FF900R12ME7 B11 EconoDUAL3 Modul mit TRENCHSTOP IGBT7 und Emitter Controlled 7 Diode und NTC EconoDUAL3 module with TRENCHSTOPIGBT7 and Emitter Controlled 7 diode and NTC VCES = 1200V I = 900A / I = 1800A C nom CRM Potentielle Anwendungen Potential Applications Hochleistungsumrichter High power converters Hybrid-Nutzfahrzeuge Commercial Agriculture Vehicles Motorantriebe Motor drives Servoumrichter Servo drives USV-Systeme UPS systems Elektrische Eigenschaften Electrical Features Integrierter Temperatursensor Integrated temperature sensor TM TM Trenchstop IGBT7 Trenchstop IGBT7 V mit positivem Temperaturkoeffizienten V with positive temperature coefficient CEsat CEsat Mechanische Eigenschaften Mechanical Features Hohe Leistungsdichte High power density Isolierte Bodenplatte Isolated base plate PressFIT Verbindungstechnik PressFIT contact technology Standardgehuse Standard housing Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 Datasheet Please read the Important Notice and Warnings at the end of this document V 3.0 www.infineon.com 2019-12-20FF900R12ME7 B11 IGBT,Wechselrichter / IGBT,Inverter Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25C V 1200 V vj CES Collector-emitter voltage Kollektor-Dauergleichstrom TC = 90C, Tvj max = 175C ICDC 900 A Continuous DC collector current Grenzeffektivstrom der Modul DC-Kontakte TTerminal 90C, TC = 90C 580 I A TRMS Maximum RMS module DC-terminal current T 105C, T = 90C 565 Terminal C Periodischer Kollektor-Spitzenstrom tP = 1 ms ICRM 1800 A Repetitive peak collector current Gate-Emitter-Spitzenspannung V +/-20 V GES Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung I = 900 A T = 25C 1,50 1,80 V C vj Collector-emitter saturation voltage VGE = 15 V Tvj = 125C VCE sat 1,65 V T = 175C 1,75 V vj Gate-Schwellenspannung I = 18,0 mA, V = V , T = 25C V 5,15 5,80 6,45 V C CE GE vj GEth Gate threshold voltage Gateladung VGE = -15 / 15 V, VCE = 600 V QG 14,3 C Gate charge Interner Gatewiderstand T = 25C R 0,5 vj Gint Internal gate resistor Eingangskapazitt f = 100 kHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 122 nF Input capacitance Rckwirkungskapazitt f = 100 kHz, T = 25C, V = 25 V, V = 0 V C 0,72 nF vj CE GE res Reverse transfer capacitance Kollektor-Emitter-Reststrom VCE = 1200 V, VGE = 0 V, Tvj = 25C ICES 0,1 mA Collector-emitter cut-off current Gate-Emitter-Reststrom V = 0 V, V = 20 V, T = 25C I 100 nA CE GE vj GES Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last I = 900 A, V = 600 V T = 25C 0,41 s C CE vj td on Turn-on delay time, inductive load VGE = -15 / 15 V Tvj = 125C 0,46 s R = 0,51 T = 175C 0,49 s Gon vj Anstiegszeit, induktive Last I = 900 A, V = 600 V T = 25C 0,10 s C CE vj tr Rise time, inductive load V = -15 / 15 V T = 125C 0,11 s GE vj R = 0,51 T = 175C 0,12 s Gon vj Abschaltverzgerungszeit, induktive Last I = 900 A, V = 600 V T = 25C 0,55 s C CE vj td off Turn-off delay time, inductive load V = -15 / 15 V T = 125C 0,63 s GE vj R = 0,51 T = 175C 0,69 s Goff vj Fallzeit, induktive Last I = 900 A, V = 600 V T = 25C 0,11 s C CE vj tf Fall time, inductive load V = -15 / 15 V T = 125C 0,23 s GE vj R = 0,51 T = 175C 0,33 s Goff vj Einschaltverlustenergie pro Puls I = 900 A, V = 600 V, L = 25 nH T = 25C 89,0 mJ C CE vj Turn-on energy loss per pulse di/dt = 6200 A/s (T = 175C) T = 125C E 138 mJ vj vj on V = -15 / 15 V, R = 0,51 T = 175C 170 mJ GE Gon vj Abschaltverlustenergie pro Puls I = 900 A, V = 600 V, L = 25 nH T = 25C 89,0 mJ C CE vj Turn-off energy loss per pulse du/dt = 3000 V/s (T = 175C) T = 125C E 130 mJ vj vj off V = -15 / 15 V, R = 0,51 T = 175C 158 mJ GE Goff vj Kurzschluverhalten V 15 V, V = 800 V t 8 s, T = 150C 3200 A GE CC P vj ISC SC data V = V -L di/dt t 6 s, T = 175C 3000 A CEmax CES sCE P vj Wrmewiderstand, Chip bis Gehuse pro IGBT / per IGBT R 0,0452 K/W thJC Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro IGBT / per IGBT RthCH 0,0269 K/W Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease Temperatur im Schaltbetrieb T -40 175 C vj op Temperature under switching conditions Datasheet 2 V 3.0 2019-12-20