Technische Information / Technical Information IGBT-Module FP100R12KT4 IGBT-modules EconoPIM3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled4 Diode EconoPIM3 module with trench/fieldstop IGBT4 and Emitter Controlled4 diode Vorlufige Daten IGBT,Wechselrichter / IGBT,Inverter Preliminary Data Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25C V 1200 V vj CES Collector-emitter voltage Kollektor-Dauergleichstrom T = 95C, T = 175C I 100 A C vj max C nom Continuous DC collector current Periodischer Kollektor-Spitzenstrom t = 1 ms I 200 A P CRM Repetitive peak collector current Gesamt-Verlustleistung T = 25C, T = 175C P 515 W C vj max tot Total power dissipation Gate-Emitter-Spitzenspannung VGES +/-20 V Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung I = 100 A, V = 15 V T = 25C 1,75 2,20 V C GE vj Collector-emitter saturation voltage I = 100 A, V = 15 V T = 125C V 2,05 V C GE vj CE sat I = 100 A, V = 15 V T = 150C 2,10 V C GE vj Gate-Schwellenspannung I = 3,80 mA, V = V , T = 25C V 5,2 5,8 6,4 V C CE GE vj GEth Gate threshold voltage Gateladung VGE = -15 V ... +15 V QG 0,80 C Gate charge Interner Gatewiderstand T = 25C R 7,5 vj Gint Internal gate resistor Eingangskapazitt f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 6,30 nF Input capacitance Rckwirkungskapazitt f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 0,27 nF vj CE GE res Reverse transfer capacitance Kollektor-Emitter-Reststrom VCE = 1200 V, VGE = 0 V, Tvj = 25C ICES 1,0 mA Collector-emitter cut-off current Gate-Emitter-Reststrom V = 0 V, V = 20 V, T = 25C I 100 nA CE GE vj GES Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last I = 100 A, V = 600 V T = 25C 0,16 s C CE vj t d on Turn-on delay time, inductive load VGE = 15 V Tvj = 125C 0,17 s R = 1,6 T = 150C 0,17 s Gon vj Anstiegszeit, induktive Last I = 100 A, V = 600 V T = 25C 0,03 s C CE vj t r Rise time, inductive load VGE = 15 V Tvj = 125C 0,04 s R = 1,6 T = 150C 0,04 s Gon vj Abschaltverzgerungszeit, induktive Last I = 100 A, V = 600 V T = 25C 0,33 s C CE vj t d off Turn-off delay time, inductive load VGE = 15 V Tvj = 125C 0,43 s R = 1,6 T = 150C 0,45 s Goff vj Fallzeit, induktive Last I = 100 A, V = 600 V T = 25C 0,08 s C CE vj t f Fall time, inductive load VGE = 15 V Tvj = 125C 0,15 s R = 1,6 T = 150C 0,17 s Goff vj Einschaltverlustenergie pro Puls I = 100 A, V = 600 V, L = 40 nH T = 25C 5,50 mJ C CE S vj Turn-on energy loss per pulse VGE = 15 V, di/dt = 3000 A/s (Tvj = 150C) Tvj = 125C Eon 8,50 mJ R = 1,6 T = 150C 9,50 mJ Gon vj Abschaltverlustenergie pro Puls I = 100 A, V = 600 V, L = 40 nH T = 25C 5,50 mJ C CE S vj Turn-off energy loss per pulse VGE = 15 V, du/dt = 3600 V/s (Tvj = 150C)Tvj = 125C Eoff 8,50 mJ R = 1,6 T = 150C 9,50 mJ Goff vj Kurzschluverhalten V 15 V, V = 900 V GE CC ISC SC data VCEmax = VCES -LsCE di/dt tP 10 s, Tvj = 150C 400 A Wrmewiderstand, Chip bis Gehuse pro IGBT / per IGBT R 0,29 K/W thJC Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro IGBT / per IGBT R 0,13 K/W thCH Thermal resistance, case to heatsink Paste = 1 W/(mK) / grease = 1 W/(mK) Temperatur im Schaltbetrieb T -40 150 C vj op Temperature under switching conditions prepared by: AS date of publication: 2013-11-04 approved by: RS revision: 2.0 1Technische Information / Technical Information IGBT-Module FP100R12KT4 IGBT-modules Vorlufige Daten Preliminary Data Diode, Wechselrichter / Diode, Inverter Hchstzulssige Werte / Maximum Rated Values Periodische Spitzensperrspannung T = 25C V 1200 V vj RRM Repetitive peak reverse voltage Dauergleichstrom I 100 A F Continuous DC forward current Periodischer Spitzenstrom t = 1 ms I 200 A P FRM Repetitive peak forward current Grenzlastintegral V = 0 V, t = 10 ms, T = 125C 1550 As R P vj It It - value VR = 0 V, tP = 10 ms, Tvj = 150C 1500 As Charakteristische Werte / Characteristic Values min. typ. max. Durchlassspannung I = 100 A, V = 0 V T = 25C 1,70 2,15 V F GE vj Forward voltage I = 100 A, V = 0 V T = 125C V 1,65 V F GE vj F IF = 100 A, VGE = 0 V Tvj = 150C 1,65 V Rckstromspitze I = 100 A, - di /dt = 3000 A/s (T =150C) T = 25C 115 A F F vj vj Peak reverse recovery current V = 600 V T = 125C I 125 A R vj RM VGE = -15 V Tvj = 150C 130 A Sperrverzgerungsladung I = 100 A, - di /dt = 3000 A/s (T =150C) T = 25C 9,50 C F F vj vj Recovered charge V = 600 V T = 125C Q 17,5 C R vj r VGE = -15 V Tvj = 150C 20,5 C Abschaltenergie pro Puls I = 100 A, - di /dt = 3000 A/s (T =150C) T = 25C 3,50 mJ F F vj vj Reverse recovery energy V = 600 V T = 125C E 6,00 mJ R vj rec VGE = -15 V Tvj = 150C 7,50 mJ Wrmewiderstand, Chip bis Gehuse pro Diode / per diode RthJC 0,50 K/W Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro Diode / per diode R 0,225 K/W thCH Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease Temperatur im Schaltbetrieb Tvj op -40 150 C Temperature under switching conditions Diode, Gleichrichter / Diode, Rectifier Hchstzulssige Werte / Maximum Rated Values Periodische Spitzensperrspannung T = 25C V 1600 V vj RRM Repetitive peak reverse voltage Durchlassstrom Grenzeffektivwert pro Chip TC = 80C IFRMSM 100 A Maximum RMS forward current per chip Gleichrichter Ausgang Grenzeffektivstrom T = 80C I 150 A C RMSM Maximum RMS current at rectifier output Stostrom Grenzwert t = 10 ms, T = 25C 1150 A p vj I FSM Surge forward current tp = 10 ms, Tvj = 150C 880 A Grenzlastintegral tp = 10 ms, Tvj = 25C 6600 As It It - value t = 10 ms, T = 150C 3850 As p vj Charakteristische Werte / Characteristic Values min. typ. max. Durchlassspannung T = 150C, I = 100 A V 1,00 V vj F F Forward voltage Sperrstrom Tvj = 150C, VR = 1600 V IR 1,00 mA Reverse current Wrmewiderstand, Chip bis Gehuse pro Diode / per diode R 0,40 K/W thJC Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro Diode / per diode RthCH 0,18 K/W Thermal resistance, case to heatsink Paste = 1 W/(mK) / grease = 1 W/(mK) Temperatur im Schaltbetrieb T -40 150 C vj op Temperature under switching conditions prepared by: AS date of publication: 2013-11-04 approved by: RS revision: 2.0 2