TechnischeInformation/TechnicalInformation
IGBT-Module
FF75R12RT4
IGBT-modules
34mmModulmitschnellemTrench/FeldstoppIGBT4undEmitterControlled4Diode
34mmmodulewithfastTrench/FieldstopIGBT4andEmitterControlled4diode
VorlufigeDaten/PreliminaryData
VCES = 1200V
I = 75A / I = 150A
C nom CRM
TypischeAnwendungen TypicalApplications
Hochleistungsumrichter HighPowerConverters
Motorantriebe MotorDrives
USV-Systeme UPSSystems
ElektrischeEigenschaften ElectricalFeatures
ErweiterteSperrschichttemperaturT ExtendedOperationTemperatureT
vjop vjop
NiedrigeSchaltverluste LowSwitchingLosses
NiedrigesV LowV
CEsat CEsat
T =150C T =150C
vjop vjop
V mitpositivemTemperaturkoeffizienten V withpositiveTemperatureCoefficient
CEsat CEsat
MechanischeEigenschaften MechanicalFeatures
IsolierteBodenplatte IsolatedBasePlate
Standardgehuse StandardHousing
ModuleLabelCode
BarcodeCode128 ContentoftheCode Digit
ModuleSerialNumber 1-5
ModuleMaterialNumber 6-11
ProductionOrderNumber 12-19
DMX-Code
Datecode(ProductionYear) 20-21
Datecode(ProductionWeek) 22-23
preparedby:MK dateofpublication:2013-11-05
approvedby:WR revision:2.1
1TechnischeInformation/TechnicalInformation
IGBT-Module
FF75R12RT4
IGBT-modules
VorlufigeDaten
PreliminaryData
IGBT,Wechselrichter/IGBT,Inverter
HchstzulssigeWerte/MaximumRatedValues
Kollektor-Emitter-Sperrspannung
T = 25C V 1200 V
vj CES
Collector-emittervoltage
Kollektor-Dauergleichstrom
T = 100C, T = 175C I 75 A
C vj max C nom
ContinuousDCcollectorcurrent
PeriodischerKollektor-Spitzenstrom
t = 1 ms I 150 A
P CRM
Repetitivepeakcollectorcurrent
Gesamt-Verlustleistung
T = 25C, T = 175C P 395 W
C vj max tot
Totalpowerdissipation
Gate-Emitter-Spitzenspannung
VGES +/-20 V
Gate-emitterpeakvoltage
CharakteristischeWerte/CharacteristicValues min. typ. max.
Kollektor-Emitter-Sttigungsspannung I = 75 A, V = 15 V T = 25C 1,85 2,15 V
C GE vj
Collector-emittersaturationvoltage I = 75 A, V = 15 V T = 125C V 2,15 V
C GE vj CE sat
I = 75 A, V = 15 V T = 150C 2,25 V
C GE vj
Gate-Schwellenspannung
I = 2,40 mA, V = V , T = 25C V 5,2 5,8 6,4 V
C CE GE vj GEth
Gatethresholdvoltage
Gateladung
VGE = -15 V ... +15 V QG 0,57 C
Gatecharge
InternerGatewiderstand
T = 25C R 10
vj Gint
Internalgateresistor
Eingangskapazitt
f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 4,30 nF
Inputcapacitance
Rckwirkungskapazitt
f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 0,25 nF
vj CE GE res
Reversetransfercapacitance
Kollektor-Emitter-Reststrom
VCE = 1200 V, VGE = 0 V, Tvj = 25C ICES 1,0 mA
Collector-emittercut-offcurrent
Gate-Emitter-Reststrom
V = 0 V, V = 20 V, T = 25C I 100 nA
CE GE vj GES
Gate-emitterleakagecurrent
Einschaltverzgerungszeit,induktiveLast I = 75 A, V = 600 V T = 25C 0,13 s
C CE vj
t
d on
Turn-ondelaytime,inductiveload VGE = 15 V Tvj = 125C 0,15 s
R = 2,2 T = 150C 0,15 s
Gon vj
Anstiegszeit,induktiveLast I = 75 A, V = 600 V T = 25C 0,02 s
C CE vj
t
r
Risetime,inductiveload VGE = 15 V Tvj = 125C 0,03 s
R = 2,2 T = 150C 0,035 s
Gon vj
Abschaltverzgerungszeit,induktiveLast I = 75 A, V = 600 V T = 25C 0,30 s
C CE vj
t
d off
Turn-offdelaytime,inductiveload VGE = 15 V Tvj = 125C 0,38 s
R = 2,2 T = 150C 0,40 s
Goff vj
Fallzeit,induktiveLast I = 75 A, V = 600 V T = 25C 0,045 s
C CE vj
t
f
Falltime,inductiveload VGE = 15 V Tvj = 125C 0,08 s
R = 2,2 T = 150C 0,09 s
Goff vj
EinschaltverlustenergieproPuls I = 75 A, V = 600 V, L = 30 nH T = 25C 6,00 mJ
C CE S vj
Turn-onenergylossperpulse VGE = 15 V, di/dt = 1900 A/s (Tvj = 150C) Tvj = 125C Eon 9,50 mJ
R = 2,2 T = 150C 10,5 mJ
Gon vj
AbschaltverlustenergieproPuls I = 75 A, V = 600 V, L = 30 nH T = 25C 4,00 mJ
C CE S vj
Turn-offenergylossperpulse VGE = 15 V, du/dt = 3700 V/s (Tvj = 150C)Tvj = 125C Eoff 6,50 mJ
R = 2,2 T = 150C 7,00 mJ
Goff vj
Kurzschluverhalten V 15 V, V = 800 V
GE CC
ISC
SCdata VCEmax = VCES -LsCE di/dt tP 10 s, Tvj = 150C 270 A
Wrmewiderstand,ChipbisGehuse
proIGBT/perIGBT R 0,38 K/W
thJC
Thermalresistance,junctiontocase
Wrmewiderstand,GehusebisKhlkrper proIGBT/perIGBT
R 0,083 K/W
thCH
Thermalresistance,casetoheatsink Paste=1W/(mK)/grease=1W/(mK)
TemperaturimSchaltbetrieb
T -40 150 C
vj op
Temperatureunderswitchingconditions
preparedby:MK dateofpublication:2013-11-05
approvedby:WR revision:2.1
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