X-On Electronics has gained recognition as a prominent supplier of FP100R12KT4 IGBT Modules across the USA, India, Europe, Australia, and various other global locations. FP100R12KT4 IGBT Modules are a product manufactured by Infineon. We provide cost-effective solutions for IGBT Modules, ensuring timely deliveries around the world.

FP100R12KT4 Infineon

FP100R12KT4 electronic component of Infineon
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Part No.FP100R12KT4
Manufacturer: Infineon
Category: IGBT Modules
Description: Infineon Technologies IGBT Modules IGBT-MODULE
Datasheet: FP100R12KT4 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 162.794 ea
Line Total: USD 162.79 
Availability - 17
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
17
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ : 1
Multiples : 1
1 : USD 162.794
10 : USD 157.2855

   
Manufacturer
Product Category
Product
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Maximum Operating Temperature
Minimum Operating Temperature
Packaging
Pd - Power Dissipation
Package / Case
Brand
Mounting Style
Maximum Gate Emitter Voltage
Factory Pack Quantity :
Height
Length
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
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We are delighted to provide the FP100R12KT4 from our IGBT Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FP100R12KT4 and other electronic components in the IGBT Modules category and beyond.

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Technische Information / Technical Information IGBT-Module FP100R12KT4 IGBT-modules EconoPIM3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled4 Diode EconoPIM3 module with trench/fieldstop IGBT4 and Emitter Controlled4 diode Vorlufige Daten IGBT,Wechselrichter / IGBT,Inverter Preliminary Data Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25C V 1200 V vj CES Collector-emitter voltage Kollektor-Dauergleichstrom T = 95C, T = 175C I 100 A C vj max C nom Continuous DC collector current Periodischer Kollektor-Spitzenstrom t = 1 ms I 200 A P CRM Repetitive peak collector current Gesamt-Verlustleistung T = 25C, T = 175C P 515 W C vj max tot Total power dissipation Gate-Emitter-Spitzenspannung VGES +/-20 V Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung I = 100 A, V = 15 V T = 25C 1,75 2,20 V C GE vj Collector-emitter saturation voltage I = 100 A, V = 15 V T = 125C V 2,05 V C GE vj CE sat I = 100 A, V = 15 V T = 150C 2,10 V C GE vj Gate-Schwellenspannung I = 3,80 mA, V = V , T = 25C V 5,2 5,8 6,4 V C CE GE vj GEth Gate threshold voltage Gateladung VGE = -15 V ... +15 V QG 0,80 C Gate charge Interner Gatewiderstand T = 25C R 7,5 vj Gint Internal gate resistor Eingangskapazitt f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 6,30 nF Input capacitance Rckwirkungskapazitt f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 0,27 nF vj CE GE res Reverse transfer capacitance Kollektor-Emitter-Reststrom VCE = 1200 V, VGE = 0 V, Tvj = 25C ICES 1,0 mA Collector-emitter cut-off current Gate-Emitter-Reststrom V = 0 V, V = 20 V, T = 25C I 100 nA CE GE vj GES Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last I = 100 A, V = 600 V T = 25C 0,16 s C CE vj t d on Turn-on delay time, inductive load VGE = 15 V Tvj = 125C 0,17 s R = 1,6 T = 150C 0,17 s Gon vj Anstiegszeit, induktive Last I = 100 A, V = 600 V T = 25C 0,03 s C CE vj t r Rise time, inductive load VGE = 15 V Tvj = 125C 0,04 s R = 1,6 T = 150C 0,04 s Gon vj Abschaltverzgerungszeit, induktive Last I = 100 A, V = 600 V T = 25C 0,33 s C CE vj t d off Turn-off delay time, inductive load VGE = 15 V Tvj = 125C 0,43 s R = 1,6 T = 150C 0,45 s Goff vj Fallzeit, induktive Last I = 100 A, V = 600 V T = 25C 0,08 s C CE vj t f Fall time, inductive load VGE = 15 V Tvj = 125C 0,15 s R = 1,6 T = 150C 0,17 s Goff vj Einschaltverlustenergie pro Puls I = 100 A, V = 600 V, L = 40 nH T = 25C 5,50 mJ C CE S vj Turn-on energy loss per pulse VGE = 15 V, di/dt = 3000 A/s (Tvj = 150C) Tvj = 125C Eon 8,50 mJ R = 1,6 T = 150C 9,50 mJ Gon vj Abschaltverlustenergie pro Puls I = 100 A, V = 600 V, L = 40 nH T = 25C 5,50 mJ C CE S vj Turn-off energy loss per pulse VGE = 15 V, du/dt = 3600 V/s (Tvj = 150C)Tvj = 125C Eoff 8,50 mJ R = 1,6 T = 150C 9,50 mJ Goff vj Kurzschluverhalten V 15 V, V = 900 V GE CC ISC SC data VCEmax = VCES -LsCE di/dt tP 10 s, Tvj = 150C 400 A Wrmewiderstand, Chip bis Gehuse pro IGBT / per IGBT R 0,29 K/W thJC Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro IGBT / per IGBT R 0,13 K/W thCH Thermal resistance, case to heatsink Paste = 1 W/(mK) / grease = 1 W/(mK) Temperatur im Schaltbetrieb T -40 150 C vj op Temperature under switching conditions prepared by: AS date of publication: 2013-11-04 approved by: RS revision: 2.0 1Technische Information / Technical Information IGBT-Module FP100R12KT4 IGBT-modules Vorlufige Daten Preliminary Data Diode, Wechselrichter / Diode, Inverter Hchstzulssige Werte / Maximum Rated Values Periodische Spitzensperrspannung T = 25C V 1200 V vj RRM Repetitive peak reverse voltage Dauergleichstrom I 100 A F Continuous DC forward current Periodischer Spitzenstrom t = 1 ms I 200 A P FRM Repetitive peak forward current Grenzlastintegral V = 0 V, t = 10 ms, T = 125C 1550 As R P vj It It - value VR = 0 V, tP = 10 ms, Tvj = 150C 1500 As Charakteristische Werte / Characteristic Values min. typ. max. Durchlassspannung I = 100 A, V = 0 V T = 25C 1,70 2,15 V F GE vj Forward voltage I = 100 A, V = 0 V T = 125C V 1,65 V F GE vj F IF = 100 A, VGE = 0 V Tvj = 150C 1,65 V Rckstromspitze I = 100 A, - di /dt = 3000 A/s (T =150C) T = 25C 115 A F F vj vj Peak reverse recovery current V = 600 V T = 125C I 125 A R vj RM VGE = -15 V Tvj = 150C 130 A Sperrverzgerungsladung I = 100 A, - di /dt = 3000 A/s (T =150C) T = 25C 9,50 C F F vj vj Recovered charge V = 600 V T = 125C Q 17,5 C R vj r VGE = -15 V Tvj = 150C 20,5 C Abschaltenergie pro Puls I = 100 A, - di /dt = 3000 A/s (T =150C) T = 25C 3,50 mJ F F vj vj Reverse recovery energy V = 600 V T = 125C E 6,00 mJ R vj rec VGE = -15 V Tvj = 150C 7,50 mJ Wrmewiderstand, Chip bis Gehuse pro Diode / per diode RthJC 0,50 K/W Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro Diode / per diode R 0,225 K/W thCH Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease Temperatur im Schaltbetrieb Tvj op -40 150 C Temperature under switching conditions Diode, Gleichrichter / Diode, Rectifier Hchstzulssige Werte / Maximum Rated Values Periodische Spitzensperrspannung T = 25C V 1600 V vj RRM Repetitive peak reverse voltage Durchlassstrom Grenzeffektivwert pro Chip TC = 80C IFRMSM 100 A Maximum RMS forward current per chip Gleichrichter Ausgang Grenzeffektivstrom T = 80C I 150 A C RMSM Maximum RMS current at rectifier output Stostrom Grenzwert t = 10 ms, T = 25C 1150 A p vj I FSM Surge forward current tp = 10 ms, Tvj = 150C 880 A Grenzlastintegral tp = 10 ms, Tvj = 25C 6600 As It It - value t = 10 ms, T = 150C 3850 As p vj Charakteristische Werte / Characteristic Values min. typ. max. Durchlassspannung T = 150C, I = 100 A V 1,00 V vj F F Forward voltage Sperrstrom Tvj = 150C, VR = 1600 V IR 1,00 mA Reverse current Wrmewiderstand, Chip bis Gehuse pro Diode / per diode R 0,40 K/W thJC Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro Diode / per diode RthCH 0,18 K/W Thermal resistance, case to heatsink Paste = 1 W/(mK) / grease = 1 W/(mK) Temperatur im Schaltbetrieb T -40 150 C vj op Temperature under switching conditions prepared by: AS date of publication: 2013-11-04 approved by: RS revision: 2.0 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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