/ Technical Information IGBT- FP40R12KT3 IGBT-modules IGBT, / IGBT,Inverter Preliminary Data / Maximum Rated Values T = 25C V 1200 V vj CES Collector-emitter voltage T = 80C, T = 150C I 40 A C vj max C nom Continuous DC collector current TC = 25C, Tvj max = 150C IC 55 A t = 1 ms I 80 A P CRM Repetitive peak collector current T = 25C, T = 150 P 210 W C vj max tot Total power dissipation VGES +/-20 V Gate-emitter peak voltage / Characteristic Values min. typ. max. I = 40 A, V = 15 V T = 25C 1,80 2,30 V C GE vj V CE sat Collector-emitter saturation voltage I = 40 A, V = 15 V T = 125C 2,05 V C GE vj IC = 1,50 mA, VCE = VGE, Tvj = 25C VGEth 5,0 5,8 6,5 V Gate threshold voltage V = -15 V ... +15 V Q 0,33 C GE G Gate charge Tvj = 25C RGint 6,0 Internal gate resistor f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 2,50 nF vj CE GE ies Input capacitance f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 0,09 nF Reverse transfer capacitance - V = 1200 V, V = 0 V, T = 25C I 5,0 mA CE GE vj CES Collector-emitter cut-off current - V = 0 V, V = 20 V, T = 25C I 400 nA CE GE vj GES Gate-emitter leakage current () IC = 40 A, VCE = 600 V Tvj = 25C 0,09 s t d on Turn-on delay time, inductive load V = 15 V T = 125C 0,09 s GE vj RGon = 27 () IC = 40 A, VCE = 600 V Tvj = 25C 0,03 s t r Rise time, inductive load V = 15 V T = 125C 0,05 s GE vj RGon = 27 () IC = 40 A, VCE = 600 V Tvj = 25C 0,42 s t d off Turn-off delay time, inductive load V = 15 V T = 125C 0,52 s GE vj RGoff = 27 () IC = 40 A, VCE = 600 V Tvj = 25C 0,07 s t f Fall time, inductive load V = 15 V T = 125C 0,09 s GE vj RGoff = 27 () IC = 40 A, VCE = 600 V, LS = 45 nH Tvj = 25C 4,10 mJ Turn-on energy loss per pulse V = 15 V T = 125C E 5,80 mJ GE vj on RGon = 27 ( IC = 40 A, VCE = 600 V, LS = 45 nH Tvj = 25C 3,60 mJ Turn-off energy loss per pulse V = 15 V T = 125C E 4,20 mJ GE vj off RGoff = 27 VGE 15 V, VCC = 900 V I SC SC data V = V -L di/dt t 10 s, T = 125C 160 A CEmax CES sCE P vj IGBT / per IGBT R 0,60 K/W thJC Thermal resistance, junction to case T -40 125 C vj op Temperature under switching conditions prepared by: AS date of publication: 2013-10-03 approved by: RS revision: 2.0 1 / Technical Information IGBT- FP40R12KT3 IGBT-modules Preliminary Data , / Diode, Inverter / Maximum Rated Values T = 25C V 1200 V vj RRM Repetitive peak reverse voltage I 40 A F Continuous DC forward current t = 1 ms I 80 A P FRM Repetitive peak forward current I2t- V = 0 V, t = 10 ms, T = 125C It 320 As R P vj It - value / Characteristic Values min. typ. max. I = 40 A, V = 0 V T = 25C 1,75 2,30 V F GE vj VF Forward voltage I = 40 A, V = 0 V T = 125C 1,75 V F GE vj I = 40 A, - di /dt = 1000 A/s (T =125C) T = 25C 45,0 A F F vj vj Peak reverse recovery current V = 600 V T = 125C I 46,0 A R vj RM V = -15 V GE I = 40 A, - di /dt = 1000 A/s (T =125C) T = 25C 4,40 C F F vj vj Recovered charge V = 600 V T = 125C Q 8,40 C R vj r V = -15 V GE I = 40 A, - di /dt = 1000 A/s (T =125C) T = 25C 1,55 mJ F F vj vj Reverse recovery energy V = 600 V T = 125C E 3,10 mJ R vj rec V = -15 V GE / per diode R 0,95 K/W thJC Thermal resistance, junction to case Tvj op -40 125 C Temperature under switching conditions , / Diode, Rectifier / Maximum Rated Values T = 25C V 1600 V vj RRM Repetitive peak reverse voltage () T = 80C I 50 A C FRMSM Maximum RMS forward current per chip T = 80C I 60 A C RMSM Maximum RMS current at rectifier output t = 10 ms, T = 25C 315 A p vj I FSM Surge forward current tp = 10 ms, Tvj = 150C 260 A I2t- tp = 10 ms, Tvj = 25C 500 As It It - value t = 10 ms, T = 150C 340 As p vj / Characteristic Values min. typ. max. T = 150C, I = 40 A V 1,20 V vj F F Forward voltage Tvj = 150C, VR = 1600 V IR 2,00 mA Reverse current / per diode R 1,00 K/W thJC Thermal resistance, junction to case Tvj op C Temperature under switching conditions prepared by: AS date of publication: 2013-10-03 approved by: RS revision: 2.0 2