X-On Electronics has gained recognition as a prominent supplier of FP100R12KT4PBPSA1 IGBT Modules across the USA, India, Europe, Australia, and various other global locations. FP100R12KT4PBPSA1 IGBT Modules are a product manufactured by Infineon. We provide cost-effective solutions for IGBT Modules, ensuring timely deliveries around the world.

FP100R12KT4PBPSA1 Infineon

FP100R12KT4PBPSA1 electronic component of Infineon
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See Product Specifications
Part No.FP100R12KT4PBPSA1
Manufacturer: Infineon
Category: IGBT Modules
Description: IGBT Modules LOW POWER ECONO
Datasheet: FP100R12KT4PBPSA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 176.627 ea
Line Total: USD 176.63 
Availability - 1
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 176.627
12 : USD 153.945
30 : USD 153.934

   
Manufacturer
Product Category
Product
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Maximum Operating Temperature
Minimum Operating Temperature
Packaging
Pd - Power Dissipation
Hts Code
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the FP100R12KT4PBPSA1 from our IGBT Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FP100R12KT4PBPSA1 and other electronic components in the IGBT Modules category and beyond.

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/TechnicalInformation IGBT- FP100R12KT4 IGBT-modules EconoPIM3ModulmitTrench/FeldstoppIGBT4undEmitterControlled4Diode EconoPIM3modulewithtrench/fieldstopIGBT4andEmitterControlled4diode IGBT,/IGBT,Inverter PreliminaryData /MaximumRatedValues T = 25C V  1200  V vj CES Collector-emittervoltage T = 95C, T = 175C I  100  A C vj max C nom ContinuousDCcollectorcurrent t = 1 ms I  200  A P CRM Repetitivepeakcollectorcurrent T = 25C, T = 175C P  515  W C vj max tot Totalpowerdissipation  VGES  +/-20  V Gate-emitterpeakvoltage /CharacteristicValues min. typ. max. I = 100 A, V = 15 V T = 25C 1,75 2,20 V C GE vj Collector-emittersaturationvoltage I = 100 A, V = 15 V T = 125C V 2,05 V C GE vj CE sat I = 100 A, V = 15 V T = 150C 2,10 V C GE vj I = 3,80 mA, V = V , T = 25C V 5,2 5,8 6,4 V C CE GE vj GEth Gatethresholdvoltage VGE = -15 V ... +15 V QG  0,80  C Gatecharge T = 25C R  7,5  vj Gint Internalgateresistor f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies  6,30  nF Inputcapacitance f = 1 MHz, T = 25C, V = 25 V, V = 0 V C  0,27  nF vj CE GE res Reversetransfercapacitance - VCE = 1200 V, VGE = 0 V, Tvj = 25C ICES   1,0 mA Collector-emittercut-offcurrent - V = 0 V, V = 20 V, T = 25C I   100 nA CE GE vj GES Gate-emitterleakagecurrent () I = 100 A, V = 600 V T = 25C 0,16 s C CE vj t d on Turn-ondelaytime,inductiveload VGE = 15 V Tvj = 125C  0,17  s R = 1,6 T = 150C 0,17 s Gon vj () I = 100 A, V = 600 V T = 25C 0,03 s C CE vj t r Risetime,inductiveload VGE = 15 V Tvj = 125C  0,04  s R = 1,6 T = 150C 0,04 s Gon vj () I = 100 A, V = 600 V T = 25C 0,33 s C CE vj t d off Turn-offdelaytime,inductiveload VGE = 15 V Tvj = 125C  0,43  s R = 1,6 T = 150C 0,45 s Goff vj () I = 100 A, V = 600 V T = 25C 0,08 s C CE vj t f Falltime,inductiveload VGE = 15 V Tvj = 125C  0,15  s R = 1,6 T = 150C 0,17 s Goff vj () I = 100 A, V = 600 V, L = 40 nH T = 25C 5,50 mJ C CE S vj Turn-onenergylossperpulse VGE = 15 V, di/dt = 3000 A/s (Tvj = 150C) Tvj = 125C Eon  8,50  mJ R = 1,6 T = 150C 9,50 mJ Gon vj ( I = 100 A, V = 600 V, L = 40 nH T = 25C 5,50 mJ C CE S vj Turn-offenergylossperpulse VGE = 15 V, du/dt = 3600 V/s (Tvj = 150C)Tvj = 125C Eoff  8,50  mJ R = 1,6 T = 150C 9,50 mJ Goff vj V 15 V, V = 900 V GE CC ISC   SCdata VCEmax = VCES -LsCE di/dt tP 10 s, Tvj = 150C 400 A IGBT/perIGBT R   0,29 K/W thJC Thermalresistance,junctiontocase IGBT/perIGBT R  0,13 K/W thCH Thermalresistance,casetoheatsink Paste=1W/(mK)/grease=1W/(mK)  T -40  150 C vj op Temperatureunderswitchingconditions preparedby:AS dateofpublication:2013-11-04 approvedby:RS revision:2.0 1/TechnicalInformation IGBT- FP100R12KT4 IGBT-modules PreliminaryData ,/Diode,Inverter /MaximumRatedValues T = 25C V  1200  V vj RRM Repetitivepeakreversevoltage  I  100  A F ContinuousDCforwardcurrent t = 1 ms I  200  A P FRM Repetitivepeakforwardcurrent I2t- V = 0 V, t = 10 ms, T = 125C 1550 As R P vj It   It-value VR = 0 V, tP = 10 ms, Tvj = 150C 1500 As /CharacteristicValues min. typ. max. I = 100 A, V = 0 V T = 25C 1,70 2,15 V F GE vj Forwardvoltage I = 100 A, V = 0 V T = 125C V 1,65 V F GE vj F IF = 100 A, VGE = 0 V Tvj = 150C 1,65 V I = 100 A, - di /dt = 3000 A/s (T =150C) T = 25C 115 A F F vj vj Peakreverserecoverycurrent V = 600 V T = 125C I  125  A R vj RM VGE = -15 V Tvj = 150C 130 A I = 100 A, - di /dt = 3000 A/s (T =150C) T = 25C 9,50 C F F vj vj Recoveredcharge V = 600 V T = 125C Q  17,5  C R vj r VGE = -15 V Tvj = 150C 20,5 C I = 100 A, - di /dt = 3000 A/s (T =150C) T = 25C 3,50 mJ F F vj vj Reverserecoveryenergy V = 600 V T = 125C E  6,00  mJ R vj rec VGE = -15 V Tvj = 150C 7,50 mJ /perdiode RthJC   0,50 K/W Thermalresistance,junctiontocase /perdiode R  0,225 K/W thCH Thermalresistance,casetoheatsink =1W/(mK)/ =1W/(mK) Paste grease  Tvj op -40  150 C Temperatureunderswitchingconditions ,/Diode,Rectifier /MaximumRatedValues T = 25C V  1600  V vj RRM Repetitivepeakreversevoltage () TC = 80C IFRMSM  100  A MaximumRMSforwardcurrentperchip T = 80C I  150  A C RMSM MaximumRMScurrentatrectifieroutput t = 10 ms, T = 25C 1150 A p vj I   FSM Surgeforwardcurrent tp = 10 ms, Tvj = 150C 880 A I2t- tp = 10 ms, Tvj = 25C 6600 As It   It-value t = 10 ms, T = 150C 3850 As p vj /CharacteristicValues min. typ. max. T = 150C, I = 100 A V  1,00  V vj F F Forwardvoltage Tvj = 150C, VR = 1600 V IR  1,00  mA Reversecurrent /perdiode R   0,40 K/W thJC Thermalresistance,junctiontocase /perdiode RthCH  0,18 K/W Thermalresistance,casetoheatsink Paste=1W/(mK)/grease=1W/(mK)  T -40  150 C vj op Temperatureunderswitchingconditions preparedby:AS dateofpublication:2013-11-04 approvedby:RS revision:2.0 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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