FF6MR12W2M1P B11 EasyDUAL Modul mit CoolSiC Trench MOSFET und PressFIT / NTC / TIM EasyDUAL module with CoolSiC Trench MOSFET and PressFIT / NTC / TIM Vorlufige Daten / Preliminary Data J V = 1200V DSS I = 200A / I = 400A D nom DRM Potentielle Anwendungen Potential Applications Anwendungen mit hohen Schaltfrequenzen High Frequency Switching application DC/DC Wandler DC/DC converter Solar Anwendungen Solar applications USV-Systeme UPS systems Elektrische Eigenschaften Electrical Features Hohe Stromdichte High current density Niederinduktives Design Low inductive design Niedrige Schaltverluste Low switching losses Mechanische Eigenschaften Mechanical Features Integrierter NTC Temperatur Sensor Integrated NTC temperature sensor PressFIT Verbindungstechnik PressFIT contact technology Robuste Montage durch integrierte Rugged mounting due to integrated mounting Befestigungsklammern clamps Thermisches Interface Material bereits Pre-applied Thermal Interface Material aufgetragen Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 Datasheet Please read the Important Notice and Warnings at the end of this document V 2.0 www.infineon.com 2019-08-01FF6MR12W2M1P B11 Vorlufige Daten Preliminary Data MOSFET / MOSFET Hchstzulssige Werte / Maximum Rated Values Drain-Source-Spannung T = 25C V 1200 V vj DSS Drain-source voltage Drain-Gleichstrom Tvj = 175C, VGS = 15 V TH = 10C ID nom 200 A DC drain current Gepulster Drainstrom verifiziert durch Design, t p limitiert durch Tvjmax I 400 A D pulse Pulsed drain current verified by design, t limited by T p vjmax Gate-Source Spannung VGSS -10 / 20 V Gate-source voltage Charakteristische Werte / Characteristic Values min. typ. max. Einschaltwiderstand ID = 200 A Tvj = 25C 5,63 Drain-source on resistance V = 15 V T = 125C R 7,38 m GS vj DS on Tvj = 150C 8,25 Gate-Schwellenspannung ID = 80,0 mA, V DS = VGS , Tvj = 25C VGS(th) 3,45 4,50 5,55 V Gate threshold voltage (tested after 1ms pulse at V = +20 V) GS Gesamt Gateladung V = -5 V / 15 V, V = 800 V Q 0,496 C GS DS G Total gate charge Interner Gatewiderstand Tvj = 25C RGint 0,5 Internal gate resistor Eingangskapazitt f = 1 MHz, T = 25C vj C 14,7 nF iss Input capacitance VDS = 800 V, VGS = 0 V, VAC = 25 mV Ausgangskapazitt f = 1 MHz, T = 25C vj Coss 0,88 nF Output capacitance V = 800 V, V = 0 V, V = 25 mV DS GS AC Rckwirkungskapazitt f = 1 MHz, T = 25C vj C 0,112 nF rss Reverse transfer capacitance V = 800 V, V = 0 V, V = 25 mV DS GS AC C Speicherenergie T = 25C OSS vj Eoss 352 J C stored energy V = 800 V, V = -5 V / 15 V OSS DS GS Drain-Source-Reststrom V = 1200 V, V = -5 V T = 25C I 0,80 660 A DS GS vj DSS Zero gate voltage drain current Gate-Source-Reststrom V = 0 V V = 20 V 400 DS GS IGSS nA Gate-source leakage current Tvj = 25C VGS = -10 V Einschaltverzgerungszeit, induktive Last ID = 200 A, VDS = 600 V Tvj = 25C 20,4 Turn on delay time, inductive load V = -5 V / 15 V T = 125C t 19,3 ns GS vj d on R = 1,80 T = 150C 18,8 Gon vj Anstiegszeit, induktive Last ID = 200 A, VDS = 600 V Tvj = 25C 18,7 Rise time, inductive load V = -5 V / 15 V T = 125C t 18,0 ns GS vj r R = 1,80 T = 150C 18,0 Gon vj Abschaltverzgerungszeit, induktive Last ID = 200 A, VDS = 600 V Tvj = 25C 62,6 Turn off delay time, inductive load V = -5 V / 15 V T = 125C t 66,0 ns GS vj d off R = 1,80 T = 150C 66,0 Goff vj Fallzeit, induktive Last ID = 200 A, VDS = 600 V Tvj = 25C 30,0 Fall time, inductive load V = -5 V / 15 V T = 125C t 30,5 ns GS vj f R = 1,80 T = 150C 30,5 Goff vj Einschaltverlustenergie pro Puls ID = 200 A, VDS = 600 V, L = 35 nH Tvj = 25C 2,50 Turn-on energy loss per pulse di/dt = 13,0 kA/s (T = 150C) T = 125C E 2,70 mJ vj vj on V = -5 V / 15 V, R = 1,80 T = 150C 2,90 GS Gon vj Abschaltverlustenergie pro Puls ID = 200 A, VDS = 600 V, L = 35 nH Tvj = 25C 1,20 Turn-off energy loss per pulse du/dt = 24,0 kV/s (T = 150C) T = 125C E 1,30 mJ vj vj off V = -5 V / 15 V, R = 1,80 T = 150C 1,30 GS Goff vj Kurzschluverhalten VGS = -5 V / 15 V, VDD = 800 V tP 2 s, Tvj = 25C 1680 A SC data V = V -L di/dt t 2 s, T = 150C I 1640 A DSmax DSS sDS P vj SC R = 10,0 G Wrmewiderstand, Chip bis Khlkrper pro MOSFET / per MOSFET R 0,266 K/W thJH Thermal resistance, junction to heatsink Temperatur im Schaltbetrieb Tvj op -40 150 C Temperature under switching conditions Body Diode / Body diode Hchstzulssige Werte / Maximum Rated Values Body Diode-Gleichstrom T = 175C, V = -5 V T = 10C I 64 A vj GS H SD DC body diode forward current Charakteristische Werte / Characteristic Values min. typ. max. Durchlassspannung I = 200 A, V = -5 V T = 25C 4,60 5,65 SD GS vj Forward voltage I = 200 A, V = -5 V T = 125C V 4,35 V SD GS vj SD ISD = 200 A, VGS = -5 V Tvj = 150C 4,30 Datasheet 2 V 2.0 2019-08-01