Technische Information / Technical Information IGBT-Module FF800R17KF6C B2 IGBT-modules IHM-A Modul mit low loss IGBT2 and Emitter Controlled Diode IHM-A module with low loss IGBT2 and Emitter Controlled Diode Vorlufige Daten IGBT,Wechselrichter / IGBT,Inverter Preliminary Data Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung Tvj = 25C 1700 V V CES Collector-emitter voltage T = 125C 1700 vj Kollektor-Dauergleichstrom T = 80C, T = 150C I 800 A C vj max C nom Continuous DC collector current TC = 25C, Tvj max = 150C IC 1300 A Periodischer Kollektor-Spitzenstrom t = 1 ms I 1600 A P CRM Repetitive peak collector current Gesamt-Verlustleistung T = 25C, T = 150C P 6,25 kW C vj max tot Total power dissipation Gate-Emitter-Spitzenspannung VGES +/- 20 V Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung I = 800 A, V = 15 V T = 25C 2,60 3,10 V C GE vj V CE sat Collector-emitter saturation voltage I = 800 A, V = 15 V T = 125C 3,10 3,60 V C GE vj Gate-Schwellenspannung IC = 65,0 mA, VCE = VGE, Tvj = 25C VGEth 4,5 5,5 6,5 V Gate threshold voltage Gateladung V = -15 V ... +15 V Q 9,60 C GE G Gate charge Interner Gatewiderstand Tvj = 25C RGint 1,3 Internal gate resistor Eingangskapazitt f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 52,0 nF vj CE GE ies Input capacitance Rckwirkungskapazitt f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 2,70 nF Reverse transfer capacitance Kollektor-Emitter-Reststrom V = 1700 V, V = 0 V, T = 25C I 0,02 1,5 mA CE GE vj CES Collector-emitter cut-off current Gate-Emitter-Reststrom V = 0 V, V = 20 V, T = 25C I 400 nA CE GE vj GES Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last IC = 800 A, VCE = 900 V Tvj = 25C 0,40 s t d on Turn-on delay time, inductive load V = 15 V T = 125C 0,40 s GE vj RGon = 1,2 Anstiegszeit, induktive Last IC = 800 A, VCE = 900 V Tvj = 25C 0,14 s t r Rise time, inductive load V = 15 V T = 125C 0,14 s GE vj RGon = 1,2 Abschaltverzgerungszeit, induktive Last IC = 800 A, VCE = 900 V Tvj = 25C 1,10 s t d off Turn-off delay time, inductive load V = 15 V T = 125C 1,10 s GE vj RGoff = 1,8 Fallzeit, induktive Last IC = 800 A, VCE = 900 V Tvj = 25C 0,13 s t f Fall time, inductive load V = 15 V T = 125C 0,14 s GE vj RGoff = 1,8 Einschaltverlustenergie pro Puls IC = 800 A, VCE = 900 V, LS = 60 nH Tvj = 25C mJ Turn-on energy loss per pulse V = 15 V T = 125C E 290 mJ GE vj on RGon = 1,2 Abschaltverlustenergie pro Puls IC = 800 A, VCE = 900 V, LS = 60 nH Tvj = 25C mJ Turn-off energy loss per pulse V = 15 V T = 125C E 335 mJ GE vj off RGoff = 1,8 Kurzschluverhalten VGE 15 V, VCC = 1000 V I SC SC data V = V -L di/dt t 10 s, T = 125C 3200 A CEmax CES sCE P vj Wrmewiderstand, Chip bis Gehuse pro IGBT / per IGBT R 20,0 K/kW thJC Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro IGBT / per IGBT R 25,0 K/kW thCH Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease Temperatur im Schaltbetrieb T -40 125 C vj op Temperature under switching conditions prepared by: WB date of publication: 2013-11-25 approved by: DTS revision: 2.2 1Technische Information / Technical Information IGBT-Module FF800R17KF6C B2 IGBT-modules Vorlufige Daten Preliminary Data Diode, Wechselrichter / Diode, Inverter Hchstzulssige Werte / Maximum Rated Values Periodische Spitzensperrspannung Tvj = 25C 1700 V V RRM Repetitive peak reverse voltage T = 125C 1700 vj Dauergleichstrom I 800 A F Continuous DC forward current Periodischer Spitzenstrom t = 1 ms I 1600 A P FRM Repetitive peak forward current Grenzlastintegral V = 0 V, t = 10 ms, T = 125C It 170 kAs R P vj It - value Mindesteinschaltdauer ton min 10,0 s Minimum turn-on time Charakteristische Werte / Characteristic Values min. typ. max. Durchlassspannung I = 800 A, V = 0 V T = 25C 2,10 2,50 V F GE vj V F Forward voltage I = 800 A, V = 0 V T = 125C 2,10 2,50 V F GE vj Rckstromspitze I = 800 A, - di /dt = 6300 A/s (T =125C) T = 25C 800 A F F vj vj Peak reverse recovery current V = 900 V T = 125C I 900 A R vj RM V = -15 V GE Sperrverzgerungsladung I = 800 A, - di /dt = 6300 A/s (T =125C) T = 25C 170 C F F vj vj Recovered charge V = 900 V T = 125C Q 310 C R vj r V = -15 V GE Abschaltenergie pro Puls I = 800 A, - di /dt = 6300 A/s (T =125C) T = 25C 80,0 mJ F F vj vj Reverse recovery energy V = 900 V T = 125C E 170 mJ R vj rec V = -15 V GE Wrmewiderstand, Chip bis Gehuse pro Diode / per diode RthJC 34,0 K/kW Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro Diode / per diode R 43,0 K/kW thCH Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease Temperatur im Schaltbetrieb Tvj op -40 125 C Temperature under switching conditions prepared by: WB date of publication: 2013-11-25 approved by: DTS revision: 2.2 2