FP75R07N2E4 EconoPIM2 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 3 Diode und NTC EconoPIM2 module with Trench/Fieldstop IGBT4 and Emitter Controlled 3 diode and NTC V = 650V CES IC nom = 75A / ICRM = 150A Typische Anwendungen Typical Applications Motorantriebe Motor drives Elektrische Eigenschaften Electrical Features Erhhte Sperrspannungsfestigkeit auf 650V Increased blocking voltage capability up to 650V Hohe Kurzschlussrobustheit High short-circuit capability Tvj op = 150C Tvj op = 150C Trench IGBT 4 Trench IGBT 4 V mit positivem Temperaturkoeffizienten V with positive temperature coefficient CEsat CEsat Mechanische Eigenschaften Mechanical Features Integrierter NTC Temperatur Sensor Integrated NTC temperature sensor Isolierte Bodenplatte Isolated base plate Kupferbodenplatte Copper base plate Ltverbindungstechnik Solder contact technology Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 Datasheet Please read the Important Notice and Warnings at the end of this document V 3.0 www.infineon.com 2017-06-22FP75R07N2E4 IGBT,Wechselrichter / IGBT,Inverter Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25C V 650 V vj CES Collector-emitter voltage Kollektor-Dauergleichstrom T = 70C, T = 175C I 75 A C vj max C nom Continuous DC collector current TC = 25C, Tvj max = 175C IC 95 A Periodischer Kollektor-Spitzenstrom t = 1 ms I 150 A P CRM Repetitive peak collector current Gate-Emitter-Spitzenspannung VGES +/-20 V Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung IC = 75 A, VGE = 15 V Tvj = 25C 1,55 1,95 V Collector-emitter saturation voltage I = 75 A, V = 15 V T = 125C V 1,70 V C GE vj CE sat IC = 75 A, VGE = 15 V Tvj = 150C 1,75 V Gate-Schwellenspannung IC = 1,20 mA, VCE = VGE, Tvj = 25C VGEth 5,05 5,80 6,45 V Gate threshold voltage Gateladung V = -15 V ... +15 V Q 0,75 C GE G Gate charge Interner Gatewiderstand Tvj = 25C RGint 0,0 Internal gate resistor Eingangskapazitt f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 4,60 nF vj CE GE ies Input capacitance Rckwirkungskapazitt f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 0,145 nF Reverse transfer capacitance Kollektor-Emitter-Reststrom V = 650 V, V = 0 V, T = 25C I 1,0 mA CE GE vj CES Collector-emitter cut-off current Gate-Emitter-Reststrom VCE = 0 V, VGE = 20 V, Tvj = 25C IGES 100 nA Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last IC = 75 A, VCE = 300 V Tvj = 25C 0,025 s t d on Turn-on delay time, inductive load V = 15 V T = 125C 0,025 s GE vj R = 5,1 T = 150C 0,025 s Gon vj Anstiegszeit, induktive Last IC = 75 A, VCE = 300 V Tvj = 25C 0,02 s t r Rise time, inductive load V = 15 V T = 125C 0,02 s GE vj R = 5,1 T = 150C 0,02 s Gon vj Abschaltverzgerungszeit, induktive Last I = 75 A, V = 300 V T = 25C 0,21 s C CE vj t d off Turn-off delay time, inductive load V = 15 V T = 125C 0,24 s GE vj R = 5,1 T = 150C 0,25 s Goff vj Fallzeit, induktive Last I = 75 A, V = 300 V T = 25C 0,06 s C CE vj t f Fall time, inductive load V = 15 V T = 125C 0,07 s GE vj R = 5,1 T = 150C 0,07 s Goff vj Einschaltverlustenergie pro Puls I = 75 A, V = 300 V, L = 30 nH T = 25C 0,385 mJ C CE S vj Turn-on energy loss per pulse V = 15 V, di/dt = 4000 A/s (T = 150C) T = 125C E 0,55 mJ GE vj vj on R = 5,1 T = 150C 0,66 mJ Gon vj Abschaltverlustenergie pro Puls I = 75 A, V = 300 V, L = 30 nH T = 25C 3,35 mJ C CE S vj Turn-off energy loss per pulse V = 15 V, du/dt = 4000 V/s (T = 150C)T = 125C E 3,90 mJ GE vj vj off R = 5,1 T = 150C 4,20 mJ Goff vj Kurzschluverhalten V 15 V, V = 360 V t 10 s, T = 25C 360 A GE CC P vj I SC SC data V = V -L di/dt t 10 s, T = 150C 290 A CEmax CES sCE P vj Wrmewiderstand, Chip bis Gehuse pro IGBT / per IGBT RthJC 0,600 K/W Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro IGBT / per IGBT R 0,327 K/W thCH Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease Temperatur im Schaltbetrieb Tvj op -40 150 C Temperature under switching conditions Datasheet 2 V 3.0 2017-06-22