Technische Information / Technical Information IGBT-Module FP35R12U1T4 IGBT-modules SmartPIM1 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode und PressFIT / NTC SmartPIM1 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and PressFIT / NTC Vorlufige Daten / Preliminary Data V = 1200V CES I = 35A / I = 70A C nom CRM Typische Anwendungen Typical Applications Hilfsumrichter Auxiliary Inverters Klimaanlagen Air Conditioning Motorantriebe Motor Drives Servoumrichter Servo Drives Elektrische Eigenschaften Electrical Features Niedrige Schaltverluste Low Switching Losses Trench IGBT 4 Trench IGBT 4 T = 150C T = 150C vj op vj op Niedriges V Low V CEsat CEsat Mechanische Eigenschaften Mechanical Features Al2O3 Substrat mit kleinem thermischen Al2O 3 Substrate with Low Thermal Resistance Widerstand Robuste Duplex-Rahmen Konstruktion Rugged Duplex frame construction Robuste selbsteinpressende Montage Rugged selfacting PressFIT assembly Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 prepared by: DK date of publication: 2013-11-05 approved by: MB revision: 2.0 UL approved (E83335) 1Technische Information / Technical Information IGBT-Module FP35R12U1T4 IGBT-modules Vorlufige Daten Preliminary Data IGBT,Wechselrichter / IGBT,Inverter Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25C V 1200 V vj CES Collector-emitter voltage Kollektor-Dauergleichstrom T = 100C, T = 175C I 35 A C vj max C nom Continuous DC collector current TC = 25C, Tvj max = 175C IC 54 A Periodischer Kollektor-Spitzenstrom t = 1 ms I 70 A P CRM Repetitive peak collector current Gesamt-Verlustleistung T = 25C, T = 175C P 250 W C vj max tot Total power dissipation Gate-Emitter-Spitzenspannung VGES +/-20 V Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung I = 35 A, V = 15 V T = 25C 1,85 2,25 V C GE vj Collector-emitter saturation voltage I = 35 A, V = 15 V T = 125C V 2,15 V C GE vj CE sat I = 35 A, V = 15 V T = 150C 2,25 V C GE vj Gate-Schwellenspannung I = 1,20 mA, V = V , T = 25C V 5,2 5,8 6,4 V C CE GE vj GEth Gate threshold voltage Gateladung VGE = -15 V ... +15 V QG 0,27 C Gate charge Interner Gatewiderstand T = 25C R 0,0 vj Gint Internal gate resistor Eingangskapazitt f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 2,00 nF Input capacitance Rckwirkungskapazitt f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 0,07 nF vj CE GE res Reverse transfer capacitance Kollektor-Emitter-Reststrom VCE = 1200 V, VGE = 0 V, Tvj = 25C ICES 1,0 mA Collector-emitter cut-off current Gate-Emitter-Reststrom V = 0 V, V = 20 V, T = 25C I 400 nA CE GE vj GES Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last I = 35 A, V = 600 V T = 25C 0,025 s C CE vj t d on Turn-on delay time, inductive load VGE = 15 V Tvj = 125C 0,025 s R = 12 T = 150C 0,025 s Gon vj Anstiegszeit, induktive Last I = 35 A, V = 600 V T = 25C 0,013 s C CE vj t r Rise time, inductive load VGE = 15 V Tvj = 125C 0,016 s R = 12 T = 150C 0,018 s Gon vj Abschaltverzgerungszeit, induktive Last I = 35 A, V = 600 V T = 25C 0,24 s C CE vj t d off Turn-off delay time, inductive load VGE = 15 V Tvj = 125C 0,295 s R = 12 T = 150C 0,31 s Goff vj Fallzeit, induktive Last I = 35 A, V = 600 V T = 25C 0,115 s C CE vj t f Fall time, inductive load VGE = 15 V Tvj = 125C 0,17 s R = 12 T = 150C 0,20 s Goff vj Einschaltverlustenergie pro Puls I = 35 A, V = 600 V, L = 35 nH T = 25C 1,90 mJ C CE S vj Turn-on energy loss per pulse VGE = 15 V, di/dt = 2500 A/s (Tvj = 150C) Tvj = 125C Eon 2,90 mJ R = 12 T = 150C 3,15 mJ Gon vj Abschaltverlustenergie pro Puls I = 35 A, V = 600 V, L = 35 nH T = 25C 2,00 mJ C CE S vj Turn-off energy loss per pulse VGE = 15 V, du/dt = 3600 V/s (Tvj = 150C)Tvj = 125C Eoff 2,90 mJ R = 12 T = 150C 3,20 mJ Goff vj Kurzschluverhalten V 15 V, V = 800 V GE CC ISC SC data VCEmax = VCES -LsCE di/dt tP 10 s, Tvj = 150C 130 A Wrmewiderstand, Chip bis Gehuse pro IGBT / per IGBT R 0,55 0,60 K/W thJC Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro IGBT / per IGBT R 0,50 K/W thCH Thermal resistance, case to heatsink Paste = 1 W/(mK) / grease = 1 W/(mK) Temperatur im Schaltbetrieb T -40 150 C vj op Temperature under switching conditions prepared by: DK date of publication: 2013-11-05 approved by: MB revision: 2.0 2