FP75R12KT4BOSA1 Infineon

Product / Process Change Notification N 2017-039-A Dear Customer, Please find attached our INFINEON Technologies PCN: Introduction of additional wafer production site with 12 Wafer diameter for IGBT4 1200V (T4) and IGBT HighSpeed 3 (H3) technology. Furthermore 8 wafer diameter will be introduced for Diode EC4 1200V technology Important information for your attention: Please respond to this PCN by indicating your decision on the approval form, sign it and return to your sales partner before 25. May 2017. Infineon aligns with the widely-recognized JEDEC STANDARD JESD46, which stipulates: Lack of acknowledgement of the PCN within 30 days constitutes acceptance of the change. Your prompt reply will help Infineon Technologies to assure a smooth and well executed transition. If Infineon does not hear from your side by the due date, we will assume your full acceptance to this proposed change and its implementation. Your attention and response to this matter is greatly appreciated. Infineon Technologies AG Postal Address Headquarters: Am Campeon 1-12, D-85579 Neubiberg, Phone +49 (0)89 234-0 Chairman of the Supervisory Board: Wolfgang Mayrhuber Management Board: Dr. Reinhard Ploss (CEO), Dominik Asam, Dr. Helmut Gassel, Jochen Hanebeck Registered Office: Neubiberg Commercial Register Amtsgericht Mnchen HRB 126492 2017-04-13 Page 1 of 3 Product / Process Change Notification N 2017-039-A Sales Name SP N OPN Package Products affected: 1200V IGBT4 Modules Please refer to attached affected product list 1 cip17039a Detailed Change Information: Introduction of additional wafer production site with Subject: - 12 inch (300mm) wafer diameter capability for IGBT Chips and - 8 inch (200mm) wafer diameter for Diode products. Capacity extension and increasing security of supply 1200V IGBT4, Reason: IGBT HighSpeed 3 and Diode For IGBT products 12 wafer manufacturing technology is meanwhile the established technology at IFX For Diodes the 8 wafer manufacturing technology is, State of the Art wafer manufacturing technology at Infineon. Therefore, the above mentioned products will be shifted from 6 inch wafer diameter to 8 inch wafer diameter. Old New Description: IGBT IGBT 8 inch: 8 inch: - Front end Villach/ Austria - Front end Villach, Austria - Front end Kulim/ Malaysia - Front end Kulim/ Malaysia 12 inch: - Front end Dresden/ Germany Target production site front end Dresden/ Germany 12 inch Diode Diode 6 inch: 6 inch - Front end Villach/ Austria - Front end Villach/ Austria 8 inch: - Front end Villach/ Austria Target production site front end Villach/ Austria 8 inch Individual module material number. Product Identification: See attached list of affected products 1 cip17039a 2017-04-13 Page 2 of 3