X-On Electronics has gained recognition as a prominent supplier of FP15R12YT3 IGBT Modules across the USA, India, Europe, Australia, and various other global locations. FP15R12YT3 IGBT Modules are a product manufactured by Infineon. We provide cost-effective solutions for IGBT Modules, ensuring timely deliveries around the world.

FP15R12YT3 Infineon

FP15R12YT3 electronic component of Infineon
Images are for reference only
See Product Specifications
Part No.FP15R12YT3
Manufacturer: Infineon
Category: IGBT Modules
Description: IGBT Modules N-CH 1.2KV 25A
Datasheet: FP15R12YT3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 87.648 ea
Line Total: USD 87.65 
Availability - 36
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
36
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 87.648
10 : USD 82.962
60 : USD 79.552
100 : USD 79.552
260 : USD 79.552
500 : USD 79.552
1000 : USD 79.552
2500 : USD 79.552

   
Manufacturer
Product Category
Product
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Maximum Operating Temperature
Minimum Operating Temperature
Packaging
Pd - Power Dissipation
Package / Case
Hts Code
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the FP15R12YT3 from our IGBT Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FP15R12YT3 and other electronic components in the IGBT Modules category and beyond.

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Technische Information / technical information IGBT-Module FP15R12YT3 IGBT-modules Vorlufige Daten preliminary data IGBT-Wechselrichter / IGBT-inverter Hchstzulssige Werte / maximum rated values % & () *+,- . * / + & 0 () 1+ 234 . 5 /) + & () 1+ 5 6 7 & . 8 + & 0 () 1+9: 5 * + & () =3= .. > < 6 * ,- A * Charakteristische Werte / characteristic values B C 1+ & . 58 * , & . *8 % & () *+, DE= .8 8. * 1+ & . 58 * , & . *8 % & . () .8F * < 1+ & 8G 58 *+, & * ,8 % & () * ,=H 8 80 G8 * * , & . * . * I 8. J) 1 < % & () K2= 8 L 6 C & . MN68 % & ()8 *+, & *8 * , & * )KOD .8. P Q < 6 C & . MN68 % & ()8 *+, & *8 * , & * )ROD 8 S P *+, & . *8 * , & *8 % & () 1+,- 8 5 *+, & *8 * , & *8 % & () 1 ,- S 5 6T 6 U V W 1+ & . 58 *+, & G * U W * , & X. *8 32 & G L8 % & () Y 32 8 J * , & X. *8 32 & G L8 % & . () 8 J 5 6 U V W 1+ & . 58 *+, & G * U W * , & X. *8 32 & G L8 % & () R 8 J * , & X. *8 32 & G L8 % & . () 8 J 5 6T 6 U V W 1+ & . 58 *+, & G * U W * , & X. *8 3ZZ & G L8 % & () Y 3ZZ 8 J * , & X. *8 3ZZ & G L8 % & . () 8S J P 6 U V W 1+ & . 58 *+, & G * U W * , & X. *8 3ZZ & G L8 % & () Z 8 J * , & X. *8 3ZZ & G L8 % & . () 8. J 1+ & . 58 *+, & G *8 V- & N * , & X. *8 32 & G L8 % & () 32 .8G * , & X. *8 32 & G L8 % & . () 8. 5 1+ & . 58 *+, & G *8 V- & N * , & X. *8 3ZZ & G L8 % & () 3ZZ 8F * , & X. *8 3ZZ & G L8 % & . () .8 6 7 . J 8 * , . * 1-+ G 5) % . ()8 *++ & F *8 *+,4E & *+,- VD+, A 1 >C < 1 a =Hb+ .88 A> 8 1 a c >C < 1 a A 1 a =H+f 8 A> 8 d7ED=O & . >AU W A deROEDO & . >AU W 1Technische Information / technical information IGBT-Module FP15R12YT3 IGBT-modules Vorlufige Daten preliminary data Diode-Wechselrichter / diode-inverter Hchstzulssige Werte / maximum rated values 6 % & () *99: . * / 1g . 5 /) < 6 7 & . 1g9: 5 < 6 *9 & *8 7 & . 8 % & . () 1h SS8 5h 1h Charakteristische Werte / characteristic values B / 1g & . 58 * , & *8 % & () *g .8G 8. * < 1g & . 58 * , & *8 % & . () .8G * Q 6 1g & . 58 gA & F 5AJ *9 & G *8 * , & . *8 % & () 19: 08 5 *9 & G *8 * , & . *8 % & . () 8 5 6T 1g & . 58 gA & F 5AJ *9 & G *8 * , & . *8 % & () IR .8G J) *9 & G *8 * , & . *8 % & . () 8F J) 5 1g & . 58 gA & F 5AJ *9 & G *8 * , & . *8 % & () ROi 8 *9 & G *8 * , & . *8 % & . () .8 1 >C < / =Hb+ .8 .8F A> 8 c >C < / A =H+f 8 A> 8 d7ED=O & . >AU W A deROEDO & . >AU W Diode-Gleichrichter / diode-rectifier Hchstzulssige Werte / maximum rated values Q < 6 % & () *99: .G * / 6 < / + & 0 () 1g9:-: 5 < B 5 6 + & 0 () 19:-: 5 B 6< j & . 8 % & () 5 1g-: < j & . 8 % & . () 5 6 j & . 8 % & () S 5h 1h 1h j & . 8 % & . () G 5h Charakteristische Werte / characteristic values B / % & . ()8 1g & . 5 *g .8 * < % & . () *kl 80 * 6< % & . () k . 8 L % & . ()8 *9 & .G * 19 8 8 5 1 >C < / =Hb+ .8 .8S A> 8 c >C < / A =H+f 8 A> 8 d7ED=O & . >AU W A deROEDO & . >AU W 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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