/ Technical Information IGBT- FP75R06KE3 IGBT-modules EconoPIM3 Modul mit Trench/Feldstop IGBT und Emitter Controlled3 Diode EconoPIM3 module with the trench/fieldstop IGBT and Emitter Controlled3 diode IGBT, / IGBT,Inverter Preliminary Data / Maximum Rated Values T = 25C V 600 V vj CES Collector-emitter voltage T = 80C, T = 175C I 75 A C vj max C nom Continuous DC collector current TC = 25C, Tvj max = 175C IC 95 A t = 1 ms I 150 A P CRM Repetitive peak collector current T = 25C, T = 175 P 250 W C vj max tot Total power dissipation VGES +/-20 V Gate-emitter peak voltage / Characteristic Values min. typ. max. I = 75 A, V = 15 V T = 25C 1,45 1,90 V C GE vj Collector-emitter saturation voltage I = 75 A, V = 15 V T = 125C V 1,60 V C GE vj CE sat I = 75 A, V = 15 V T = 150C 1,70 V C GE vj I = 1,20 mA, V = V , T = 25C V 4,9 5,8 6,5 V C CE GE vj GEth Gate threshold voltage VGE = -15 V ... +15 V QG 0,75 C Gate charge T = 25C R 0,0 vj Gint Internal gate resistor f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 4,60 nF Input capacitance f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 0,145 nF vj CE GE res Reverse transfer capacitance - VCE = 600 V, VGE = 0 V, Tvj = 25C ICES 1,0 mA Collector-emitter cut-off current - V = 0 V, V = 20 V, T = 25C I 400 nA CE GE vj GES Gate-emitter leakage current () I = 75 A, V = 300 V T = 25C 0,10 s C CE vj t d on Turn-on delay time, inductive load VGE = 15 V Tvj = 125C 0,10 s R = 30 T = 150C 0,10 s Gon vj () I = 75 A, V = 300 V T = 25C 0,06 s C CE vj t r Rise time, inductive load VGE = 15 V Tvj = 125C 0,065 s R = 30 T = 150C 0,07 s Gon vj () I = 75 A, V = 300 V T = 25C 0,60 s C CE vj t d off Turn-off delay time, inductive load VGE = 15 V Tvj = 125C 0,65 s R = 30 T = 150C 0,70 s Goff vj () I = 75 A, V = 300 V T = 25C 0,04 s C CE vj t f Fall time, inductive load VGE = 15 V Tvj = 125C 0,05 s R = 30 T = 150C 0,06 s Goff vj () I = 75 A, V = 300 V, L = 30 nH T = 25C 3,50 mJ C CE S vj Turn-on energy loss per pulse VGE = 15 V, di/dt = 1200 A/s (Tvj = 150C) Tvj = 125C Eon 4,10 mJ R = 30 T = 150C 4,50 mJ Gon vj ( I = 75 A, V = 300 V, L = 30 nH T = 25C 2,90 mJ C CE S vj Turn-off energy loss per pulse VGE = 15 V, du/dt = 2300 V/s (Tvj = 150C)Tvj = 125C Eoff 3,60 mJ R = 30 T = 150C 3,80 mJ Goff vj V 15 V, V = 360 V t 8 s, T = 25C 530 A GE CC P vj ISC SC data VCEmax = VCES -LsCE di/dt tP 6 s, Tvj = 150C 380 A IGBT / per IGBT R 0,60 K/W thJC Thermal resistance, junction to case IGBT / per IGBT R 0,16 K/W thCH Thermal resistance, case to heatsink Paste = 1 W/(mK) / grease = 1 W/(mK) T -40 150 C vj op Temperature under switching conditions prepared by: AS date of publication: 2013-10-03 approved by: RS revision: 2.0 1 / Technical Information IGBT- FP75R06KE3 IGBT-modules Preliminary Data , / Diode, Inverter / Maximum Rated Values T = 25C V 600 V vj RRM Repetitive peak reverse voltage I 75 A F Continuous DC forward current t = 1 ms I 150 A P FRM Repetitive peak forward current I2t- V = 0 V, t = 10 ms, T = 125C 660 As R P vj It It - value VR = 0 V, tP = 10 ms, Tvj = 150C 610 As / Characteristic Values min. typ. max. I = 75 A, V = 0 V T = 25C 1,55 1,95 V F GE vj Forward voltage I = 75 A, V = 0 V T = 125C V 1,50 V F GE vj F IF = 75 A, VGE = 0 V Tvj = 150C 1,45 V I = 75 A, - di /dt = 1200 A/s (T =150C) T = 25C 38,0 A F F vj vj Peak reverse recovery current V = 300 V T = 125C I 48,0 A R vj RM VGE = -15 V Tvj = 150C 51,0 A I = 75 A, - di /dt = 1200 A/s (T =150C) T = 25C 2,30 C F F vj vj Recovered charge V = 300 V T = 125C Q 4,60 C R vj r VGE = -15 V Tvj = 150C 5,60 C I = 75 A, - di /dt = 1200 A/s (T =150C) T = 25C 0,35 mJ F F vj vj Reverse recovery energy V = 300 V T = 125C E 0,80 mJ R vj rec VGE = -15 V Tvj = 150C 1,00 mJ / per diode RthJC 0,95 K/W Thermal resistance, junction to case / per diode R 0,255 K/W thCH Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease Tvj op -40 150 C Temperature under switching conditions , / Diode, Rectifier / Maximum Rated Values T = 25C V 1600 V vj RRM Repetitive peak reverse voltage () TC = 80C IFRMSM 100 A Maximum RMS forward current per chip T = 80C I 100 A C RMSM Maximum RMS current at rectifier output t = 10 ms, T = 25C 740 A p vj I FSM Surge forward current tp = 10 ms, Tvj = 150C 580 A I2t- tp = 10 ms, Tvj = 25C 2750 As It It - value t = 10 ms, T = 150C 1700 As p vj / Characteristic Values min. typ. max. T = 150C, I = 75 A V 1,05 V vj F F Forward voltage Tvj = 150C, VR = 1600 V IR 1,00 mA Reverse current / per diode R 0,50 K/W thJC Thermal resistance, junction to case / per diode RthCH 0,135 K/W Thermal resistance, case to heatsink Paste = 1 W/(mK) / grease = 1 W/(mK) T -40 150 C vj op Temperature under switching conditions prepared by: AS date of publication: 2013-10-03 approved by: RS revision: 2.0 2