FP35R12W2T4P EasyPIM Modul mit schnellem Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode und NTC / bereits aufgetragenem Thermal Interface Material EasyPIM module with fast Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC / pre-applied Thermal Interface Material V = 1200V CES IC nom = 35A / ICRM = 70A Typische Anwendungen Typical Applications Hilfsumrichter Auxiliary inverters Klimaanlagen Air conditioning Motorantriebe Motor drives Elektrische Eigenschaften Electrical Features Niedrige Schaltverluste Low switching losses Niedriges V Low V CEsat CEsat Trench IGBT 4 Trench IGBT 4 V mit positivem Temperaturkoeffizienten V with positive temperature coefficient CEsat CEsat Mechanische Eigenschaften Mechanical Features Al O Substrat mit kleinem thermischen Al O substrate with low thermal resistance 2 3 2 3 Widerstand Kompaktes Design Compact design Ltverbindungstechnik Solder contact technology Robuste Montage durch integrierte Rugged mounting due to integrated mounting Befestigungsklammern clamps Thermisches Interface Material bereits Pre-applied Thermal Interface Material aufgetragen Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 Datasheet Please read the Important Notice and Warnings at the end of this document V 3.0 www.infineon.com 2017-05-03FP35R12W2T4P IGBT,Wechselrichter / IGBT,Inverter Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25C V 1200 V vj CES Collector-emitter voltage Kollektor-Dauergleichstrom TH = 80C, Tvj max = 175C IC nom 35 A Continuous DC collector current Periodischer Kollektor-Spitzenstrom t = 1 ms I 70 A P CRM Repetitive peak collector current Gate-Emitter-Spitzenspannung VGES +/-20 V Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung IC = 35 A, VGE = 15 V Tvj = 25C 1,85 2,25 V Collector-emitter saturation voltage I = 35 A, V = 15 V T = 125C V 2,15 V C GE vj CE sat IC = 35 A, VGE = 15 V Tvj = 150C 2,25 V Gate-Schwellenspannung IC = 1,20 mA, VCE = VGE, Tvj = 25C VGEth 5,20 5,80 6,40 V Gate threshold voltage Gateladung V = -15 V ... +15 V Q 0,27 C GE G Gate charge Interner Gatewiderstand Tvj = 25C RGint 0,0 Internal gate resistor Eingangskapazitt f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 2,00 nF vj CE GE ies Input capacitance Rckwirkungskapazitt f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 0,07 nF Reverse transfer capacitance Kollektor-Emitter-Reststrom V = 1200 V, V = 0 V, T = 25C I 1,0 mA CE GE vj CES Collector-emitter cut-off current Gate-Emitter-Reststrom VCE = 0 V, VGE = 20 V, Tvj = 25C IGES 100 nA Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last IC = 35 A, VCE = 600 V Tvj = 25C 0,025 s t d on Turn-on delay time, inductive load V = 15 V T = 125C 0,025 s GE vj R = 12 T = 150C 0,025 s Gon vj Anstiegszeit, induktive Last IC = 35 A, VCE = 600 V Tvj = 25C 0,013 s t r Rise time, inductive load V = 15 V T = 125C 0,016 s GE vj R = 12 T = 150C 0,018 s Gon vj Abschaltverzgerungszeit, induktive Last I = 35 A, V = 600 V T = 25C 0,24 s C CE vj t d off Turn-off delay time, inductive load V = 15 V T = 125C 0,295 s GE vj R = 12 T = 150C 0,31 s Goff vj Fallzeit, induktive Last I = 35 A, V = 600 V T = 25C 0,115 s C CE vj t f Fall time, inductive load V = 15 V T = 125C 0,17 s GE vj R = 12 T = 150C 0,20 s Goff vj Einschaltverlustenergie pro Puls I = 35 A, V = 600 V, L = 35 nH T = 25C 1,90 mJ C CE S vj Turn-on energy loss per pulse V = 15 V, di/dt = 2500 A/s (T = 150C) T = 125C E 2,90 mJ GE vj vj on R = 12 T = 150C 3,15 mJ Gon vj Abschaltverlustenergie pro Puls I = 35 A, V = 600 V, L = 35 nH T = 25C 2,00 mJ C CE S vj Turn-off energy loss per pulse V = 15 V, du/dt = 3600 V/s (T = 150C)T = 125C E 2,90 mJ GE vj vj off R = 12 T = 150C 3,20 mJ Goff vj Kurzschluverhalten V 15 V, V = 800 V GE CC I SC SC data V = V -L di/dt t 10 s, T = 150C 130 A CEmax CES sCE P vj Wrmewiderstand, Chip bis Khlkrper pro IGBT / per IGBT RthJH 1,00 K/W Thermal resistance, junction to heatsink valid with IFX pre-applied thermal interface material Temperatur im Schaltbetrieb T -40 150 C vj op Temperature under switching conditions Datasheet 2 V 3.0 2017-05-03