT / per IGBT R 14,0 K/kW thCH Thermal resistance, case to heatsink Paste = 1 W/(mK) / grease = 1 W/(mK) T -40 150 C vj op Temperature under switching conditions prepared by: TA date of publication: 2014-04-28 approved by: IB revision: 2.0 2