Technische Information / Technical Information IGBT-Module FP25R12W2T4 B11 IGBT-modules EasyPIM2B Modul PressFIT mit Trench/Feldstopp IGBT4 und Emitter Controlled4 Diode EasyPIM2B module PressFIT with trench/fieldstop IGBT4 and Emitter Controlled4 Diode Vorlufige Daten IGBT,Wechselrichter / IGBT,Inverter Preliminary Data Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25C V 1200 V vj CES Collector-emitter voltage Kollektor-Dauergleichstrom T = 100C, T = 175C I 25 A C vj max C nom Continuous DC collector current TC = 25C, Tvj max = 175C IC 39 A Periodischer Kollektor-Spitzenstrom t = 1 ms I 50 A P CRM Repetitive peak collector current Gesamt-Verlustleistung T = 25C, T = 175C P 175 W C vj max tot Total power dissipation Gate-Emitter-Spitzenspannung VGES +/-20 V Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung I = 25 A, V = 15 V T = 25C 1,85 2,25 V C GE vj Collector-emitter saturation voltage I = 25 A, V = 15 V T = 125C V 2,15 V C GE vj CE sat I = 25 A, V = 15 V T = 150C 2,25 V C GE vj Gate-Schwellenspannung I = 0,80 mA, V = V , T = 25C V 5,2 5,8 6,4 V C CE GE vj GEth Gate threshold voltage Gateladung VGE = -15 V ... +15 V QG 0,20 C Gate charge Interner Gatewiderstand T = 25C R 0,0 vj Gint Internal gate resistor Eingangskapazitt f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 1,45 nF Input capacitance Rckwirkungskapazitt f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 0,05 nF vj CE GE res Reverse transfer capacitance Kollektor-Emitter-Reststrom VCE = 1200 V, VGE = 0 V, Tvj = 25C ICES 1,0 mA Collector-emitter cut-off current Gate-Emitter-Reststrom V = 0 V, V = 20 V, T = 25C I 400 nA CE GE vj GES Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last I = 25 A, V = 600 V T = 25C 0,026 s C CE vj t d on Turn-on delay time, inductive load VGE = 15 V Tvj = 125C 0,026 s R = 20 T = 150C 0,026 s Gon vj Anstiegszeit, induktive Last I = 25 A, V = 600 V T = 25C 0,016 s C CE vj t r Rise time, inductive load VGE = 15 V Tvj = 125C 0,02 s R = 20 T = 150C 0,021 s Gon vj Abschaltverzgerungszeit, induktive Last I = 25 A, V = 600 V T = 25C 0,19 s C CE vj t d off Turn-off delay time, inductive load VGE = 15 V Tvj = 125C 0,28 s R = 20 T = 150C 0,30 s Goff vj Fallzeit, induktive Last I = 25 A, V = 600 V T = 25C 0,18 s C CE vj t f Fall time, inductive load VGE = 15 V Tvj = 125C 0,21 s R = 20 T = 150C 0,22 s Goff vj Einschaltverlustenergie pro Puls I = 25 A, V = 600 V, L = 35 nH T = 25C 1,60 mJ C CE S vj Turn-on energy loss per pulse VGE = 15 V, di/dt = 1700 A/s (Tvj = 150C) Tvj = 125C Eon 2,40 mJ R = 20 T = 150C 2,60 mJ Gon vj Abschaltverlustenergie pro Puls I = 25 A, V = 600 V, L = 35 nH T = 25C 1,45 mJ C CE S vj Turn-off energy loss per pulse VGE = 15 V, du/dt = 3600 V/s (Tvj = 150C)Tvj = 125C Eoff 2,15 mJ R = 20 T = 150C 2,35 mJ Goff vj Kurzschluverhalten V 15 V, V = 800 V GE CC ISC SC data VCEmax = VCES -LsCE di/dt tP 10 s, Tvj = 150C 90 A Wrmewiderstand, Chip bis Gehuse pro IGBT / per IGBT R 0,75 0,85 K/W thJC Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro IGBT / per IGBT R 0,70 K/W thCH Thermal resistance, case to heatsink Paste = 1 W/(mK) / grease = 1 W/(mK) Temperatur im Schaltbetrieb T -40 150 C vj op Temperature under switching conditions prepared by: CM date of publication: 2013-11-04 approved by: RS revision: 2.1 1Technische Information / Technical Information IGBT-Module FP25R12W2T4 B11 IGBT-modules Vorlufige Daten Preliminary Data Diode, Wechselrichter / Diode, Inverter Hchstzulssige Werte / Maximum Rated Values Periodische Spitzensperrspannung T = 25C V 1200 V vj RRM Repetitive peak reverse voltage Dauergleichstrom I 25 A F Continuous DC forward current Periodischer Spitzenstrom t = 1 ms I 50 A P FRM Repetitive peak forward current Grenzlastintegral V = 0 V, t = 10 ms, T = 125C 90,0 As R P vj It It - value VR = 0 V, tP = 10 ms, Tvj = 150C 75,0 As Charakteristische Werte / Characteristic Values min. typ. max. Durchlassspannung I = 25 A, V = 0 V T = 25C 1,75 2,25 V F GE vj Forward voltage I = 25 A, V = 0 V T = 125C V 1,75 V F GE vj F IF = 25 A, VGE = 0 V Tvj = 150C 1,75 V Rckstromspitze I = 25 A, - di /dt = 1700 A/s (T =150C) T = 25C 48,0 A F F vj vj Peak reverse recovery current V = 600 V T = 125C I 50,0 A R vj RM VGE = -15 V Tvj = 150C 52,0 A Sperrverzgerungsladung I = 25 A, - di /dt = 1700 A/s (T =150C) T = 25C 2,50 C F F vj vj Recovered charge V = 600 V T = 125C Q 4,40 C R vj r VGE = -15 V Tvj = 150C 4,90 C Abschaltenergie pro Puls I = 25 A, - di /dt = 1700 A/s (T =150C) T = 25C 0,95 mJ F F vj vj Reverse recovery energy V = 600 V T = 125C E 1,75 mJ R vj rec VGE = -15 V Tvj = 150C 2,05 mJ Wrmewiderstand, Chip bis Gehuse pro Diode / per diode RthJC 1,10 1,20 K/W Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro Diode / per diode R 0,90 K/W thCH Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease Temperatur im Schaltbetrieb Tvj op -40 150 C Temperature under switching conditions Diode, Gleichrichter / Diode, Rectifier Hchstzulssige Werte / Maximum Rated Values Periodische Spitzensperrspannung T = 25C V 1600 V vj RRM Repetitive peak reverse voltage Durchlassstrom Grenzeffektivwert pro Chip TC = 100C IFRMSM 50 A Maximum RMS forward current per chip Gleichrichter Ausgang Grenzeffektivstrom T = 100C I 50 A C RMSM Maximum RMS current at rectifier output Stostrom Grenzwert t = 10 ms, T = 25C 450 A p vj I FSM Surge forward current tp = 10 ms, Tvj = 150C 370 A Grenzlastintegral tp = 10 ms, Tvj = 25C 1000 As It It - value t = 10 ms, T = 150C 685 As p vj Charakteristische Werte / Characteristic Values min. typ. max. Durchlassspannung T = 150C, I = 25 A V 0,90 V vj F F Forward voltage Sperrstrom Tvj = 150C, VR = 1600 V IR 1,00 mA Reverse current Wrmewiderstand, Chip bis Gehuse pro Diode / per diode R 1,05 1,15 K/W thJC Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro Diode / per diode RthCH 0,95 K/W Thermal resistance, case to heatsink Paste = 1 W/(mK) / grease = 1 W/(mK) Temperatur im Schaltbetrieb T C vj op Temperature under switching conditions prepared by: CM date of publication: 2013-11-04 approved by: RS revision: 2.1 2