/ Technical Information IGBT- FP75R12KT4 B11 IGBT-modules EconoPIM3 /IGBT NTC EconoPIM3 module with fast Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC V = 1200V CES I = 75A / I = 150A C nom CRM Typical Applications Auxiliary Inverters Motor Drives Servo Drives Electrical Features Low Switching Losses T = 150C T = 150C vj op vj op V V with positive Temperature Coefficient CEsat CEsat VCEsat Low VCEsat Mechanical Features High Power and Thermal Cycling Capability NTC Integrated NTC temperature sensor Copper Base Plate PressFIT PressFIT Contact Technology Standard Housing Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 prepared by: AS date of publication: 2013-10-29 approved by: RS revision: 3.0 UL approved (E83335) 1 / Technical Information IGBT- FP75R12KT4 B11 IGBT-modules IGBT, / IGBT,Inverter / Maximum Rated Values T = 25C V 1200 V vj CES Collector-emitter voltage T = 95C, T = 175C I 75 A C vj max C nom Continuous DC collector current t = 1 ms I 150 A P CRM Repetitive peak collector current T = 25C, T = 175 P 385 W C vj max tot Total power dissipation VGES +/-20 V Gate-emitter peak voltage / Characteristic Values min. typ. max. I = 75 A, V = 15 V T = 25C 1,85 2,15 V C GE vj Collector-emitter saturation voltage I = 75 A, V = 15 V T = 125C V 2,15 V C GE vj CE sat I = 75 A, V = 15 V T = 150C 2,25 V C GE vj I = 2,40 mA, V = V , T = 25C V 5,2 5,8 6,4 V C CE GE vj GEth Gate threshold voltage VGE = -15 V ... +15 V QG 0,57 C Gate charge T = 25C R 10 vj Gint Internal gate resistor f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 4,30 nF Input capacitance f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 0,16 nF vj CE GE res Reverse transfer capacitance - VCE = 1200 V, VGE = 0 V, Tvj = 25C ICES 1,0 mA Collector-emitter cut-off current - V = 0 V, V = 20 V, T = 25C I 100 nA CE GE vj GES Gate-emitter leakage current () I = 75 A, V = 600 V T = 25C 0,16 s C CE vj t d on Turn-on delay time, inductive load VGE = 15 V Tvj = 125C 0,17 s R = 1,1 T = 150C 0,17 s Gon vj () I = 75 A, V = 600 V T = 25C 0,03 s C CE vj t r Rise time, inductive load VGE = 15 V Tvj = 125C 0,04 s R = 1,1 T = 150C 0,04 s Gon vj () I = 75 A, V = 600 V T = 25C 0,34 s C CE vj t d off Turn-off delay time, inductive load VGE = 15 V Tvj = 125C 0,43 s R = 1,1 T = 150C 0,45 s Goff vj () I = 75 A, V = 600 V T = 25C 0,08 s C CE vj t f Fall time, inductive load VGE = 15 V Tvj = 125C 0,15 s R = 1,1 T = 150C 0,17 s Goff vj () I = 75 A, V = 600 V, L = 40 nH T = 25C 3,10 mJ C CE S vj Turn-on energy loss per pulse VGE = 15 V, di/dt = 2500 A/s (Tvj = 150C) Tvj = 125C Eon 6,60 mJ R = 1,1 T = 150C 7,65 mJ Gon vj ( I = 75 A, V = 600 V, L = 40 nH T = 25C 4,20 mJ C CE S vj Turn-off energy loss per pulse VGE = 15 V, du/dt = 3600 V/s (Tvj = 150C)Tvj = 125C Eoff 6,40 mJ R = 1,1 T = 150C 7,20 mJ Goff vj V 15 V, V = 800 V GE CC ISC SC data VCEmax = VCES -LsCE di/dt tP 10 s, Tvj = 150C 270 A IGBT / per IGBT R 0,39 K/W thJC Thermal resistance, junction to case IGBT / per IGBT R 0,13 K/W thCH Thermal resistance, case to heatsink Paste = 1 W/(mK) / grease = 1 W/(mK) T -40 150 C vj op Temperature under switching conditions prepared by: AS date of publication: 2013-10-29 approved by: RS revision: 3.0 2