FP75R12KT4P B11 EconoPIM3 Modul mit schnellem Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode und NTC / bereits aufgetragenem Thermal Interface Material EconoPIM3 module with fast Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC / pre-applied Thermal Interface Material VCES = 1200V I = 75A / I = 150A C nom CRM Typische Anwendungen Typical Applications Hilfsumrichter Auxiliary inverters Motorantriebe Motor drives Servoumrichter Servo drives Elektrische Eigenschaften Electrical Features Niedrige Schaltverluste Low switching losses Niedriges V Low V CEsat CEsat T = 150C T = 150C vj op vj op V mit positivem Temperaturkoeffizienten V with positive temperature coefficient CEsat CEsat Mechanische Eigenschaften Mechanical Features Hohe Last- und thermische Wechselfestigkeit High power and thermal cycling capability Integrierter NTC Temperatur Sensor Integrated NTC temperature sensor Kupferbodenplatte Copper base plate PressFIT Verbindungstechnik PressFIT contact technology Standardgehuse Standard housing Thermisches Interface Material bereits Pre-applied Thermal Interface Material aufgetragen Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 Datasheet Please read the Important Notice and Warnings at the end of this document V 3.0 www.infineon.com 2017-04-11FP75R12KT4P B11 IGBT,Wechselrichter / IGBT,Inverter Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25C V 1200 V vj CES Collector-emitter voltage Kollektor-Dauergleichstrom TH = 75C, Tvj max = 175C IC nom 75 A Continuous DC collector current Periodischer Kollektor-Spitzenstrom t = 1 ms I 150 A P CRM Repetitive peak collector current Gate-Emitter-Spitzenspannung VGES +/-20 V Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung IC = 75 A, VGE = 15 V Tvj = 25C 1,85 2,15 V Collector-emitter saturation voltage I = 75 A, V = 15 V T = 125C V 2,15 V C GE vj CE sat IC = 75 A, VGE = 15 V Tvj = 150C 2,25 V Gate-Schwellenspannung IC = 2,40 mA, VCE = VGE, Tvj = 25C VGEth 5,20 5,80 6,40 V Gate threshold voltage Gateladung V = -15 V ... +15 V Q 0,57 C GE G Gate charge Interner Gatewiderstand Tvj = 25C RGint 10 Internal gate resistor Eingangskapazitt f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 4,30 nF vj CE GE ies Input capacitance Rckwirkungskapazitt f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 0,16 nF Reverse transfer capacitance Kollektor-Emitter-Reststrom V = 1200 V, V = 0 V, T = 25C I 1,0 mA CE GE vj CES Collector-emitter cut-off current Gate-Emitter-Reststrom VCE = 0 V, VGE = 20 V, Tvj = 25C IGES 100 nA Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last IC = 75 A, VCE = 600 V Tvj = 25C 0,16 s t d on Turn-on delay time, inductive load V = 15 V T = 125C 0,17 s GE vj R = 1,1 T = 150C 0,17 s Gon vj Anstiegszeit, induktive Last IC = 75 A, VCE = 600 V Tvj = 25C 0,03 s t r Rise time, inductive load V = 15 V T = 125C 0,04 s GE vj R = 1,1 T = 150C 0,04 s Gon vj Abschaltverzgerungszeit, induktive Last I = 75 A, V = 600 V T = 25C 0,34 s C CE vj t d off Turn-off delay time, inductive load V = 15 V T = 125C 0,43 s GE vj R = 1,1 T = 150C 0,45 s Goff vj Fallzeit, induktive Last I = 75 A, V = 600 V T = 25C 0,08 s C CE vj t f Fall time, inductive load V = 15 V T = 125C 0,15 s GE vj R = 1,1 T = 150C 0,17 s Goff vj Einschaltverlustenergie pro Puls I = 75 A, V = 600 V, L = 40 nH T = 25C 3,10 mJ C CE S vj Turn-on energy loss per pulse V = 15 V, di/dt = 2500 A/s (T = 150C) T = 125C E 6,60 mJ GE vj vj on R = 1,1 T = 150C 7,65 mJ Gon vj Abschaltverlustenergie pro Puls I = 75 A, V = 600 V, L = 40 nH T = 25C 4,20 mJ C CE S vj Turn-off energy loss per pulse V = 15 V, du/dt = 3600 V/s (T = 150C)T = 125C E 6,40 mJ GE vj vj off R = 1,1 T = 150C 7,20 mJ Goff vj Kurzschluverhalten V 15 V, V = 800 V GE CC I SC SC data V = V -L di/dt t 10 s, T = 150C 270 A CEmax CES sCE P vj Wrmewiderstand, Chip bis Khlkrper pro IGBT / per IGBT RthJH 0,481 K/W Thermal resistance, junction to heatsink valid with IFX pre-applied thermal interface material Temperatur im Schaltbetrieb T -40 150 C vj op Temperature under switching conditions Datasheet 2 V 3.0 2017-04-11