X-On Electronics has gained recognition as a prominent supplier of FP150R07N3E4 IGBT Modules across the USA, India, Europe, Australia, and various other global locations. FP150R07N3E4 IGBT Modules are a product manufactured by Infineon. We provide cost-effective solutions for IGBT Modules, ensuring timely deliveries around the world.

FP150R07N3E4 Infineon

FP150R07N3E4 electronic component of Infineon
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See Product Specifications
Part No.FP150R07N3E4
Manufacturer: Infineon
Category: IGBT Modules
Description: Infineon Technologies IGBT Modules IGBT Module 150A 650V
Datasheet: FP150R07N3E4 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3: USD 154.9088 ea
Line Total: USD 464.73 
Availability - 0
MOQ: 3  Multiples: 3
Pack Size: 3
Availability Price Quantity
0
Ship by Wed. 13 Nov to Tue. 19 Nov
MOQ : 3
Multiples : 3
3 : USD 154.9088

0
Ship by Tue. 19 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 150.88
10 : USD 150.8685

   
Manufacturer
Product Category
Product
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Maximum Operating Temperature
Minimum Operating Temperature
Packaging
Pd - Power Dissipation
Hts Code
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the FP150R07N3E4 from our IGBT Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FP150R07N3E4 and other electronic components in the IGBT Modules category and beyond.

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Technische Information / Technical Information IGBT-Module FP150R07N3E4 IGBT-modules EconoPIM3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled Diode und NTC EconoPIM3 module with trench/fieldstop IGBT4 and Emitter Controlled Diode and NTC Vorlufige Daten / Preliminary Data VCES = 650V I = 150A / I = 300A C nom CRM Typische Anwendungen Typical Applications Motorantriebe Motor Drives Elektrische Eigenschaften Electrical Features Erhhte Sperrspannungsfestigkeit auf 650V Increased blocking voltage capability to 650V Hohe Kurzschlussrobustheit, selbstlimitierender High Short Circuit Capability, Self Limiting Short Kurzschlussstrom Circuit Current Trench IGBT 4 Trench IGBT 4 T = 150C T = 150C vj op vj op V CEsat mit positivem Temperaturkoeffizienten VCEsat with positive Temperature Coefficient Mechanische Eigenschaften Mechanical Features Integrierter NTC Temperatur Sensor Integrated NTC temperature sensor Kupferbodenplatte Copper Base Plate Ltverbindungstechnik Solder Contact Technology Standardgehuse Standard Housing Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 prepared by: AS date of publication: 2013-11-05 approved by: RS revision: 2.0 UL approved (E83335) 1Technische Information / Technical Information IGBT-Module FP150R07N3E4 IGBT-modules Vorlufige Daten Preliminary Data IGBT,Wechselrichter / IGBT,Inverter Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25C V 650 V vj CES Collector-emitter voltage Kollektor-Dauergleichstrom T = 55C, T = 175C I 150 A C vj max C nom Continuous DC collector current Periodischer Kollektor-Spitzenstrom t = 1 ms I 300 A P CRM Repetitive peak collector current Gesamt-Verlustleistung T = 25C, T = 175C P 430 W C vj max tot Total power dissipation Gate-Emitter-Spitzenspannung VGES +/-20 V Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung I = 150 A, V = 15 V T = 25C 1,55 1,95 V C GE vj Collector-emitter saturation voltage I = 150 A, V = 15 V T = 125C V 1,70 V C GE vj CE sat I = 150 A, V = 15 V T = 150C 1,75 V C GE vj Gate-Schwellenspannung I = 2,40 mA, V = V , T = 25C V 5,0 5,8 6,5 V C CE GE vj GEth Gate threshold voltage Gateladung VGE = -15 V ... +15 V QG 1,50 C Gate charge Interner Gatewiderstand T = 25C R 2,0 vj Gint Internal gate resistor Eingangskapazitt f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 9,30 nF Input capacitance Rckwirkungskapazitt f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 0,285 nF vj CE GE res Reverse transfer capacitance Kollektor-Emitter-Reststrom VCE = 650 V, VGE = 0 V, Tvj = 25C ICES 1,0 mA Collector-emitter cut-off current Gate-Emitter-Reststrom V = 0 V, V = 20 V, T = 25C I 400 nA CE GE vj GES Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last I = 150 A, V = 300 V T = 25C 0,12 s C CE vj t d on Turn-on delay time, inductive load VGE = 15 V Tvj = 125C 0,14 s R = 3,3 T = 150C 0,14 s Gon vj Anstiegszeit, induktive Last I = 150 A, V = 300 V T = 25C 0,03 s C CE vj t r Rise time, inductive load VGE = 15 V Tvj = 125C 0,04 s R = 3,3 T = 150C 0,04 s Gon vj Abschaltverzgerungszeit, induktive Last I = 150 A, V = 300 V T = 25C 0,34 s C CE vj t d off Turn-off delay time, inductive load VGE = 15 V Tvj = 125C 0,37 s R = 3,3 T = 150C 0,38 s Goff vj Fallzeit, induktive Last I = 150 A, V = 300 V T = 25C 0,06 s C CE vj t f Fall time, inductive load VGE = 15 V Tvj = 125C 0,07 s R = 3,3 T = 150C 0,07 s Goff vj Einschaltverlustenergie pro Puls I = 150 A, V = 300 V, L = 30 nH T = 25C 0,94 mJ C CE S vj Turn-on energy loss per pulse VGE = 15 V, di/dt = 5400 A/s (Tvj = 150C) Tvj = 125C Eon 1,50 mJ R = 3,3 T = 150C 1,65 mJ Gon vj Abschaltverlustenergie pro Puls I = 150 A, V = 300 V, L = 30 nH T = 25C 5,75 mJ C CE S vj Turn-off energy loss per pulse VGE = 15 V, du/dt = 3800 V/s (Tvj = 150C)Tvj = 125C Eoff 7,40 mJ R = 3,3 T = 150C 7,85 mJ Goff vj Kurzschluverhalten V 15 V, V = 360 V t 10 s, T = 25C 720 A GE CC P vj ISC SC data VCEmax = VCES -LsCE di/dt tP 10 s, Tvj = 150C 570 A Wrmewiderstand, Chip bis Gehuse pro IGBT / per IGBT R 0,35 K/W thJC Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro IGBT / per IGBT R 0,14 K/W thCH Thermal resistance, case to heatsink Paste = 1 W/(mK) / grease = 1 W/(mK) Temperatur im Schaltbetrieb T -40 150 C vj op Temperature under switching conditions prepared by: AS date of publication: 2013-11-05 approved by: RS revision: 2.0 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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