Technische Information / Technical Information IGBT-Module FP25R12KT3 IGBT-modules Vorlufige Daten IGBT,Wechselrichter / IGBT,Inverter Preliminary Data Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25C V 1200 V vj CES Collector-emitter voltage Kollektor-Dauergleichstrom T = 80C, T = 150C I 25 A C vj max C nom Continuous DC collector current TC = 25C, Tvj max = 150C IC 40 A Periodischer Kollektor-Spitzenstrom t = 1 ms I 50 A P CRM Repetitive peak collector current Gesamt-Verlustleistung T = 25C, T = 150 P 155 W C vj max tot Total power dissipation Gate-Emitter-Spitzenspannung VGES +/-20 V Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung I = 25 A, V = 15 V T = 25C 1,70 2,15 V C GE vj V CE sat Collector-emitter saturation voltage I = 25 A, V = 15 V T = 125C 1,90 V C GE vj Gate-Schwellenspannung IC = 1,00 mA, VCE = VGE, Tvj = 25C VGEth 5,0 5,8 6,5 V Gate threshold voltage Gateladung V = -15 V ... +15 V Q 0,24 C GE G Gate charge Interner Gatewiderstand Tvj = 25C RGint 8,0 Internal gate resistor Eingangskapazitt f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 1,80 nF vj CE GE ies Input capacitance Rckwirkungskapazitt f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 0,064 nF Reverse transfer capacitance Kollektor-Emitter-Reststrom V = 1200 V, V = 0 V, T = 25C I 5,0 mA CE GE vj CES Collector-emitter cut-off current Gate-Emitter-Reststrom V = 0 V, V = 20 V, T = 25C I 400 nA CE GE vj GES Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last IC = 25 A, VCE = 600 V Tvj = 25C 0,09 s t d on Turn-on delay time, inductive load V = 15 V T = 125C 0,09 s GE vj RGon = 36 Anstiegszeit, induktive Last IC = 25 A, VCE = 600 V Tvj = 25C 0,03 s t r Rise time, inductive load V = 15 V T = 125C 0,05 s GE vj RGon = 36 Abschaltverzgerungszeit, induktive Last IC = 25 A, VCE = 600 V Tvj = 25C 0,42 s t d off Turn-off delay time, inductive load V = 15 V T = 125C 0,52 s GE vj RGoff = 36 Fallzeit, induktive Last IC = 25 A, VCE = 600 V Tvj = 25C 0,07 s t f Fall time, inductive load V = 15 V T = 125C 0,09 s GE vj RGoff = 36 Einschaltverlustenergie pro Puls IC = 25 A, VCE = 600 V, LS = 45 nH Tvj = 25C 2,40 mJ Turn-on energy loss per pulse V = 15 V T = 125C E 3,50 mJ GE vj on RGon = 36 Abschaltverlustenergie pro Puls IC = 25 A, VCE = 600 V, LS = 45 nH Tvj = 25C 1,80 mJ Turn-off energy loss per pulse V = 15 V T = 125C E 2,10 mJ GE vj off RGoff = 36 Kurzschluverhalten VGE 15 V, VCC = 900 V I SC SC data V = V -L di/dt t 10 s, T = 125C 100 A CEmax CES sCE P vj Wrmewiderstand, Chip bis Gehuse pro IGBT / per IGBT R 0,80 K/W thJC Thermal resistance, junction to case Temperatur im Schaltbetrieb T -40 125 C vj op Temperature under switching conditions prepared by: AS date of publication: 2013-10-03 approved by: RS revision: 2.0 1Technische Information / Technical Information IGBT-Module FP25R12KT3 IGBT-modules Vorlufige Daten Preliminary Data Diode, Wechselrichter / Diode, Inverter Hchstzulssige Werte / Maximum Rated Values Periodische Spitzensperrspannung T = 25C V 1200 V vj RRM Repetitive peak reverse voltage Dauergleichstrom I 25 A F Continuous DC forward current Periodischer Spitzenstrom t = 1 ms I 50 A P FRM Repetitive peak forward current Grenzlastintegral V = 0 V, t = 10 ms, T = 125C It 170 As R P vj It - value Charakteristische Werte / Characteristic Values min. typ. max. Durchlassspannung I = 25 A, V = 0 V T = 25C 1,65 2,15 V F GE vj VF Forward voltage I = 25 A, V = 0 V T = 125C 1,65 V F GE vj Rckstromspitze I = 25 A, - di /dt = 700 A/s (T =125C) T = 25C 26,0 A F F vj vj Peak reverse recovery current V = 600 V T = 125C I 24,0 A R vj RM V = -15 V GE Sperrverzgerungsladung I = 25 A, - di /dt = 700 A/s (T =125C) T = 25C 2,80 C F F vj vj Recovered charge V = 600 V T = 125C Q 5,00 C R vj r V = -15 V GE Abschaltenergie pro Puls I = 25 A, - di /dt = 700 A/s (T =125C) T = 25C 0,90 mJ F F vj vj Reverse recovery energy V = 600 V T = 125C E 1,80 mJ R vj rec V = -15 V GE Wrmewiderstand, Chip bis Gehuse pro Diode / per diode R 1,35 K/W thJC Thermal resistance, junction to case Temperatur im Schaltbetrieb Tvj op -40 125 C Temperature under switching conditions Diode, Gleichrichter / Diode, Rectifier Hchstzulssige Werte / Maximum Rated Values Periodische Spitzensperrspannung T = 25C V 1600 V vj RRM Repetitive peak reverse voltage Durchlassstrom Grenzeffektivwert pro Chip T = 80C I 50 A C FRMSM Maximum RMS forward current per chip Gleichrichter Ausgang Grenzeffektivstrom T = 80C I 60 A C RMSM Maximum RMS current at rectifier output Stostrom Grenzwert t = 10 ms, T = 25C 315 A p vj I FSM Surge forward current tp = 10 ms, Tvj = 150C 260 A Grenzlastintegral tp = 10 ms, Tvj = 25C 495 As It It - value t = 10 ms, T = 150C 340 As p vj Charakteristische Werte / Characteristic Values min. typ. max. Durchlassspannung T = 150C, I = 25 A V 1,05 V vj F F Forward voltage Sperrstrom Tvj = 150C, VR = 1600 V IR 2,00 mA Reverse current Wrmewiderstand, Chip bis Gehuse pro Diode / per diode R 1,00 K/W thJC Thermal resistance, junction to case Temperatur im Schaltbetrieb Tvj op C Temperature under switching conditions prepared by: AS date of publication: 2013-10-03 approved by: RS revision: 2.0 2